JPS5483373A - Heating-up method of semiconductor substrate - Google Patents

Heating-up method of semiconductor substrate

Info

Publication number
JPS5483373A
JPS5483373A JP15058177A JP15058177A JPS5483373A JP S5483373 A JPS5483373 A JP S5483373A JP 15058177 A JP15058177 A JP 15058177A JP 15058177 A JP15058177 A JP 15058177A JP S5483373 A JPS5483373 A JP S5483373A
Authority
JP
Japan
Prior art keywords
substrate
power
heating
temperature
conducted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15058177A
Other languages
Japanese (ja)
Inventor
Teruo Sakurai
Sukehisa Hiyamizu
Shigeru Okamura
Hiroshi Nishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15058177A priority Critical patent/JPS5483373A/en
Publication of JPS5483373A publication Critical patent/JPS5483373A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To make a part of the substrate into a resistance beforehand and then conduct power, thereby raising the temperature of the substrate in the purified atmosphere which is kept intact.
CONSTITUTION: On Cr-added semi-insulated GaAs substrate 11, Zn diffused layer 13 is formed by means of SiO2 mask 12. This substrate 10 is put into vacuum chamber 20 and supported by metallic electrodes 30 and 30'. Then the substrate is conducted and heated up. In this process, power is conducted only to the substrate itself and thus thermal capacity is small. Consequently, heating-up to more than 500°C is possible by means of small power and the response between impressed power and temperature is satisfactory. In addition, no contamination of the substrate will occur, because the temperature rise at portions other than the substrate is low.
COPYRIGHT: (C)1979,JPO&Japio
JP15058177A 1977-12-16 1977-12-16 Heating-up method of semiconductor substrate Pending JPS5483373A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15058177A JPS5483373A (en) 1977-12-16 1977-12-16 Heating-up method of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15058177A JPS5483373A (en) 1977-12-16 1977-12-16 Heating-up method of semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS5483373A true JPS5483373A (en) 1979-07-03

Family

ID=15500003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15058177A Pending JPS5483373A (en) 1977-12-16 1977-12-16 Heating-up method of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5483373A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5883145U (en) * 1981-12-01 1983-06-06 日本電子株式会社 Sample heating mechanism

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5883145U (en) * 1981-12-01 1983-06-06 日本電子株式会社 Sample heating mechanism

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