JPS5758325A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5758325A
JPS5758325A JP13376480A JP13376480A JPS5758325A JP S5758325 A JPS5758325 A JP S5758325A JP 13376480 A JP13376480 A JP 13376480A JP 13376480 A JP13376480 A JP 13376480A JP S5758325 A JPS5758325 A JP S5758325A
Authority
JP
Japan
Prior art keywords
energy rays
substrate
high energy
semiconductor
rays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13376480A
Other languages
Japanese (ja)
Inventor
Hiroyuki Ikubo
Masashi Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13376480A priority Critical patent/JPS5758325A/en
Publication of JPS5758325A publication Critical patent/JPS5758325A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To fuse insulating part having a vertical internal peripheral surface effectively, by irradiating high energy rays from the slanted direction with respect to the surface of a semiconductor substrate to be treated. CONSTITUTION:As an example, the high energy rays 102 in a pulse form such as laser are irradiated to the semiconductor substrate 101 to be treated from a plurality of energy sources 103a, 103b,... At this time, the energy rays 102 are irradiated so that the rays are concentrated on one semiconductor region. After said heat treatment has been finished the heat treatment is performed to semiconductor element adjacent to said semiconductor element regions. By irradiating the high energy rays 102 from the slanted direction with respect to the surface of the substrate 101, the internal surface part of the insulating film of the opening in the substrate 101 is effectively fused. Therefore, thin parts are not caused in a metallic layer and the like which are extended over the insulating film deposited in said opening.
JP13376480A 1980-09-26 1980-09-26 Manufacture of semiconductor device Pending JPS5758325A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13376480A JPS5758325A (en) 1980-09-26 1980-09-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13376480A JPS5758325A (en) 1980-09-26 1980-09-26 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5758325A true JPS5758325A (en) 1982-04-08

Family

ID=15112402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13376480A Pending JPS5758325A (en) 1980-09-26 1980-09-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5758325A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007029180A (en) * 2005-07-22 2007-02-08 Kato Kinzoku Kogyo Kk Cooking device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007029180A (en) * 2005-07-22 2007-02-08 Kato Kinzoku Kogyo Kk Cooking device

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