JPS5759322A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5759322A JPS5759322A JP13454880A JP13454880A JPS5759322A JP S5759322 A JPS5759322 A JP S5759322A JP 13454880 A JP13454880 A JP 13454880A JP 13454880 A JP13454880 A JP 13454880A JP S5759322 A JPS5759322 A JP S5759322A
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline
- layer
- substrate
- semiconductor device
- roughening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 238000007788 roughening Methods 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To prevent the roughening, etc., of the surface of a polycrystalline layer of a semiconductor device by a method wherein ions are implanted in a substrate through the polycrystalline semiconductor layer adhered on the semiconductor substrate, and the surface of the polycrystalline layer is oxidized before heat treatment is to be performed. CONSTITUTION:The polycrystalline Si layer 4 is adhered on the Si substrate 1 having a diffusion region 3 interposing an SiO2 film 2 being performed with patterning between them, and after As ions are implanted in the substrate through the polycrystalline Si layer 4, the surface of the polycrystalline Si layer is oxidized to form an oxide film 6, and then it is heat treated at a high temperature in a nonoxidizing atmosphere to form an emitter region 7. Accordingly the roughening of the surface of the polycrystalline Si layer, etc., to be caused by heat treatment can be avoided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13454880A JPS5759322A (en) | 1980-09-27 | 1980-09-27 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13454880A JPS5759322A (en) | 1980-09-27 | 1980-09-27 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5759322A true JPS5759322A (en) | 1982-04-09 |
| JPS6225251B2 JPS6225251B2 (en) | 1987-06-02 |
Family
ID=15130885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13454880A Granted JPS5759322A (en) | 1980-09-27 | 1980-09-27 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5759322A (en) |
-
1980
- 1980-09-27 JP JP13454880A patent/JPS5759322A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6225251B2 (en) | 1987-06-02 |
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