JPS6420663A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To prevent a silicon base plate from damaging, contaminating, to prevent a gate electrode material from overoxidizing, and to form a semiconductor device stably with good reproducibility by providing a silicon nitride with an effect as a stopper at the time of forming a sidewall and as a spacer between sidewall gate materials. CONSTITUTION:An oxide film is formed as a gate insulating film on an Si substrate 6. Then, it is covered with an insulating film 3, and a gate electrode made of polycrystalline Si having the film 3 at the top is formed by etching step employing photoresist. Further, after a silicon nitride film 2 is formed on a whole surface, a sidewall film 1 is formed by a vapor growing method. Then, the whole surface is etched by an anisotropic ion etching method to form a sidewall 1'. With the film 2 as an etching stopper the sidewall can be formed without damaging or contaminating not only the substrate 6 but a gate oxide film 5. Further, the effect of a spacer between the sidewall gate materials is provided at the film 2 to prevent electrode materials from overoxidizing.