JPS57167676A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS57167676A JPS57167676A JP4133081A JP4133081A JPS57167676A JP S57167676 A JPS57167676 A JP S57167676A JP 4133081 A JP4133081 A JP 4133081A JP 4133081 A JP4133081 A JP 4133081A JP S57167676 A JPS57167676 A JP S57167676A
- Authority
- JP
- Japan
- Prior art keywords
- molybdenum silicide
- semiconductor device
- implanted
- ion
- interface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 abstract 3
- 229910021344 molybdenum silicide Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To maintain an almost constant contact resistance even when the temperature goes up for the subject semiconductor device by a method wherein, after a metal silicide electrode has been formed on a silicon substrate, the ion having the impurities of the same type as the substrate is implanted on the interface of the above electode. CONSTITUTION:For example, after a molybdenum silicide layer of 2,000A has been formed, phosphorus of 4X10<15>[cm<-2>] per dosage is ion-implanted at 150KeV from above a molybdenum silicide layer in the direction of interface A as shown by the arrows. When a contact section is formed as above, almost no fluctuations are made in the contact resistance in an annealing which will be performed subsequently. As a result, an excellent ohmic contact can be obtained between the molybdenum silicide and an N<+> silicon substrate 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4133081A JPS57167676A (en) | 1981-03-20 | 1981-03-20 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4133081A JPS57167676A (en) | 1981-03-20 | 1981-03-20 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57167676A true JPS57167676A (en) | 1982-10-15 |
Family
ID=12605501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4133081A Pending JPS57167676A (en) | 1981-03-20 | 1981-03-20 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57167676A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60211871A (en) * | 1984-04-05 | 1985-10-24 | Nec Corp | Semiconductor memory |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54128668A (en) * | 1978-03-30 | 1979-10-05 | Toshiba Corp | Manufacture for electronic component device |
| JPS55121667A (en) * | 1979-03-13 | 1980-09-18 | Seiko Epson Corp | Integrated circuit |
| JPS5669844A (en) * | 1979-11-10 | 1981-06-11 | Toshiba Corp | Manufacture of semiconductor device |
-
1981
- 1981-03-20 JP JP4133081A patent/JPS57167676A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54128668A (en) * | 1978-03-30 | 1979-10-05 | Toshiba Corp | Manufacture for electronic component device |
| JPS55121667A (en) * | 1979-03-13 | 1980-09-18 | Seiko Epson Corp | Integrated circuit |
| JPS5669844A (en) * | 1979-11-10 | 1981-06-11 | Toshiba Corp | Manufacture of semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60211871A (en) * | 1984-04-05 | 1985-10-24 | Nec Corp | Semiconductor memory |
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