JPS5754333A - Semiconductor device and preparation thereof - Google Patents

Semiconductor device and preparation thereof

Info

Publication number
JPS5754333A
JPS5754333A JP12922280A JP12922280A JPS5754333A JP S5754333 A JPS5754333 A JP S5754333A JP 12922280 A JP12922280 A JP 12922280A JP 12922280 A JP12922280 A JP 12922280A JP S5754333 A JPS5754333 A JP S5754333A
Authority
JP
Japan
Prior art keywords
region
concentration
oxygen
constitution
occurrence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12922280A
Other languages
Japanese (ja)
Inventor
Toshinobu Yanase
Masanobu Ogino
Masaharu Watanabe
Hiroshi Kayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12922280A priority Critical patent/JPS5754333A/en
Publication of JPS5754333A publication Critical patent/JPS5754333A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

Abstract

PURPOSE:To prevent the occurrence of stress by a method wherein the second region whose O2 concentration is more than a prescribed amount and which has numerous minute defects is provided in contact with the first region which forms an active region and whose interstitial O2 concentration is less than a prescribed amount. CONSTITUTION:Impurities are introduced into an Si substrate having the interstitial O2 concentration of 1.5X10<18>/cm<3> or more by using an oxidized film as a mask. Next, after the oxidized film is removed, an embedded layer 17 is formed by applying heat treatment for thirty hours at 1,190 deg.C, for instance, and also a region 18 having low density of oxygen is formed by releasing oxygen from the surface. Then, while a thermooxidized film 19 and an Si3N4 layer 20 are provided, oxygen is educed on the substrate and thus a region 21 having numerous minute defects which have a gettering effect is formed. By this constitution, the occurrence of stress is prevented and element characteristics such as reduction of a leak current are improved.
JP12922280A 1980-09-19 1980-09-19 Semiconductor device and preparation thereof Pending JPS5754333A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12922280A JPS5754333A (en) 1980-09-19 1980-09-19 Semiconductor device and preparation thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12922280A JPS5754333A (en) 1980-09-19 1980-09-19 Semiconductor device and preparation thereof

Publications (1)

Publication Number Publication Date
JPS5754333A true JPS5754333A (en) 1982-03-31

Family

ID=15004158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12922280A Pending JPS5754333A (en) 1980-09-19 1980-09-19 Semiconductor device and preparation thereof

Country Status (1)

Country Link
JP (1) JPS5754333A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59142132U (en) * 1983-03-14 1984-09-22 三菱自動車工業株式会社 Drive wheel number switching device for vehicles
JPS601027A (en) * 1983-06-20 1985-01-07 Aisin Seiki Co Ltd Transmission with transfer
US4678055A (en) * 1985-10-16 1987-07-07 Toyota Jidosha Kabushiki Kaisha Four-wheel vehicle drive system
US4723459A (en) * 1985-05-11 1988-02-09 Toyota Jidosha Kabushiki Kaisha Power transfer device for automotive vehicles

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5717125A (en) * 1980-07-04 1982-01-28 Oki Electric Ind Co Ltd Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5717125A (en) * 1980-07-04 1982-01-28 Oki Electric Ind Co Ltd Manufacture of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59142132U (en) * 1983-03-14 1984-09-22 三菱自動車工業株式会社 Drive wheel number switching device for vehicles
JPS601027A (en) * 1983-06-20 1985-01-07 Aisin Seiki Co Ltd Transmission with transfer
JPH0517050B2 (en) * 1983-06-20 1993-03-08 Aisin Seiki
US4723459A (en) * 1985-05-11 1988-02-09 Toyota Jidosha Kabushiki Kaisha Power transfer device for automotive vehicles
US4678055A (en) * 1985-10-16 1987-07-07 Toyota Jidosha Kabushiki Kaisha Four-wheel vehicle drive system

Similar Documents

Publication Publication Date Title
JPS5754333A (en) Semiconductor device and preparation thereof
JPS57197827A (en) Semiconductor substrate
JPS5737830A (en) Manufacture of semiconductor device
JPS57194525A (en) Manufacture of semiconductor device
JPS5763841A (en) Preparation of semiconductor device
JPS56105652A (en) Manufacture of semiconductor device
JPS5656682A (en) Manufacture of semiconductor device
JPS5458381A (en) Manufacture for semiconductor device
JPS5633841A (en) Manufacture of semiconductor device
JPS5559778A (en) Method of fabricating semiconductor device
JPS5512726A (en) Process for manufacturing semiconductor substrate
JPS577121A (en) Manufacture of semiconductor device
JPS5633840A (en) Manufacture of semiconductor device
JPS5693315A (en) Manufacture of semiconductor device
JPS647625A (en) Treating method for semiconductor substrate
JPS5513951A (en) Manufacturing method of semiconductor device
JPS55111125A (en) Method for manufacture of semiconductor device
JPS5272162A (en) Production of semiconductor device
JPS57162467A (en) Manufacture of semiconductor device
JPS5737838A (en) Manufacture of semiconductor device
JPS5513930A (en) Manufacturing method for semiconductor device
JPS57204166A (en) Manufacture of semiconductor device
JPS57107050A (en) Manufacture of semiconductor device
JPS5539634A (en) Manufacture of semiconductor
JPS57194547A (en) Manufacture of semiconductor device