JPS5546533A - Method of producing insulating film of silicon oxide - Google Patents

Method of producing insulating film of silicon oxide

Info

Publication number
JPS5546533A
JPS5546533A JP11953578A JP11953578A JPS5546533A JP S5546533 A JPS5546533 A JP S5546533A JP 11953578 A JP11953578 A JP 11953578A JP 11953578 A JP11953578 A JP 11953578A JP S5546533 A JPS5546533 A JP S5546533A
Authority
JP
Japan
Prior art keywords
film
substrate
wiring layer
layer
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11953578A
Other languages
Japanese (ja)
Inventor
Takamaro Mizoguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP11953578A priority Critical patent/JPS5546533A/en
Publication of JPS5546533A publication Critical patent/JPS5546533A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To produce an insulating film which has no overhang construction and steep step construction, by preparing materials including silane and an oxygen source at a prescribed temperature of a substrate and performing chemical evaporation.
CONSTITUTION: A filed oxide film 12 is produced on a silicon substrate 11. An opening 12a is made through the film 12 by selective etching. Polycrystalline silicon or a high-melting-point metal or a silicide thereof is coated and patterned so that a first electrode wiring layer 13 is provided. An impurity is diffused through the opening 12a so that a diffused layer 15 is produced. The substrate 11 is maintained at a temperaure 0f 600°C or more and materials including silane and an oxygen source are processed so that an insulating silicon oxide film 14 is deposited over the layer 13 by chemical evaporation. As a result, the gradient of the film 14 on the step part between the film 14 and the substrate 11 and the step part between the film 14 and the wiring layer 13 is made easy. Thus, an aluminium wiring layer 16 provided on the film 14 is prevented from being ruptured at the step parts of the film 14 and being short-circuited to the wiring layer 13.
COPYRIGHT: (C)1980,JPO&Japio
JP11953578A 1978-09-28 1978-09-28 Method of producing insulating film of silicon oxide Pending JPS5546533A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11953578A JPS5546533A (en) 1978-09-28 1978-09-28 Method of producing insulating film of silicon oxide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11953578A JPS5546533A (en) 1978-09-28 1978-09-28 Method of producing insulating film of silicon oxide

Publications (1)

Publication Number Publication Date
JPS5546533A true JPS5546533A (en) 1980-04-01

Family

ID=14763681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11953578A Pending JPS5546533A (en) 1978-09-28 1978-09-28 Method of producing insulating film of silicon oxide

Country Status (1)

Country Link
JP (1) JPS5546533A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59147434A (en) * 1983-02-10 1984-08-23 Mitsui Toatsu Chem Inc Formation of silicon oxide film
JPS6386549A (en) * 1986-09-30 1988-04-16 Toshiba Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59147434A (en) * 1983-02-10 1984-08-23 Mitsui Toatsu Chem Inc Formation of silicon oxide film
JPS6386549A (en) * 1986-09-30 1988-04-16 Toshiba Corp Manufacture of semiconductor device

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