JPS5483373A - Heating-up method of semiconductor substrate - Google Patents
Heating-up method of semiconductor substrateInfo
- Publication number
- JPS5483373A JPS5483373A JP15058177A JP15058177A JPS5483373A JP S5483373 A JPS5483373 A JP S5483373A JP 15058177 A JP15058177 A JP 15058177A JP 15058177 A JP15058177 A JP 15058177A JP S5483373 A JPS5483373 A JP S5483373A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- power
- heating
- temperature
- conducted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To make a part of the substrate into a resistance beforehand and then conduct power, thereby raising the temperature of the substrate in the purified atmosphere which is kept intact.
CONSTITUTION: On Cr-added semi-insulated GaAs substrate 11, Zn diffused layer 13 is formed by means of SiO2 mask 12. This substrate 10 is put into vacuum chamber 20 and supported by metallic electrodes 30 and 30'. Then the substrate is conducted and heated up. In this process, power is conducted only to the substrate itself and thus thermal capacity is small. Consequently, heating-up to more than 500°C is possible by means of small power and the response between impressed power and temperature is satisfactory. In addition, no contamination of the substrate will occur, because the temperature rise at portions other than the substrate is low.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15058177A JPS5483373A (en) | 1977-12-16 | 1977-12-16 | Heating-up method of semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15058177A JPS5483373A (en) | 1977-12-16 | 1977-12-16 | Heating-up method of semiconductor substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5483373A true JPS5483373A (en) | 1979-07-03 |
Family
ID=15500003
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15058177A Pending JPS5483373A (en) | 1977-12-16 | 1977-12-16 | Heating-up method of semiconductor substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5483373A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5883145U (en) * | 1981-12-01 | 1983-06-06 | 日本電子株式会社 | Sample heating mechanism |
-
1977
- 1977-12-16 JP JP15058177A patent/JPS5483373A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5883145U (en) * | 1981-12-01 | 1983-06-06 | 日本電子株式会社 | Sample heating mechanism |
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