JPS5443466A - Electrode formation method for semiconductor device - Google Patents

Electrode formation method for semiconductor device

Info

Publication number
JPS5443466A
JPS5443466A JP11020477A JP11020477A JPS5443466A JP S5443466 A JPS5443466 A JP S5443466A JP 11020477 A JP11020477 A JP 11020477A JP 11020477 A JP11020477 A JP 11020477A JP S5443466 A JPS5443466 A JP S5443466A
Authority
JP
Japan
Prior art keywords
opening
electrode
resist
life
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11020477A
Other languages
Japanese (ja)
Other versions
JPS6141129B2 (en
Inventor
Hiroshi Miike
Goro Hagio
Masami Yokozawa
Hideaki Nagura
Kanji Mizukoshi
Mikio Nishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP11020477A priority Critical patent/JPS5443466A/en
Publication of JPS5443466A publication Critical patent/JPS5443466A/en
Publication of JPS6141129B2 publication Critical patent/JPS6141129B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To form a thick electrode through life-off method by applying the dissolution to the electrode metal layer before removing the resist film to be used for life-off.
CONSTITUTION: An opening is drilled selectively to an SiO24 on the Si substrate via resist mask 7, and then covered with Al layer 8. Thus, the thickness is small at the end of the opening and large at other areas. The opening end thin film part is dissolved through the heated phosphoric acid to be made thinner, and then the resist is fused away. As a result, the opening edge is cut off to remove the Al layer. After this, a heat treatment is given at 500°C for about 30 minutes to form thick film electrode 9.
COPYRIGHT: (C)1979,JPO&Japio
JP11020477A 1977-09-12 1977-09-12 Electrode formation method for semiconductor device Granted JPS5443466A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11020477A JPS5443466A (en) 1977-09-12 1977-09-12 Electrode formation method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11020477A JPS5443466A (en) 1977-09-12 1977-09-12 Electrode formation method for semiconductor device

Publications (2)

Publication Number Publication Date
JPS5443466A true JPS5443466A (en) 1979-04-06
JPS6141129B2 JPS6141129B2 (en) 1986-09-12

Family

ID=14529684

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11020477A Granted JPS5443466A (en) 1977-09-12 1977-09-12 Electrode formation method for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5443466A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5743419A (en) * 1980-08-29 1982-03-11 Fujitsu Ltd Manufacture of semiconductor device
JPS57176769A (en) * 1981-04-21 1982-10-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS519382A (en) * 1974-07-11 1976-01-26 Kyushu Nippon Electric KINZOKUHAKUMAKUKEISEIHOHO

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS519382A (en) * 1974-07-11 1976-01-26 Kyushu Nippon Electric KINZOKUHAKUMAKUKEISEIHOHO

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5743419A (en) * 1980-08-29 1982-03-11 Fujitsu Ltd Manufacture of semiconductor device
JPS57176769A (en) * 1981-04-21 1982-10-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPS6141129B2 (en) 1986-09-12

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