JPS55143039A - Treating method of semiconductor wafer with heat - Google Patents

Treating method of semiconductor wafer with heat

Info

Publication number
JPS55143039A
JPS55143039A JP5029979A JP5029979A JPS55143039A JP S55143039 A JPS55143039 A JP S55143039A JP 5029979 A JP5029979 A JP 5029979A JP 5029979 A JP5029979 A JP 5029979A JP S55143039 A JPS55143039 A JP S55143039A
Authority
JP
Japan
Prior art keywords
layer
region
produced
wafer
sio2 film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5029979A
Other languages
Japanese (ja)
Inventor
Takaaki Aoshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5029979A priority Critical patent/JPS55143039A/en
Publication of JPS55143039A publication Critical patent/JPS55143039A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To perform the gettering of point defects out of a device making region in a substrate and manufacture a device of good properties, by coating a polycrystalline semiconductor layer on the surface of a single-crystal semiconductor wafer whereon the device is to be manufactured and by treating the semiconductor layer with heat under an oxidizing atmosphere to change the layer into an oxide. CONSTITUTION:To manufacture and MOS IC or the like, the surface of an Si wafer 1 is cleaned up and a polycrystalline Si layer 2 is epitaxially grown on the surface the first. The thickness of the layer 2 is prescribed to be not more then about 45% of the thickness of an SiO2 film 3 to be produced on the layer 2. The wafer 1 is heated at 1,000 deg.C or more under an oxidizing atmosphere so that the SiO2 film 3 is produced on the layer 2 and this layer is all changed into an SiO2 film. As a result, point defects due to impurity atoms of supersaturated oxygen, carbon or the like and excessive atoms in an Si lattice are pushed out of a device making region. Therefore, this region 1a has no crystal lattice defects. After that, a source and a drain regions 4, 5 are produced in the region 1a by a conventional diffusion method.
JP5029979A 1979-04-25 1979-04-25 Treating method of semiconductor wafer with heat Pending JPS55143039A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5029979A JPS55143039A (en) 1979-04-25 1979-04-25 Treating method of semiconductor wafer with heat

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5029979A JPS55143039A (en) 1979-04-25 1979-04-25 Treating method of semiconductor wafer with heat

Publications (1)

Publication Number Publication Date
JPS55143039A true JPS55143039A (en) 1980-11-08

Family

ID=12855010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5029979A Pending JPS55143039A (en) 1979-04-25 1979-04-25 Treating method of semiconductor wafer with heat

Country Status (1)

Country Link
JP (1) JPS55143039A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014138073A (en) * 2013-01-16 2014-07-28 Tokyo Electron Ltd Method for forming silicon oxide film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5019363A (en) * 1973-06-21 1975-02-28

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5019363A (en) * 1973-06-21 1975-02-28

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014138073A (en) * 2013-01-16 2014-07-28 Tokyo Electron Ltd Method for forming silicon oxide film

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