JPS57176747A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57176747A
JPS57176747A JP6113181A JP6113181A JPS57176747A JP S57176747 A JPS57176747 A JP S57176747A JP 6113181 A JP6113181 A JP 6113181A JP 6113181 A JP6113181 A JP 6113181A JP S57176747 A JPS57176747 A JP S57176747A
Authority
JP
Japan
Prior art keywords
layer
aluminum
film
vapor phase
psg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6113181A
Other languages
Japanese (ja)
Inventor
Takashi Okano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6113181A priority Critical patent/JPS57176747A/en
Publication of JPS57176747A publication Critical patent/JPS57176747A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent a projection produced on the surface of an aluminum layer by the surface treatment of the layer when a PSG film is formed by a vapor phase growing method on the aluminum wire layer of a semiconductor integrated circuit device. CONSTITUTION:An aluminum layer is formed on an oxide insulating layer on a silicon substrate, a wiring is patterned, and is then dipped in a mixture solution of phosphoric acid and ethyl alcohol, thereby forming an alumina film on the surface of an aluminum wire. To smoothen the stepwise difference on the film, a silicon oxidized film is formed by a coating method, and a PSG layer is grown in vapor phase on the substrate at 430 deg.C, thereby preventing the production of a projection on the surface of an aluminum wiring layer.
JP6113181A 1981-04-23 1981-04-23 Manufacture of semiconductor device Pending JPS57176747A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6113181A JPS57176747A (en) 1981-04-23 1981-04-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6113181A JPS57176747A (en) 1981-04-23 1981-04-23 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57176747A true JPS57176747A (en) 1982-10-30

Family

ID=13162211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6113181A Pending JPS57176747A (en) 1981-04-23 1981-04-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57176747A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6236843A (en) * 1985-08-10 1987-02-17 Fujitsu Ltd Manufacture of semiconductor device
JPS63257247A (en) * 1987-04-14 1988-10-25 Fujitsu Ltd Manufacture of semiconductor device
US5470816A (en) * 1993-07-08 1995-11-28 Nippon Paper Industries Co., Ltd. Thermal recording sheet

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6236843A (en) * 1985-08-10 1987-02-17 Fujitsu Ltd Manufacture of semiconductor device
JPS63257247A (en) * 1987-04-14 1988-10-25 Fujitsu Ltd Manufacture of semiconductor device
JPH0573260B2 (en) * 1987-04-14 1993-10-14 Fujitsu Ltd
US5470816A (en) * 1993-07-08 1995-11-28 Nippon Paper Industries Co., Ltd. Thermal recording sheet
US5612279A (en) * 1993-07-08 1997-03-18 Nippon Paper Industries, Ltd. Optical recording sheet

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