JPS6421940A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6421940A
JPS6421940A JP17826387A JP17826387A JPS6421940A JP S6421940 A JPS6421940 A JP S6421940A JP 17826387 A JP17826387 A JP 17826387A JP 17826387 A JP17826387 A JP 17826387A JP S6421940 A JPS6421940 A JP S6421940A
Authority
JP
Japan
Prior art keywords
insulating film
groove
etching
mask
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17826387A
Other languages
Japanese (ja)
Other versions
JPH0713999B2 (en
Inventor
Nobuaki Yamamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62178263A priority Critical patent/JPH0713999B2/en
Publication of JPS6421940A publication Critical patent/JPS6421940A/en
Publication of JPH0713999B2 publication Critical patent/JPH0713999B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To prevent the yield of a step on the surface of a groove part, by forming a groove, performing side etching of a first insulating film with a second insulating film as a mask, and filling a third insulating film. CONSTITUTION:A groove is provided on a semiconductor substrate 1. An insulating film is formed at the groove. A semiconductor device is manufactured through these steps. At this time, a first oxide insulating film 3 is formed on the semiconductor substrates 1 and 2. A second nitride insulating film 4, which is etched with etching species different from the first insulating film 3, is continuously formed on the surface. A groove is formed by anisotropic etching with photoresist 5 as a mask. With the second insulating film 4 as a mask, the first insulating film 3 is side-etched by isotropic etching. A third insulating film 3' is formed on the surface. Thereafter, the third insulating film on the second insulating film 4 is removed by isotropic etching. An insulating film part 6, which is the embedded part of the remaining insulating film 3', is formed in said groove. For example, the oxide film 3' is formed in the groove by thermal oxidation, and then the polysilicon 6 is formed.
JP62178263A 1987-07-16 1987-07-16 Method for manufacturing semiconductor device Expired - Lifetime JPH0713999B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62178263A JPH0713999B2 (en) 1987-07-16 1987-07-16 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62178263A JPH0713999B2 (en) 1987-07-16 1987-07-16 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS6421940A true JPS6421940A (en) 1989-01-25
JPH0713999B2 JPH0713999B2 (en) 1995-02-15

Family

ID=16045432

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62178263A Expired - Lifetime JPH0713999B2 (en) 1987-07-16 1987-07-16 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPH0713999B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5830774A (en) * 1996-06-24 1998-11-03 Motorola, Inc. Method for forming a metal pattern on a substrate
US6121113A (en) * 1997-06-30 2000-09-19 Fujitsu Limited Method for production of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60226136A (en) * 1984-04-25 1985-11-11 Hitachi Ltd Complementary type metal insulated semiconductor device and manufacture of the same
JPS62112345A (en) * 1985-11-11 1987-05-23 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60226136A (en) * 1984-04-25 1985-11-11 Hitachi Ltd Complementary type metal insulated semiconductor device and manufacture of the same
JPS62112345A (en) * 1985-11-11 1987-05-23 Fujitsu Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5830774A (en) * 1996-06-24 1998-11-03 Motorola, Inc. Method for forming a metal pattern on a substrate
US6121113A (en) * 1997-06-30 2000-09-19 Fujitsu Limited Method for production of semiconductor device

Also Published As

Publication number Publication date
JPH0713999B2 (en) 1995-02-15

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