JPS5696865A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5696865A JPS5696865A JP17320579A JP17320579A JPS5696865A JP S5696865 A JPS5696865 A JP S5696865A JP 17320579 A JP17320579 A JP 17320579A JP 17320579 A JP17320579 A JP 17320579A JP S5696865 A JPS5696865 A JP S5696865A
- Authority
- JP
- Japan
- Prior art keywords
- type
- ions
- injected
- oxide film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010408 film Substances 0.000 abstract 5
- 150000002500 ions Chemical class 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 238000011109 contamination Methods 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain the semiconductor device having the same advantages as an MIS device having a V-shaped groove by forming a recess without using forming means with chemicals such as anisotropic etching or the like. CONSTITUTION:A p type epitaxial layer 21 is superposed on an n<+> type Si substrate 20, an Si3N4 mask 23 is formed on an SiO2 thin film 22 using a resist 24, ions are injected thereto, and a p type layer 25 is formed thereon. The resist is removed, a field oxide film 26 is formed thereon, ions are injected thereonto, and an n<+> type layer 27 is formed thereon. An Si3N4 mask 28 is formed again thereon, and the film 26 is etched and removed. A thick oxide film 29 is formed again thereon, and the lower end is arrived at the n<+> type substrate 20. Then, the layer 25 is partly divided into channels 25C. The films 29, 23, 28 are etched, a gate oxide film 30 is formed in the recess, B ions are injected thereto, the threshold value is adjusted, a gate electrode 31 is formed thereafter thereon, a PSG32 is covered thereon, and electrodes 33D, 33G are attached thereon. According to this configuration no contamination with chemicals occurs, the selection of planar azimuth is unnecessary, and the device having the same advantages as the MIS with V-shaped groove can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17320579A JPS5696865A (en) | 1979-12-30 | 1979-12-30 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17320579A JPS5696865A (en) | 1979-12-30 | 1979-12-30 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5696865A true JPS5696865A (en) | 1981-08-05 |
Family
ID=15956053
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17320579A Pending JPS5696865A (en) | 1979-12-30 | 1979-12-30 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5696865A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60124970A (en) * | 1983-12-10 | 1985-07-04 | Matsushita Electronics Corp | Manufacture of fet |
WO1993003502A1 (en) * | 1991-07-26 | 1993-02-18 | Nippondenso Co., Ltd. | Method of producing vertical mosfet |
US5470770A (en) * | 1994-03-31 | 1995-11-28 | Nippondenso Co., Ltd. | Manufacturing method of semiconductor device |
US5672524A (en) * | 1995-08-01 | 1997-09-30 | Advanced Micro Devices, Inc. | Three-dimensional complementary field effect transistor process |
US5877527A (en) * | 1996-04-26 | 1999-03-02 | Denso Corporation | Semiconductor device and method of producing the same |
US5920784A (en) * | 1994-06-08 | 1999-07-06 | Samsung Electronics Co., Ltd. | Method for manufacturing a buried transistor |
US6015737A (en) * | 1991-07-26 | 2000-01-18 | Denso Corporation | Production method of a vertical type MOSFET |
EP1009022A1 (en) * | 1998-12-09 | 2000-06-14 | STMicroelectronics S.r.l. | Manufacturing process of a high integration density power MOS device |
US6603173B1 (en) | 1991-07-26 | 2003-08-05 | Denso Corporation | Vertical type MOSFET |
-
1979
- 1979-12-30 JP JP17320579A patent/JPS5696865A/en active Pending
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0576787B2 (en) * | 1983-12-10 | 1993-10-25 | Matsushita Electronics Corp | |
JPS60124970A (en) * | 1983-12-10 | 1985-07-04 | Matsushita Electronics Corp | Manufacture of fet |
US6015737A (en) * | 1991-07-26 | 2000-01-18 | Denso Corporation | Production method of a vertical type MOSFET |
US5460985A (en) * | 1991-07-26 | 1995-10-24 | Ipics Corporation | Production method of a verticle type MOSFET |
WO1993003502A1 (en) * | 1991-07-26 | 1993-02-18 | Nippondenso Co., Ltd. | Method of producing vertical mosfet |
US6603173B1 (en) | 1991-07-26 | 2003-08-05 | Denso Corporation | Vertical type MOSFET |
US5470770A (en) * | 1994-03-31 | 1995-11-28 | Nippondenso Co., Ltd. | Manufacturing method of semiconductor device |
US5920784A (en) * | 1994-06-08 | 1999-07-06 | Samsung Electronics Co., Ltd. | Method for manufacturing a buried transistor |
US5672524A (en) * | 1995-08-01 | 1997-09-30 | Advanced Micro Devices, Inc. | Three-dimensional complementary field effect transistor process |
US5925909A (en) * | 1995-08-01 | 1999-07-20 | Advanced Micro Devices, Inc. | Three-dimensional complementary field effect transistor process and structures |
US5877527A (en) * | 1996-04-26 | 1999-03-02 | Denso Corporation | Semiconductor device and method of producing the same |
US6114207A (en) * | 1996-04-26 | 2000-09-05 | Denso Corporation | Method of producing a semiconductor device |
US6278155B1 (en) | 1996-04-26 | 2001-08-21 | Denso Corporation | P-channel MOSFET semiconductor device having a low on resistance |
EP1009022A1 (en) * | 1998-12-09 | 2000-06-14 | STMicroelectronics S.r.l. | Manufacturing process of a high integration density power MOS device |
US6541318B2 (en) | 1998-12-09 | 2003-04-01 | Stmicroelectronics, S.R.L. | Manufacturing process of a high integration density power MOS device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5696865A (en) | Manufacture of semiconductor device | |
JPS5599744A (en) | Manufacture of semiconductor device | |
JPS55154748A (en) | Complementary mos semiconductor device | |
JPS6420663A (en) | Manufacture of semiconductor device | |
JPS5764973A (en) | Manufacture os semiconductor device | |
JPS55162270A (en) | Semiconductor device | |
JPS5688356A (en) | Manufacture of memory cell | |
JPS56131960A (en) | Semiconductor device and its preparation | |
JPS54153583A (en) | Semiconductor device | |
JPS5646557A (en) | Transistor | |
JPS5679446A (en) | Production of semiconductor device | |
JPS5613743A (en) | Semiconductor device and its manufacture | |
JPS5561070A (en) | Semiconductor device | |
JPS56111241A (en) | Preparation of semiconductor device | |
JPS54156482A (en) | Manufacture for field effect type semiconductor device | |
JPS54124687A (en) | Production of semiconductor device | |
JPS5633823A (en) | Preparation of semiconductor device | |
JPS5691433A (en) | Preparation of semiconductor device | |
JPS6424460A (en) | Manufacture of semiconductor device | |
JPS5587480A (en) | Insulated gate type field effect transistor and manufacture thereof | |
JPS6425576A (en) | Manufacture of semiconductor device | |
JPS56147447A (en) | Manufacture of mosic | |
JPS56112758A (en) | Insulated gate type semiconductor device and manufacture thereof | |
JPS5791537A (en) | Manufacture of semiconductor device | |
JPS57155767A (en) | Manufacture of semiconductor device |