JPS57155775A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57155775A JPS57155775A JP4032381A JP4032381A JPS57155775A JP S57155775 A JPS57155775 A JP S57155775A JP 4032381 A JP4032381 A JP 4032381A JP 4032381 A JP4032381 A JP 4032381A JP S57155775 A JPS57155775 A JP S57155775A
- Authority
- JP
- Japan
- Prior art keywords
- nitride titanium
- film
- tin
- heat treatment
- formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 3
- 150000004767 nitrides Chemical class 0.000 abstract 3
- 239000010936 titanium Substances 0.000 abstract 3
- 229910052719 titanium Inorganic materials 0.000 abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- BLOIXGFLXPCOGW-UHFFFAOYSA-N [Ti].[Sn] Chemical compound [Ti].[Sn] BLOIXGFLXPCOGW-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 150000002736 metal compounds Chemical class 0.000 abstract 1
- 239000005368 silicate glass Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain a semiconductor device having a low-resistant and stable electrode or wiring, by using a metal compound with high melting point and low resistance such as TiN. CONSTITUTION:A field oxide film 2 and gate insulating oxide film 3 are formed on a p type silicon substrate 1, and a nitride titanium (TiN) film is attached over the whole surface by sputtering to pattern it for the formation of a nitride titanium gate electrode 4 and nitride titanium wiring 4a. Thereafter, impurity ion is implanted into an active region to from an ion injected layer 13 with a phosphorous silicate glass film 5 adhered to form a source region 6 and drain region 7 by heat treatment. Next, contact holes 8, 9, 10 are formed for the formation of aluminium electrodes 12a, 12b, 12c. Thus, a MOSFET having a gate electrode stable to heat treatment, is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4032381A JPS57155775A (en) | 1981-03-23 | 1981-03-23 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4032381A JPS57155775A (en) | 1981-03-23 | 1981-03-23 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57155775A true JPS57155775A (en) | 1982-09-25 |
Family
ID=12577393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4032381A Pending JPS57155775A (en) | 1981-03-23 | 1981-03-23 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57155775A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59177968A (en) * | 1983-03-07 | 1984-10-08 | モトロ−ラ・インコ−ポレ−テツド | Titanium nitride mos device gate electrode |
| FR2665980A1 (en) * | 1990-08-20 | 1992-02-21 | Samsung Electronics Co Ltd | METHOD FOR MANUFACTURING A TRANSISTOR HAVING AN INSULATED GRID SEMICONDUCTOR STRUCTURE. |
| JPH04226034A (en) * | 1987-01-30 | 1992-08-14 | Texas Instr Inc <Ti> | Small-region bipolar transistor |
| US6054771A (en) * | 1997-01-31 | 2000-04-25 | Nec Corporation | Interconnection system in a semiconductor device |
-
1981
- 1981-03-23 JP JP4032381A patent/JPS57155775A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59177968A (en) * | 1983-03-07 | 1984-10-08 | モトロ−ラ・インコ−ポレ−テツド | Titanium nitride mos device gate electrode |
| JPH04226034A (en) * | 1987-01-30 | 1992-08-14 | Texas Instr Inc <Ti> | Small-region bipolar transistor |
| FR2665980A1 (en) * | 1990-08-20 | 1992-02-21 | Samsung Electronics Co Ltd | METHOD FOR MANUFACTURING A TRANSISTOR HAVING AN INSULATED GRID SEMICONDUCTOR STRUCTURE. |
| US6054771A (en) * | 1997-01-31 | 2000-04-25 | Nec Corporation | Interconnection system in a semiconductor device |
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