JPS54138382A - Manufacture for semiconductor integrated circuit device - Google Patents
Manufacture for semiconductor integrated circuit deviceInfo
- Publication number
- JPS54138382A JPS54138382A JP4690978A JP4690978A JPS54138382A JP S54138382 A JPS54138382 A JP S54138382A JP 4690978 A JP4690978 A JP 4690978A JP 4690978 A JP4690978 A JP 4690978A JP S54138382 A JPS54138382 A JP S54138382A
- Authority
- JP
- Japan
- Prior art keywords
- film
- single crystal
- substrate
- gaas single
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To obtain the surface less in step difference, by constituting specified pattern with grown thermal oxide film on the entire surface of GaAs single crystal substrate, and forming polycrystal film on the oxide film or GaAs single crystal film on the substrate exposed with molecule ray crystal growing method.
CONSTITUTION: After cleaning the surface of the semi-insulation GaAs single crystal substrate 1 doping Cr by using sulfuric acid system water solution, the SiO2 film 2 is produced with heat treatment under oxygen atomosphere, it is remained only on the insulation separation region and others are removed. Further, Sn crystal is grown on the entire surface as N type impurity with molecule ray crystal growing method, and the GaAs single crystal film 3 is produced on the exposed part of the substrate 1 and the GaAs polycrystal film 4 is developed on the film 2 remained. Thus, the step difference at the boundary between the films 3 and 4 is only the thickness of the film 2, and it is possible to obtain the isolation separation film 4 of high resistance and the single crystal film 3 of low resistance with smaller surface unevenness.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4690978A JPS54138382A (en) | 1978-04-20 | 1978-04-20 | Manufacture for semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4690978A JPS54138382A (en) | 1978-04-20 | 1978-04-20 | Manufacture for semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54138382A true JPS54138382A (en) | 1979-10-26 |
Family
ID=12760475
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4690978A Pending JPS54138382A (en) | 1978-04-20 | 1978-04-20 | Manufacture for semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54138382A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01201924A (en) * | 1988-02-05 | 1989-08-14 | Matsushita Electric Ind Co Ltd | Method of element isolation |
US4948751A (en) * | 1987-05-20 | 1990-08-14 | Nec Corporation | Moelcular beam epitaxy for selective epitaxial growth of III - V compound semiconductor |
-
1978
- 1978-04-20 JP JP4690978A patent/JPS54138382A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4948751A (en) * | 1987-05-20 | 1990-08-14 | Nec Corporation | Moelcular beam epitaxy for selective epitaxial growth of III - V compound semiconductor |
JPH01201924A (en) * | 1988-02-05 | 1989-08-14 | Matsushita Electric Ind Co Ltd | Method of element isolation |
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