JPS57124431A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57124431A
JPS57124431A JP967281A JP967281A JPS57124431A JP S57124431 A JPS57124431 A JP S57124431A JP 967281 A JP967281 A JP 967281A JP 967281 A JP967281 A JP 967281A JP S57124431 A JPS57124431 A JP S57124431A
Authority
JP
Japan
Prior art keywords
film
alloy
implanted
projections
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP967281A
Other languages
Japanese (ja)
Inventor
Iwao Higashinakagaha
Katsuo Koike
Kei Kirita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP967281A priority Critical patent/JPS57124431A/en
Publication of JPS57124431A publication Critical patent/JPS57124431A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Abstract

PURPOSE:To prevent the formation of projections on the surface of a metal film when a heat treatment is performed by a method wherein, after the metal wiring film has been formed, a rare-gas element or B, As, P or Si ion is implanted. CONSTITUTION:An SiO2 film 3 is formed on the P type Si substrate 1 whereon an N<+> type diffusion layer was formed, and a contact hole is provided on the SiO2 film 3. On this SiO film 3, an Al-1.5% Si alloy film 5 of approximately 1.0mum is formed by sputtering, and for example, Ar<+>40KeV is ion-implanted at a dosage of 3X10<15>atom/cm<2>. After a resist patterning process has been performed, an Al-Si alloy is etched, and a PSG film for passivation is formed after the resist has been removed. Accordingly, no projections are formed on the alloy film 5 in the heat treatment process when the PSG film is formed, and the breakdown of the insulating film on the alloy film 5 and the breaking of wiring can be prevented.
JP967281A 1981-01-27 1981-01-27 Manufacture of semiconductor device Pending JPS57124431A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP967281A JPS57124431A (en) 1981-01-27 1981-01-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP967281A JPS57124431A (en) 1981-01-27 1981-01-27 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57124431A true JPS57124431A (en) 1982-08-03

Family

ID=11726691

Family Applications (1)

Application Number Title Priority Date Filing Date
JP967281A Pending JPS57124431A (en) 1981-01-27 1981-01-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57124431A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57183055A (en) * 1981-05-06 1982-11-11 Mitsubishi Electric Corp Semiconductor device
JPS57183053A (en) * 1981-05-06 1982-11-11 Mitsubishi Electric Corp Semiconductor device
JPS59188120A (en) * 1983-03-12 1984-10-25 Ricoh Co Ltd Forming method for thin film
JPS6045040A (en) * 1983-08-23 1985-03-11 Ricoh Co Ltd Formation of thin film pattern
JPS6154644A (en) * 1984-08-25 1986-03-18 Ricoh Co Ltd Thin film and manufacture thereof
JPS6190444A (en) * 1984-10-11 1986-05-08 Ricoh Co Ltd Manufacture of thin film
JPS61137342A (en) * 1984-12-08 1986-06-25 Ricoh Co Ltd Manufacture of thin film
JPH0210856A (en) * 1988-06-29 1990-01-16 Matsushita Electron Corp Manufacture of semiconductor device
JPH0567610A (en) * 1991-03-19 1993-03-19 Nec Corp Semiconductor device and manufacture thereof

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57183055A (en) * 1981-05-06 1982-11-11 Mitsubishi Electric Corp Semiconductor device
JPS57183053A (en) * 1981-05-06 1982-11-11 Mitsubishi Electric Corp Semiconductor device
JPS59188120A (en) * 1983-03-12 1984-10-25 Ricoh Co Ltd Forming method for thin film
JPS6045040A (en) * 1983-08-23 1985-03-11 Ricoh Co Ltd Formation of thin film pattern
JPS6154644A (en) * 1984-08-25 1986-03-18 Ricoh Co Ltd Thin film and manufacture thereof
JPS6190444A (en) * 1984-10-11 1986-05-08 Ricoh Co Ltd Manufacture of thin film
JPS61137342A (en) * 1984-12-08 1986-06-25 Ricoh Co Ltd Manufacture of thin film
JPH0210856A (en) * 1988-06-29 1990-01-16 Matsushita Electron Corp Manufacture of semiconductor device
JPH0567610A (en) * 1991-03-19 1993-03-19 Nec Corp Semiconductor device and manufacture thereof

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