JPS5758325A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5758325A JPS5758325A JP13376480A JP13376480A JPS5758325A JP S5758325 A JPS5758325 A JP S5758325A JP 13376480 A JP13376480 A JP 13376480A JP 13376480 A JP13376480 A JP 13376480A JP S5758325 A JPS5758325 A JP S5758325A
- Authority
- JP
- Japan
- Prior art keywords
- energy rays
- substrate
- high energy
- semiconductor
- rays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 238000010438 heat treatment Methods 0.000 abstract 2
- 230000001678 irradiating effect Effects 0.000 abstract 2
- 230000002093 peripheral effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To fuse insulating part having a vertical internal peripheral surface effectively, by irradiating high energy rays from the slanted direction with respect to the surface of a semiconductor substrate to be treated. CONSTITUTION:As an example, the high energy rays 102 in a pulse form such as laser are irradiated to the semiconductor substrate 101 to be treated from a plurality of energy sources 103a, 103b,... At this time, the energy rays 102 are irradiated so that the rays are concentrated on one semiconductor region. After said heat treatment has been finished the heat treatment is performed to semiconductor element adjacent to said semiconductor element regions. By irradiating the high energy rays 102 from the slanted direction with respect to the surface of the substrate 101, the internal surface part of the insulating film of the opening in the substrate 101 is effectively fused. Therefore, thin parts are not caused in a metallic layer and the like which are extended over the insulating film deposited in said opening.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13376480A JPS5758325A (en) | 1980-09-26 | 1980-09-26 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13376480A JPS5758325A (en) | 1980-09-26 | 1980-09-26 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5758325A true JPS5758325A (en) | 1982-04-08 |
Family
ID=15112402
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13376480A Pending JPS5758325A (en) | 1980-09-26 | 1980-09-26 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5758325A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007029180A (en) * | 2005-07-22 | 2007-02-08 | Kato Kinzoku Kogyo Kk | Cooking device |
-
1980
- 1980-09-26 JP JP13376480A patent/JPS5758325A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007029180A (en) * | 2005-07-22 | 2007-02-08 | Kato Kinzoku Kogyo Kk | Cooking device |
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