JPS55111125A - Method for manufacture of semiconductor device - Google Patents
Method for manufacture of semiconductor deviceInfo
- Publication number
- JPS55111125A JPS55111125A JP1836379A JP1836379A JPS55111125A JP S55111125 A JPS55111125 A JP S55111125A JP 1836379 A JP1836379 A JP 1836379A JP 1836379 A JP1836379 A JP 1836379A JP S55111125 A JPS55111125 A JP S55111125A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- furnace
- atmosphere
- rate
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To improve characteristics and reliability by implanting impurity ions into the surface of a semiconductor substrate, then, performing high-temperature diffusion in a non-oxidizing atmosphere and oxidation at a slightly lower temperature in an oxidizing atmosphere continuously in the same furnace, thereby eliminating contamination.
CONSTITUTION: The following furnace-heating and furnace-cooling diffusions are performed in accordance with the temperature process shown in the Figure, after the formation of, for example, a B ion impanted layer 3 on an n--type Si substrate 1. A thin SiO2 layer 5 is formed on the base surface before the diffusion treatment by treating the device at for example, 780°C for 30 minutes in the wet O2 atmosphere. Then, p-type base layer 4 is formed by increasing the furnace temperature to 1,200°C or more at the rate of 5°C/min, by holding the device in a dry high-temperature N2 atmosphere of 1,200W1,250°C for specified time, and by performing the diffusion. Then, an oxide film 6 with the thickness of 4,000Å is formed on the base surface by decreasing the temperature to 1,050°C at the rate of, for example, 3W 4°C/min, and by holding the device in the wet O2 atmosphere at 1,000°C or less for specified time. Thereafter, the furnace temperature is decreased to the room temperature at the rate of 3W4°C/min.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1836379A JPS55111125A (en) | 1979-02-21 | 1979-02-21 | Method for manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1836379A JPS55111125A (en) | 1979-02-21 | 1979-02-21 | Method for manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55111125A true JPS55111125A (en) | 1980-08-27 |
Family
ID=11969605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1836379A Pending JPS55111125A (en) | 1979-02-21 | 1979-02-21 | Method for manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55111125A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58103123A (en) * | 1981-12-16 | 1983-06-20 | Nec Corp | Manufacture of compound semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52109369A (en) * | 1976-03-10 | 1977-09-13 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS53102676A (en) * | 1977-02-21 | 1978-09-07 | Sony Corp | Preventing method for lamination fault |
-
1979
- 1979-02-21 JP JP1836379A patent/JPS55111125A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52109369A (en) * | 1976-03-10 | 1977-09-13 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS53102676A (en) * | 1977-02-21 | 1978-09-07 | Sony Corp | Preventing method for lamination fault |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58103123A (en) * | 1981-12-16 | 1983-06-20 | Nec Corp | Manufacture of compound semiconductor device |
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