JPS5422157A - Formation method of selective impurity diffusion region into iii-v group compound semiconductor - Google Patents
Formation method of selective impurity diffusion region into iii-v group compound semiconductorInfo
- Publication number
- JPS5422157A JPS5422157A JP8715177A JP8715177A JPS5422157A JP S5422157 A JPS5422157 A JP S5422157A JP 8715177 A JP8715177 A JP 8715177A JP 8715177 A JP8715177 A JP 8715177A JP S5422157 A JPS5422157 A JP S5422157A
- Authority
- JP
- Japan
- Prior art keywords
- iii
- compound semiconductor
- group compound
- diffusion region
- formation method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE: To secure a selective diffusion of the impurity onto the III-V group compound semiconductor via the Al mask.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52087151A JPS5918855B2 (en) | 1977-07-20 | 1977-07-20 | 3-Method for forming selective impurity diffusion regions in V group compound semiconductors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52087151A JPS5918855B2 (en) | 1977-07-20 | 1977-07-20 | 3-Method for forming selective impurity diffusion regions in V group compound semiconductors |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5422157A true JPS5422157A (en) | 1979-02-19 |
JPS5918855B2 JPS5918855B2 (en) | 1984-05-01 |
Family
ID=13906969
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52087151A Expired JPS5918855B2 (en) | 1977-07-20 | 1977-07-20 | 3-Method for forming selective impurity diffusion regions in V group compound semiconductors |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5918855B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4868633A (en) * | 1986-10-22 | 1989-09-19 | Texas Instruments Incorporated | Selective epitaxy devices and method |
-
1977
- 1977-07-20 JP JP52087151A patent/JPS5918855B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4868633A (en) * | 1986-10-22 | 1989-09-19 | Texas Instruments Incorporated | Selective epitaxy devices and method |
Also Published As
Publication number | Publication date |
---|---|
JPS5918855B2 (en) | 1984-05-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5271446A (en) | Novel method for preparing 3',4'-dideoxykanamycin b | |
JPS53124087A (en) | Manufacture of semiconductor device | |
JPS5422157A (en) | Formation method of selective impurity diffusion region into iii-v group compound semiconductor | |
JPS5425169A (en) | Matching method for photo mask against semiconductor wafer | |
JPS5211525A (en) | Method of manufacturing headrests | |
JPS5245273A (en) | Method for production of semiconductor device | |
JPS53142877A (en) | Manufacture for compound semiconductor device | |
JPS51146192A (en) | Diode device fabrication method | |
JPS51118369A (en) | Manufacturing process for simiconduator unit | |
JPS5410682A (en) | Production of semiconductor elements | |
JPS52153923A (en) | Preparation of 2-amino-4-alkoxyphenols | |
JPS51146194A (en) | Diode device fabrication method | |
JPS525700A (en) | The process for production of silicon nitride | |
JPS5377170A (en) | Selective growth method of compound semiconductor | |
JPS5211761A (en) | Method of cutting semiconductor wafers | |
JPS5276872A (en) | Cutting method of semiconductor wafer | |
JPS51113578A (en) | Semi-conductor elements | |
JPS5378780A (en) | Preparation for semiconductor device | |
JPS5368070A (en) | Etching method | |
JPS5231409A (en) | Method of blocking chain automatically | |
JPS5436186A (en) | Etching method of gaas system compound semiconductor crystal | |
JPS5366163A (en) | Selective growth method of semiconductor buried layer | |
JPS51123559A (en) | Production method of aerial phase growth wafer | |
JPS527673A (en) | Method of forming pn junction | |
JPS547879A (en) | Manufacture for semiconductor device |