JPS6410628A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6410628A JPS6410628A JP16601187A JP16601187A JPS6410628A JP S6410628 A JPS6410628 A JP S6410628A JP 16601187 A JP16601187 A JP 16601187A JP 16601187 A JP16601187 A JP 16601187A JP S6410628 A JPS6410628 A JP S6410628A
- Authority
- JP
- Japan
- Prior art keywords
- film
- etched
- si3n4
- holes
- etchant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To sufficiently execute a reactive ion etching operation to an SiO2 film, to prevent an etching omission and to obtain a high-performance device by a method wherein an Si3N4 film is formed by a plasma etching method and a contact hole is made. CONSTITUTION:A gate electrode 13 composed of polysilicon is formed on a silicon substrate 12; an Si3N4 film 14 with a thickness of about 1000Angstrom is formed on the electrode by a CVD method; an SiO2 film 15 with a thickness of about 5000Angstrom is formed by the CVD method; after that, a resist is coated and a resist film 16 is formed. Then, the SiO2 film 15 is etched by a reactive ion etching method using CHF3 gas containing, e.g., 5% of O2 as an etchant. After this operation, the Si3N4 film 14 is etched by a plasma etching method using CF4 gas as the etchant; holes corresponding to holes 17 are made in the Si3N4 film 14. After completion of the etching operation, a thermal oxide film 11 is wet- etched by using a buffer HF solution; contact holes 18 are made; after that, a semiconductor device is completed by way of an Al wiring process and the like.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16601187A JPS6410628A (en) | 1987-07-02 | 1987-07-02 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16601187A JPS6410628A (en) | 1987-07-02 | 1987-07-02 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6410628A true JPS6410628A (en) | 1989-01-13 |
Family
ID=15823242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16601187A Pending JPS6410628A (en) | 1987-07-02 | 1987-07-02 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6410628A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5210054A (en) * | 1990-11-16 | 1993-05-11 | Sharp Kabushiki Kaisha | Method for forming a contact plug |
| KR100367497B1 (en) * | 1995-12-29 | 2003-03-03 | 주식회사 하이닉스반도체 | Method for manufacturing contact hole in semiconductor device |
-
1987
- 1987-07-02 JP JP16601187A patent/JPS6410628A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5210054A (en) * | 1990-11-16 | 1993-05-11 | Sharp Kabushiki Kaisha | Method for forming a contact plug |
| KR100367497B1 (en) * | 1995-12-29 | 2003-03-03 | 주식회사 하이닉스반도체 | Method for manufacturing contact hole in semiconductor device |
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