JPS57211787A - Amorphous silicon diode - Google Patents
Amorphous silicon diodeInfo
- Publication number
- JPS57211787A JPS57211787A JP56096678A JP9667881A JPS57211787A JP S57211787 A JPS57211787 A JP S57211787A JP 56096678 A JP56096678 A JP 56096678A JP 9667881 A JP9667881 A JP 9667881A JP S57211787 A JPS57211787 A JP S57211787A
- Authority
- JP
- Japan
- Prior art keywords
- film
- etching
- amorphous silicon
- sio2
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 239000010408 film Substances 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 238000005530 etching Methods 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 230000006866 deterioration Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 238000009832 plasma treatment Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To prevent a deterioration in diode characteristics by etching by a method wherein an SiO2 is formed at the end surface of an amorphous silicon film after etching. CONSTITUTION:An SiO2 film 5 is unitedly formed on the etching end surface section (section A) of an amorphous silicon thin film 3. In this case, after applying CF4 plasma etching to the film 3 by using an upper contact electrode 4 or resist as a mask, plasma treatment is applied to the film 3 under O2 atmosphere and then Si and O2 on the etching terminal surface (section A) of the film 3 are combined to form SiO2 in the SiO2 film 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56096678A JPS57211787A (en) | 1981-06-24 | 1981-06-24 | Amorphous silicon diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56096678A JPS57211787A (en) | 1981-06-24 | 1981-06-24 | Amorphous silicon diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57211787A true JPS57211787A (en) | 1982-12-25 |
Family
ID=14171449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56096678A Pending JPS57211787A (en) | 1981-06-24 | 1981-06-24 | Amorphous silicon diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57211787A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS605573A (en) * | 1983-06-23 | 1985-01-12 | Citizen Watch Co Ltd | Manufacture of thin film diode |
| US4810637A (en) * | 1985-05-07 | 1989-03-07 | Thomson-Csf | Non-linear control element for a flat electrooptical display screen and a method of fabrication of said control element |
| US4999693A (en) * | 1986-01-06 | 1991-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device with a high response speed |
| US5336906A (en) * | 1986-09-09 | 1994-08-09 | Fuji Xerox Co., Ltd. | Image sensor and method of manufacture |
| JPH0774374A (en) * | 1994-03-10 | 1995-03-17 | Citizen Watch Co Ltd | Thin film diode and manufacture thereof |
-
1981
- 1981-06-24 JP JP56096678A patent/JPS57211787A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS605573A (en) * | 1983-06-23 | 1985-01-12 | Citizen Watch Co Ltd | Manufacture of thin film diode |
| JPH0568865B2 (en) * | 1983-06-23 | 1993-09-29 | Citizen Watch Co Ltd | |
| US4810637A (en) * | 1985-05-07 | 1989-03-07 | Thomson-Csf | Non-linear control element for a flat electrooptical display screen and a method of fabrication of said control element |
| US4999693A (en) * | 1986-01-06 | 1991-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device with a high response speed |
| US5336906A (en) * | 1986-09-09 | 1994-08-09 | Fuji Xerox Co., Ltd. | Image sensor and method of manufacture |
| JPH0774374A (en) * | 1994-03-10 | 1995-03-17 | Citizen Watch Co Ltd | Thin film diode and manufacture thereof |
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