JPS5513995A - Method of producing a semiconductor device - Google Patents

Abstract

PURPOSE: To prevent the breakage of wiring of upper layer at the aperture in an intermediate insulating film by coating the major surface of a semiconductor substrate with an oxidatable film containing Si and forming a wiring circuit by effecting a selective anode-oxidation of the oxidatable film to convert the latter into an insulating film.

CONSTITUTION: A semiconductor substrate 1 is formed to have an impurity-dispersion element region 2 and an insulating film 3. The major surface of this substrate 1 is coated with, for example, an Al film 6 and an Si-containing oxidatable film such as an Si-containing Al film 7. The latter film then is coated with a photoresist film 8a. The films 5,6 are then treated by anode oxidation making use of the film 8a as the mask to turn the latter into an insulating film 9, thereby to form a wiring circuit. In consequence, when an inter-layer insulating film 10 is formed and an aperture 11 is formed in the subsequent step, the undesirable excessive corrosion of the surface of the film 10 attributable to the difference of corrosion speed between this film 10 and the Si-containing film is avoided to prevent cutting of the wiring on the upper layer.

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