JPS54138382A - Manufacture for semiconductor integrated circuit device - Google Patents

Manufacture for semiconductor integrated circuit device

Info

Publication number
JPS54138382A
JPS54138382A JP4690978A JP4690978A JPS54138382A JP S54138382 A JPS54138382 A JP S54138382A JP 4690978 A JP4690978 A JP 4690978A JP 4690978 A JP4690978 A JP 4690978A JP S54138382 A JPS54138382 A JP S54138382A
Authority
JP
Japan
Prior art keywords
film
single crystal
substrate
gaas single
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4690978A
Other languages
Japanese (ja)
Inventor
Suketoshi Hiyamizu
Teruo Sakurai
Kazuo Nanbu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4690978A priority Critical patent/JPS54138382A/en
Publication of JPS54138382A publication Critical patent/JPS54138382A/en
Pending legal-status Critical Current

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  • Element Separation (AREA)

Abstract

PURPOSE: To obtain the surface less in step difference, by constituting specified pattern with grown thermal oxide film on the entire surface of GaAs single crystal substrate, and forming polycrystal film on the oxide film or GaAs single crystal film on the substrate exposed with molecule ray crystal growing method.
CONSTITUTION: After cleaning the surface of the semi-insulation GaAs single crystal substrate 1 doping Cr by using sulfuric acid system water solution, the SiO2 film 2 is produced with heat treatment under oxygen atomosphere, it is remained only on the insulation separation region and others are removed. Further, Sn crystal is grown on the entire surface as N type impurity with molecule ray crystal growing method, and the GaAs single crystal film 3 is produced on the exposed part of the substrate 1 and the GaAs polycrystal film 4 is developed on the film 2 remained. Thus, the step difference at the boundary between the films 3 and 4 is only the thickness of the film 2, and it is possible to obtain the isolation separation film 4 of high resistance and the single crystal film 3 of low resistance with smaller surface unevenness.
COPYRIGHT: (C)1979,JPO&Japio
JP4690978A 1978-04-20 1978-04-20 Manufacture for semiconductor integrated circuit device Pending JPS54138382A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4690978A JPS54138382A (en) 1978-04-20 1978-04-20 Manufacture for semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4690978A JPS54138382A (en) 1978-04-20 1978-04-20 Manufacture for semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS54138382A true JPS54138382A (en) 1979-10-26

Family

ID=12760475

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4690978A Pending JPS54138382A (en) 1978-04-20 1978-04-20 Manufacture for semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS54138382A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01201924A (en) * 1988-02-05 1989-08-14 Matsushita Electric Ind Co Ltd Method of element isolation
US4948751A (en) * 1987-05-20 1990-08-14 Nec Corporation Moelcular beam epitaxy for selective epitaxial growth of III - V compound semiconductor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4948751A (en) * 1987-05-20 1990-08-14 Nec Corporation Moelcular beam epitaxy for selective epitaxial growth of III - V compound semiconductor
JPH01201924A (en) * 1988-02-05 1989-08-14 Matsushita Electric Ind Co Ltd Method of element isolation

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