JPS53102676A - Preventing method for lamination fault - Google Patents

Preventing method for lamination fault

Info

Publication number
JPS53102676A
JPS53102676A JP1791477A JP1791477A JPS53102676A JP S53102676 A JPS53102676 A JP S53102676A JP 1791477 A JP1791477 A JP 1791477A JP 1791477 A JP1791477 A JP 1791477A JP S53102676 A JPS53102676 A JP S53102676A
Authority
JP
Japan
Prior art keywords
preventing method
gas
lamination
fault
lamination fault
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1791477A
Other languages
Japanese (ja)
Other versions
JPS618574B2 (en
Inventor
Chuichi Niwano
Toshihiko Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP1791477A priority Critical patent/JPS53102676A/en
Publication of JPS53102676A publication Critical patent/JPS53102676A/en
Publication of JPS618574B2 publication Critical patent/JPS618574B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To prevent the defective lamination layers from being taken place, by performing annealing process at more than 900;4C, while flowing non-oxidation gas more than a given rate of flow depending on the types of gas, to the silicon wafer prior to the first oxidation process.
COPYRIGHT: (C)1978,JPO&Japio
JP1791477A 1977-02-21 1977-02-21 Preventing method for lamination fault Granted JPS53102676A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1791477A JPS53102676A (en) 1977-02-21 1977-02-21 Preventing method for lamination fault

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1791477A JPS53102676A (en) 1977-02-21 1977-02-21 Preventing method for lamination fault

Publications (2)

Publication Number Publication Date
JPS53102676A true JPS53102676A (en) 1978-09-07
JPS618574B2 JPS618574B2 (en) 1986-03-15

Family

ID=11957012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1791477A Granted JPS53102676A (en) 1977-02-21 1977-02-21 Preventing method for lamination fault

Country Status (1)

Country Link
JP (1) JPS53102676A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111125A (en) * 1979-02-21 1980-08-27 Hitachi Ltd Method for manufacture of semiconductor device
JPS5885534A (en) * 1981-11-18 1983-05-21 Komatsu Denshi Kinzoku Kk Manufacture of semiconductor silicon
JPS58201331A (en) * 1982-05-12 1983-11-24 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of producing silicon semiconductor element
US6146135A (en) * 1991-08-19 2000-11-14 Tadahiro Ohmi Oxide film forming method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111125A (en) * 1979-02-21 1980-08-27 Hitachi Ltd Method for manufacture of semiconductor device
JPS5885534A (en) * 1981-11-18 1983-05-21 Komatsu Denshi Kinzoku Kk Manufacture of semiconductor silicon
JPS58201331A (en) * 1982-05-12 1983-11-24 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of producing silicon semiconductor element
US6146135A (en) * 1991-08-19 2000-11-14 Tadahiro Ohmi Oxide film forming method
US6949478B2 (en) 1991-08-19 2005-09-27 Tadahiro Ohmi Oxide film forming method

Also Published As

Publication number Publication date
JPS618574B2 (en) 1986-03-15

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