JPS5667922A - Preparation method of semiconductor system - Google Patents

Preparation method of semiconductor system

Info

Publication number
JPS5667922A
JPS5667922A JP14418379A JP14418379A JPS5667922A JP S5667922 A JPS5667922 A JP S5667922A JP 14418379 A JP14418379 A JP 14418379A JP 14418379 A JP14418379 A JP 14418379A JP S5667922 A JPS5667922 A JP S5667922A
Authority
JP
Japan
Prior art keywords
heat processing
oxygen atmosphere
micro defects
epitaxial
thereafter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14418379A
Other languages
Japanese (ja)
Other versions
JPS6258138B2 (en
Inventor
Hideki Tsuya
Yukinobu Tanno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP14418379A priority Critical patent/JPS5667922A/en
Publication of JPS5667922A publication Critical patent/JPS5667922A/en
Publication of JPS6258138B2 publication Critical patent/JPS6258138B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

PURPOSE:To reduce micro detects on the surface layer by a method wherein a semiconductor substrate is placed in a heat processing in a dry oxygen atmosphere and thereafter, it is placed in a heatprocessing in a wet oxygen atmosphere and then, Si is made to grow in a epitaxial growth by means of a vapor reaction method. CONSTITUTION:An Si monocrystal substrate is previously placed in a heat processing in a dry oxygen atomosphere under the temprature of 650-1,000 deg.C for more than 16hr and thereafter, an oxide film is removed and next thereto, a heat processing is performed to it in a wet oxygen atmosphere under the temperature of 1,050-1,200 deg.C for two hours and then, Si is grown by means of a vapor epitaxial method. With this, micro defects due to precipitation and disolcation are generated in the inner part, and also micro defects in an epitaxial film can be reduced by a so called intrinsic gettering effect which absorbs micro defects or its nucleus through its strain area.
JP14418379A 1979-11-07 1979-11-07 Preparation method of semiconductor system Granted JPS5667922A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14418379A JPS5667922A (en) 1979-11-07 1979-11-07 Preparation method of semiconductor system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14418379A JPS5667922A (en) 1979-11-07 1979-11-07 Preparation method of semiconductor system

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP27874488A Division JPH02177321A (en) 1988-11-04 1988-11-04 Manufacture of semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS5667922A true JPS5667922A (en) 1981-06-08
JPS6258138B2 JPS6258138B2 (en) 1987-12-04

Family

ID=15356120

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14418379A Granted JPS5667922A (en) 1979-11-07 1979-11-07 Preparation method of semiconductor system

Country Status (1)

Country Link
JP (1) JPS5667922A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994809A (en) * 1982-11-22 1984-05-31 Fujitsu Ltd Production of semiconductor element
JPH01265525A (en) * 1988-04-15 1989-10-23 Fujitsu Ltd Manufacture of semiconductor substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994809A (en) * 1982-11-22 1984-05-31 Fujitsu Ltd Production of semiconductor element
JPH01265525A (en) * 1988-04-15 1989-10-23 Fujitsu Ltd Manufacture of semiconductor substrate

Also Published As

Publication number Publication date
JPS6258138B2 (en) 1987-12-04

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