JPS57176747A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57176747A JPS57176747A JP6113181A JP6113181A JPS57176747A JP S57176747 A JPS57176747 A JP S57176747A JP 6113181 A JP6113181 A JP 6113181A JP 6113181 A JP6113181 A JP 6113181A JP S57176747 A JPS57176747 A JP S57176747A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- aluminum
- film
- vapor phase
- psg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To prevent a projection produced on the surface of an aluminum layer by the surface treatment of the layer when a PSG film is formed by a vapor phase growing method on the aluminum wire layer of a semiconductor integrated circuit device. CONSTITUTION:An aluminum layer is formed on an oxide insulating layer on a silicon substrate, a wiring is patterned, and is then dipped in a mixture solution of phosphoric acid and ethyl alcohol, thereby forming an alumina film on the surface of an aluminum wire. To smoothen the stepwise difference on the film, a silicon oxidized film is formed by a coating method, and a PSG layer is grown in vapor phase on the substrate at 430 deg.C, thereby preventing the production of a projection on the surface of an aluminum wiring layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6113181A JPS57176747A (en) | 1981-04-23 | 1981-04-23 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6113181A JPS57176747A (en) | 1981-04-23 | 1981-04-23 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57176747A true JPS57176747A (en) | 1982-10-30 |
Family
ID=13162211
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6113181A Pending JPS57176747A (en) | 1981-04-23 | 1981-04-23 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57176747A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6236843A (en) * | 1985-08-10 | 1987-02-17 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS63257247A (en) * | 1987-04-14 | 1988-10-25 | Fujitsu Ltd | Manufacture of semiconductor device |
US5470816A (en) * | 1993-07-08 | 1995-11-28 | Nippon Paper Industries Co., Ltd. | Thermal recording sheet |
-
1981
- 1981-04-23 JP JP6113181A patent/JPS57176747A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6236843A (en) * | 1985-08-10 | 1987-02-17 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS63257247A (en) * | 1987-04-14 | 1988-10-25 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0573260B2 (en) * | 1987-04-14 | 1993-10-14 | Fujitsu Ltd | |
US5470816A (en) * | 1993-07-08 | 1995-11-28 | Nippon Paper Industries Co., Ltd. | Thermal recording sheet |
US5612279A (en) * | 1993-07-08 | 1997-03-18 | Nippon Paper Industries, Ltd. | Optical recording sheet |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0195970A3 (en) | Method for passivating an undercut in semiconductor device preparation | |
JPS57176747A (en) | Manufacture of semiconductor device | |
JPS54154272A (en) | Contact forming method for semiconductor device | |
JPS5233490A (en) | Manufacturing process of semiconductor device | |
JPS57154855A (en) | Manufacture of semiconductor device | |
JPS57204148A (en) | Manufacture of semiconductor device | |
JPS551109A (en) | Manufacture of semiconductor device | |
JPS5772333A (en) | Manufacture of semiconductor device | |
JPS5495185A (en) | Production of semiconductor device | |
JPS52147992A (en) | Manufacture of semiconductor device | |
JPS56137648A (en) | Manufacture of semiconductor device | |
JPS56129337A (en) | Insulative separation structure for semiconductor monolithic integrated circuit | |
JPS5513995A (en) | Method of producing a semiconductor device | |
JPS5522833A (en) | Manufacturing of semiconductor device | |
JPS5536927A (en) | Manufacturing of semiconductor device | |
JPS55154750A (en) | Manufacture of semiconductor device | |
JPS6418242A (en) | Manufacture of semiconductor device | |
JPS5555547A (en) | Method of forming electrode and wiring layer of semiconductor device | |
JPS5271980A (en) | Formation of metal wiring | |
JPS54103682A (en) | Production of semiconductor device | |
JPS5513964A (en) | Method of manufacturing semiconductor device | |
JPS5555546A (en) | Method of wiring semiconductor device | |
JPS5352388A (en) | Semiconductor device | |
JPS5536926A (en) | Manufacturing of semiconductor device | |
JPS551150A (en) | Method of fabricating semiconductor device |