JPS5443466A - Electrode formation method for semiconductor device - Google Patents
Electrode formation method for semiconductor deviceInfo
- Publication number
- JPS5443466A JPS5443466A JP11020477A JP11020477A JPS5443466A JP S5443466 A JPS5443466 A JP S5443466A JP 11020477 A JP11020477 A JP 11020477A JP 11020477 A JP11020477 A JP 11020477A JP S5443466 A JPS5443466 A JP S5443466A
- Authority
- JP
- Japan
- Prior art keywords
- opening
- electrode
- resist
- life
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Weting (AREA)
Abstract
PURPOSE: To form a thick electrode through life-off method by applying the dissolution to the electrode metal layer before removing the resist film to be used for life-off.
CONSTITUTION: An opening is drilled selectively to an SiO24 on the Si substrate via resist mask 7, and then covered with Al layer 8. Thus, the thickness is small at the end of the opening and large at other areas. The opening end thin film part is dissolved through the heated phosphoric acid to be made thinner, and then the resist is fused away. As a result, the opening edge is cut off to remove the Al layer. After this, a heat treatment is given at 500°C for about 30 minutes to form thick film electrode 9.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11020477A JPS5443466A (en) | 1977-09-12 | 1977-09-12 | Electrode formation method for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11020477A JPS5443466A (en) | 1977-09-12 | 1977-09-12 | Electrode formation method for semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5443466A true JPS5443466A (en) | 1979-04-06 |
JPS6141129B2 JPS6141129B2 (en) | 1986-09-12 |
Family
ID=14529684
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11020477A Granted JPS5443466A (en) | 1977-09-12 | 1977-09-12 | Electrode formation method for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5443466A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5743419A (en) * | 1980-08-29 | 1982-03-11 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS57176769A (en) * | 1981-04-21 | 1982-10-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and manufacture thereof |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS519382A (en) * | 1974-07-11 | 1976-01-26 | Kyushu Nippon Electric | KINZOKUHAKUMAKUKEISEIHOHO |
-
1977
- 1977-09-12 JP JP11020477A patent/JPS5443466A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS519382A (en) * | 1974-07-11 | 1976-01-26 | Kyushu Nippon Electric | KINZOKUHAKUMAKUKEISEIHOHO |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5743419A (en) * | 1980-08-29 | 1982-03-11 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS57176769A (en) * | 1981-04-21 | 1982-10-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and manufacture thereof |
Also Published As
Publication number | Publication date |
---|---|
JPS6141129B2 (en) | 1986-09-12 |
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