JPS5475275A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5475275A JPS5475275A JP14318677A JP14318677A JPS5475275A JP S5475275 A JPS5475275 A JP S5475275A JP 14318677 A JP14318677 A JP 14318677A JP 14318677 A JP14318677 A JP 14318677A JP S5475275 A JPS5475275 A JP S5475275A
- Authority
- JP
- Japan
- Prior art keywords
- film
- poly
- etching
- thin
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Abstract
PURPOSE: To ensure the assured lift-off even with the thin resist film by using the resist film and poly Si film together, and thus to secure the remains of the uniform poly Si thin film even with etching of the poly Si.
CONSTITUTION: The opening is provided to SiO2 on Si substrate 1 to form poly Si thin film 1', and then poly Si1', SiO22' and poly Si1" are formed continuously through the CVD method. The gas etching is given via CF4 after formation of resist mask 3, and the etching is stopped at film 2'. Thin film 2' is then removed by being soaked into the HF-group solution. Then Al electrode 4 is evaporated, and film 3 is fused to lift off film 4. And the plasma etching is applied to film 1", 2' and 1' respectively via mask 4.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14318677A JPS5475275A (en) | 1977-11-29 | 1977-11-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14318677A JPS5475275A (en) | 1977-11-29 | 1977-11-29 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5475275A true JPS5475275A (en) | 1979-06-15 |
Family
ID=15332871
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14318677A Pending JPS5475275A (en) | 1977-11-29 | 1977-11-29 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5475275A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5958012U (en) * | 1982-10-08 | 1984-04-16 | トヨタ自動車株式会社 | Filter device in fuel tank |
JPS618955A (en) * | 1984-06-22 | 1986-01-16 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | Method of forming metal contact in semiconductor device |
-
1977
- 1977-11-29 JP JP14318677A patent/JPS5475275A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5958012U (en) * | 1982-10-08 | 1984-04-16 | トヨタ自動車株式会社 | Filter device in fuel tank |
JPS618955A (en) * | 1984-06-22 | 1986-01-16 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | Method of forming metal contact in semiconductor device |
JPH0312767B2 (en) * | 1984-06-22 | 1991-02-21 | Intaanashonaru Bijinesu Mashiinzu Corp |
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