JPS52147992A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS52147992A JPS52147992A JP6489576A JP6489576A JPS52147992A JP S52147992 A JPS52147992 A JP S52147992A JP 6489576 A JP6489576 A JP 6489576A JP 6489576 A JP6489576 A JP 6489576A JP S52147992 A JPS52147992 A JP S52147992A
- Authority
- JP
- Japan
- Prior art keywords
- film
- prevent
- manufacture
- semiconductor device
- insulation film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To prevent the irregular layer formation due to the reaction between substrate and insulation film at the thermal treatment time as well as to prevent the heat distortion caused by the difference of the heat expansion coefficient in order to eliminate the output drop of a luminous unit by the following procedure: an oxidation is given to the surface of a chemical compound semiconductor substate to form an oxide film, on which an insulation film such as Si3N4 film or Al2O3 film, etc. is coated.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6489576A JPS52147992A (en) | 1976-06-02 | 1976-06-02 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6489576A JPS52147992A (en) | 1976-06-02 | 1976-06-02 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52147992A true JPS52147992A (en) | 1977-12-08 |
Family
ID=13271258
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6489576A Pending JPS52147992A (en) | 1976-06-02 | 1976-06-02 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52147992A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55156327A (en) * | 1979-05-23 | 1980-12-05 | Fujitsu Ltd | Manufacture for semiconductor |
JPS568828A (en) * | 1979-07-04 | 1981-01-29 | Nec Corp | Manufacture of semiconductor device |
JPS58141524A (en) * | 1982-02-17 | 1983-08-22 | Hitachi Ltd | Formation of diffusion mask |
JPS6188705U (en) * | 1984-11-14 | 1986-06-10 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4838692A (en) * | 1971-09-10 | 1973-06-07 |
-
1976
- 1976-06-02 JP JP6489576A patent/JPS52147992A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4838692A (en) * | 1971-09-10 | 1973-06-07 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55156327A (en) * | 1979-05-23 | 1980-12-05 | Fujitsu Ltd | Manufacture for semiconductor |
JPS5811729B2 (en) * | 1979-05-23 | 1983-03-04 | 富士通株式会社 | Manufacturing method of semiconductor device |
JPS568828A (en) * | 1979-07-04 | 1981-01-29 | Nec Corp | Manufacture of semiconductor device |
JPS6232617B2 (en) * | 1979-07-04 | 1987-07-15 | Nippon Electric Co | |
JPS58141524A (en) * | 1982-02-17 | 1983-08-22 | Hitachi Ltd | Formation of diffusion mask |
JPS6188705U (en) * | 1984-11-14 | 1986-06-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5474682A (en) | Semiconductor and its manufacture | |
JPS56142630A (en) | Manufacture of semiconductor device | |
JPS5351970A (en) | Manufacture for semiconductor substrate | |
JPS5267969A (en) | Manufacture of semiconductor unit | |
JPS52147992A (en) | Manufacture of semiconductor device | |
JPS5331964A (en) | Production of semiconductor substrates | |
JPS5420671A (en) | Production of semiconductor devices | |
JPS543473A (en) | Manufacture of semiconductor device | |
JPS5244795A (en) | Formation of silicon nitride film | |
JPS542070A (en) | Manufacture for semiconductor element | |
JPS5268371A (en) | Semiconductor device | |
JPS551129A (en) | Manufacture of semiconductor device | |
JPS5392666A (en) | Manufacture of semiconductor device | |
JPS52134376A (en) | Production of semiconductor device | |
JPS5269571A (en) | Thermal oxidation method for semiconductor wafer | |
JPS5271980A (en) | Formation of metal wiring | |
JPS53130979A (en) | Manufacture for semiconductor device | |
JPS533066A (en) | Electrode formation method | |
JPS5335375A (en) | Heating method | |
JPS53142870A (en) | Manufacture for semiconductor device | |
JPS5353961A (en) | Production of semiconductor wafer | |
JPS5354972A (en) | Production of semiconductor device | |
JPS5243369A (en) | Flat etching method for silicon | |
JPS52117559A (en) | Mask formation method | |
JPS54888A (en) | Manufacture of unijunction transistor |