JPS5659694A - Manufacture of thin film - Google Patents

Manufacture of thin film

Info

Publication number
JPS5659694A
JPS5659694A JP13356679A JP13356679A JPS5659694A JP S5659694 A JPS5659694 A JP S5659694A JP 13356679 A JP13356679 A JP 13356679A JP 13356679 A JP13356679 A JP 13356679A JP S5659694 A JPS5659694 A JP S5659694A
Authority
JP
Japan
Prior art keywords
film
thin film
annealing
manufacture
irradiating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13356679A
Other languages
Japanese (ja)
Other versions
JPS6116758B2 (en
Inventor
Koichiro Ootori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI, Agency of Industrial Science and Technology filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP13356679A priority Critical patent/JPS5659694A/en
Publication of JPS5659694A publication Critical patent/JPS5659694A/en
Publication of JPS6116758B2 publication Critical patent/JPS6116758B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE: To manufacture a thin film with superior characteristics by irradiating a thin film on a substrate with energy beams to singlecrystallize it after covering the film surface with a protective film to prevent impurities from mixing into the film.
CONSTITUTION: Polycrystalline Si thin film 3 is formed on the surface of amorphous heat oxidized SiO2 film 2 on Si substrate 1 by a chemical vapor deposition method, and by irradiating film 3 with energy beams 4, transient radiation annealing is carried out to single-crystallize film 3. In this thin film manufacturing method the annealing is carried out after covering the surface of film 3 with protective film 5 of silicon nitride Si3N4 or the like which can be formed at a relatively low temp. and has a m.p. higher than that of film 3. In this case, film 5 is not melted to prevent impurities from mixing into film 5. Thus, thin film 3 with superior characteristics is manufactured without requiring an airtight annealing apparatus or gas substitution.
COPYRIGHT: (C)1981,JPO&Japio
JP13356679A 1979-10-18 1979-10-18 Manufacture of thin film Granted JPS5659694A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13356679A JPS5659694A (en) 1979-10-18 1979-10-18 Manufacture of thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13356679A JPS5659694A (en) 1979-10-18 1979-10-18 Manufacture of thin film

Publications (2)

Publication Number Publication Date
JPS5659694A true JPS5659694A (en) 1981-05-23
JPS6116758B2 JPS6116758B2 (en) 1986-05-01

Family

ID=15107792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13356679A Granted JPS5659694A (en) 1979-10-18 1979-10-18 Manufacture of thin film

Country Status (1)

Country Link
JP (1) JPS5659694A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57208124A (en) * 1981-06-18 1982-12-21 Fujitsu Ltd Manufacture of semiconductor device
JPS5812320A (en) * 1981-07-15 1983-01-24 Fujitsu Ltd Manufacture of semiconductor device
JPS5855395A (en) * 1981-09-30 1983-04-01 Toshiba Corp Method for growing single crystal film of silicon
JPS58112333A (en) * 1981-12-26 1983-07-04 Fujitsu Ltd Manufacture of semiconductor device
JPS5915874U (en) * 1982-07-23 1984-01-31 フシマン株式会社 Self-powered pilot operated regulating valve
JPS60200887A (en) * 1984-03-23 1985-10-11 Nippon Sheet Glass Co Ltd Manufacture of magnetic film
JPS61127118A (en) * 1984-11-26 1986-06-14 Sony Corp Method for forming semiconductor thin film
JPS6384013A (en) * 1986-09-27 1988-04-14 Agency Of Ind Science & Technol Manufacture of semiconductor crystal layer
US6638800B1 (en) 1992-11-06 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57208124A (en) * 1981-06-18 1982-12-21 Fujitsu Ltd Manufacture of semiconductor device
JPS5812320A (en) * 1981-07-15 1983-01-24 Fujitsu Ltd Manufacture of semiconductor device
JPS5855395A (en) * 1981-09-30 1983-04-01 Toshiba Corp Method for growing single crystal film of silicon
JPH0337732B2 (en) * 1981-12-26 1991-06-06 Fujitsu Ltd
JPS58112333A (en) * 1981-12-26 1983-07-04 Fujitsu Ltd Manufacture of semiconductor device
JPS5915874U (en) * 1982-07-23 1984-01-31 フシマン株式会社 Self-powered pilot operated regulating valve
JPS6017583Y2 (en) * 1982-07-23 1985-05-29 フシマン株式会社 Self-powered pilot operated regulating valve
JPS60200887A (en) * 1984-03-23 1985-10-11 Nippon Sheet Glass Co Ltd Manufacture of magnetic film
JPH0457637B2 (en) * 1984-03-23 1992-09-14 Nippon Sheet Glass Co Ltd
JPS61127118A (en) * 1984-11-26 1986-06-14 Sony Corp Method for forming semiconductor thin film
JPS6384013A (en) * 1986-09-27 1988-04-14 Agency Of Ind Science & Technol Manufacture of semiconductor crystal layer
JPH0525384B2 (en) * 1986-09-27 1993-04-12 Kogyo Gijutsuin
US6638800B1 (en) 1992-11-06 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
US7179726B2 (en) 1992-11-06 2007-02-20 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
US7799665B2 (en) 1992-11-06 2010-09-21 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process

Also Published As

Publication number Publication date
JPS6116758B2 (en) 1986-05-01

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