JPS5732679A - Manufacture of schottky barrier diode - Google Patents
Manufacture of schottky barrier diodeInfo
- Publication number
- JPS5732679A JPS5732679A JP10751480A JP10751480A JPS5732679A JP S5732679 A JPS5732679 A JP S5732679A JP 10751480 A JP10751480 A JP 10751480A JP 10751480 A JP10751480 A JP 10751480A JP S5732679 A JPS5732679 A JP S5732679A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- manufacture
- film
- schottky barrier
- barrier diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To manufacture a Schottky barrier diode which does not lose its forward characteristics by forming a high resistivity semiconductor region by an ion implantation method on a part contacting with the edge of the barrier metallic layer of a semiconductor layer. CONSTITUTION:A metallic layer 6 is formed on a part exposed on an SiO2 film 2a and on the hole 3a of a silicon substrate 1, is then heat treated, and a barrier metallic layer 4 is formed. Then, the part on the film 2a of the layer 6 is removed. Further, B ions are injected from above the film 2a. To activate the B ions thus implanted to the periphery of the layer 4, it is heat treated after ion implantation to be activated, or it is activated at the time of heat treating when forming electrodes and wires to form a P<-> type or an N<-> type high resistivity semiconductor region 7 on the part contacted with the edge of the layer 4 of the substrate 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10751480A JPS5732679A (en) | 1980-08-05 | 1980-08-05 | Manufacture of schottky barrier diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10751480A JPS5732679A (en) | 1980-08-05 | 1980-08-05 | Manufacture of schottky barrier diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5732679A true JPS5732679A (en) | 1982-02-22 |
Family
ID=14461126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10751480A Pending JPS5732679A (en) | 1980-08-05 | 1980-08-05 | Manufacture of schottky barrier diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5732679A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105576044A (en) * | 2014-10-16 | 2016-05-11 | 北大方正集团有限公司 | Schottky diode and manufacturing method thereof |
-
1980
- 1980-08-05 JP JP10751480A patent/JPS5732679A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105576044A (en) * | 2014-10-16 | 2016-05-11 | 北大方正集团有限公司 | Schottky diode and manufacturing method thereof |
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