JPS568828A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS568828A
JPS568828A JP8515779A JP8515779A JPS568828A JP S568828 A JPS568828 A JP S568828A JP 8515779 A JP8515779 A JP 8515779A JP 8515779 A JP8515779 A JP 8515779A JP S568828 A JPS568828 A JP S568828A
Authority
JP
Japan
Prior art keywords
film
substrate
mask
wafer
si3n4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8515779A
Other languages
Japanese (ja)
Other versions
JPS6232617B2 (en
Inventor
Hirobumi Mizuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8515779A priority Critical patent/JPS568828A/en
Publication of JPS568828A publication Critical patent/JPS568828A/en
Publication of JPS6232617B2 publication Critical patent/JPS6232617B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To eliminate the occurrence of a damage on the surface of a substrate in a semiconductor device by laminating an oxide film and a nitride film on the surface of the substrate when forming selectively the nittide film on the surface of a semiconductor substrate, retaining necessary nitride film, thereafter etching the oxide film using a mask having larger size than the nitride film. CONSTITUTION:A buffer layer 12 is coated on a semiconductor substrate 11 of GaAs or the like, a mesa portion 14 is formed thereon, an operation layer 13 is formed on the top of the mesa portion to form a semiconductor wafer 10. When a desired Si3N4 film 22 isolated from the layer 13 is formed then on wafer 10, an SiO2 film 21 and an Si3N4 film 22 are laminated on the entire surface of the wafer 10, are grown in vapor phase, are plasma etched with a mask of a photoresist film, and the film 22 is retained only on bonding pad portion 50. Thereafter, the film 21 is removed using an etchant with a mask large than the film 22, and there can be obtained a structure of an SiO2 film and an Si3N4 film extended from the GaAs substrate at the pad 50.
JP8515779A 1979-07-04 1979-07-04 Manufacture of semiconductor device Granted JPS568828A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8515779A JPS568828A (en) 1979-07-04 1979-07-04 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8515779A JPS568828A (en) 1979-07-04 1979-07-04 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS568828A true JPS568828A (en) 1981-01-29
JPS6232617B2 JPS6232617B2 (en) 1987-07-15

Family

ID=13850825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8515779A Granted JPS568828A (en) 1979-07-04 1979-07-04 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS568828A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52147992A (en) * 1976-06-02 1977-12-08 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS5367357A (en) * 1976-11-27 1978-06-15 Nec Corp Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52147992A (en) * 1976-06-02 1977-12-08 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS5367357A (en) * 1976-11-27 1978-06-15 Nec Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6232617B2 (en) 1987-07-15

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