JPS5527684A - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device

Info

Publication number
JPS5527684A
JPS5527684A JP10133078A JP10133078A JPS5527684A JP S5527684 A JPS5527684 A JP S5527684A JP 10133078 A JP10133078 A JP 10133078A JP 10133078 A JP10133078 A JP 10133078A JP S5527684 A JPS5527684 A JP S5527684A
Authority
JP
Japan
Prior art keywords
dicing line
film
wiring material
internal wiring
boundary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10133078A
Other languages
Japanese (ja)
Other versions
JPS5952542B2 (en
Inventor
Hiroaki Emoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP53101330A priority Critical patent/JPS5952542B2/en
Publication of JPS5527684A publication Critical patent/JPS5527684A/en
Publication of JPS5952542B2 publication Critical patent/JPS5952542B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To devide a wafer without special restrictions by forming a protective film in a plasma etching process at the boundary between an insulation film and a dicing line consisting of a thin film which is easily peeled off.
CONSTITUTION: A pattern is formed by covering an internal wiring material such as alminum over a dicing line 8 and an oxidized film 6. In this process, a protective film 12 is formed in such a way that a part of or the entire internal wiring material is left on the boundary between the dicing line 8 and the oxidized film 6, but the internal wiring material is not allowed to remain on the center section of the dicing line 8.
COPYRIGHT: (C)1980,JPO&Japio
JP53101330A 1978-08-19 1978-08-19 Manufacturing method of semiconductor device Expired JPS5952542B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53101330A JPS5952542B2 (en) 1978-08-19 1978-08-19 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53101330A JPS5952542B2 (en) 1978-08-19 1978-08-19 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5527684A true JPS5527684A (en) 1980-02-27
JPS5952542B2 JPS5952542B2 (en) 1984-12-20

Family

ID=14297811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53101330A Expired JPS5952542B2 (en) 1978-08-19 1978-08-19 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5952542B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5300461A (en) * 1993-01-25 1994-04-05 Intel Corporation Process for fabricating sealed semiconductor chip using silicon nitride passivation film
US5882988A (en) * 1995-08-16 1999-03-16 Philips Electronics North America Corporation Semiconductor chip-making without scribing

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5300461A (en) * 1993-01-25 1994-04-05 Intel Corporation Process for fabricating sealed semiconductor chip using silicon nitride passivation film
US5742094A (en) * 1993-01-25 1998-04-21 Intel Corporation Sealed semiconductor chip
US5882988A (en) * 1995-08-16 1999-03-16 Philips Electronics North America Corporation Semiconductor chip-making without scribing

Also Published As

Publication number Publication date
JPS5952542B2 (en) 1984-12-20

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