JPS5717125A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5717125A
JPS5717125A JP9055280A JP9055280A JPS5717125A JP S5717125 A JPS5717125 A JP S5717125A JP 9055280 A JP9055280 A JP 9055280A JP 9055280 A JP9055280 A JP 9055280A JP S5717125 A JPS5717125 A JP S5717125A
Authority
JP
Japan
Prior art keywords
crystal defects
substrate
crystal
grow
defects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9055280A
Other languages
Japanese (ja)
Inventor
Masayoshi Sasaki
Shintaro Ushio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP9055280A priority Critical patent/JPS5717125A/en
Publication of JPS5717125A publication Critical patent/JPS5717125A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)

Abstract

PURPOSE:To reduce crystal defects in a semiconductor device to be generated in a growth layer making defects to be absorbed in a substrate by a method wherin the epitaxial layer is made to grow by heat treatment on a semiconductor substrate wherein crystal defect generating cores or crystal defects are made to grow. CONSTITUTION:The Si substrate 11 having concentration 0.8X10<18>/cm<2> or more of O2 is heat treated at temperature 600-900 deg.C for 1-20hr to form an oxide deposit, crystal defects are made to be generated making the deposit as the cores, then the epitaxial layer 12 is made to grow, and crystal defects 15 in the growth layer are made to be absorbed in the Si substrate 11 during the process of growth and the process of oxidation and diffusion. Accordingly because crystal defects in the epitaxial growth layer are reduced broadly, the crystal having high quality can be obtained.
JP9055280A 1980-07-04 1980-07-04 Manufacture of semiconductor device Pending JPS5717125A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9055280A JPS5717125A (en) 1980-07-04 1980-07-04 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9055280A JPS5717125A (en) 1980-07-04 1980-07-04 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5717125A true JPS5717125A (en) 1982-01-28

Family

ID=14001565

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9055280A Pending JPS5717125A (en) 1980-07-04 1980-07-04 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5717125A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5754333A (en) * 1980-09-19 1982-03-31 Toshiba Corp Semiconductor device and preparation thereof
JPS57136332A (en) * 1981-02-17 1982-08-23 Matsushita Electric Ind Co Ltd Semiconductor device
JPS57167634A (en) * 1981-03-11 1982-10-15 Fujitsu Ltd Semiconductor device
JPS60198735A (en) * 1984-03-22 1985-10-08 Matsushita Electronics Corp Manufacture of semiconductor device
JPS6265200A (en) * 1985-09-17 1987-03-24 東邦機工株式会社 Automatically forcible legal speed control system for automobile or the like
JPS63104322A (en) * 1986-10-21 1988-05-09 Toshiba Corp Epitaxial wafer
JPH01265525A (en) * 1988-04-15 1989-10-23 Fujitsu Ltd Manufacture of semiconductor substrate
JPH0237771A (en) * 1988-07-28 1990-02-07 Fujitsu Ltd Soi substrate
WO1998025299A1 (en) * 1996-12-03 1998-06-11 Sumitomo Metal Industries., Ltd. Method for manufacturing semiconductor silicon epitaxial wafer and semiconductor device

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5754333A (en) * 1980-09-19 1982-03-31 Toshiba Corp Semiconductor device and preparation thereof
JPS57136332A (en) * 1981-02-17 1982-08-23 Matsushita Electric Ind Co Ltd Semiconductor device
JPS57167634A (en) * 1981-03-11 1982-10-15 Fujitsu Ltd Semiconductor device
JPS6315742B2 (en) * 1981-03-11 1988-04-06 Fujitsu Ltd
JPS60198735A (en) * 1984-03-22 1985-10-08 Matsushita Electronics Corp Manufacture of semiconductor device
JPS6265200A (en) * 1985-09-17 1987-03-24 東邦機工株式会社 Automatically forcible legal speed control system for automobile or the like
JPS63104322A (en) * 1986-10-21 1988-05-09 Toshiba Corp Epitaxial wafer
JPH01265525A (en) * 1988-04-15 1989-10-23 Fujitsu Ltd Manufacture of semiconductor substrate
JPH0237771A (en) * 1988-07-28 1990-02-07 Fujitsu Ltd Soi substrate
JPH0573349B2 (en) * 1988-07-28 1993-10-14 Fujitsu Ltd
WO1998025299A1 (en) * 1996-12-03 1998-06-11 Sumitomo Metal Industries., Ltd. Method for manufacturing semiconductor silicon epitaxial wafer and semiconductor device
EP0954018A1 (en) * 1996-12-03 1999-11-03 Sumitomo Metal Industries Limited Method for manufacturing semiconductor silicon epitaxial wafer and semiconductor device
US6277193B1 (en) 1996-12-03 2001-08-21 Sumitomo Metal Industries, Ltd. Method for manufacturing semiconductor silicon epitaxial wafer and semiconductor device
EP0954018A4 (en) * 1996-12-03 2006-07-19 Sumitomo Mitsubishi Silicon Method for manufacturing semiconductor silicon epitaxial wafer and semiconductor device

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