JPS55165640A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS55165640A JPS55165640A JP7337979A JP7337979A JPS55165640A JP S55165640 A JPS55165640 A JP S55165640A JP 7337979 A JP7337979 A JP 7337979A JP 7337979 A JP7337979 A JP 7337979A JP S55165640 A JPS55165640 A JP S55165640A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- heat
- impurity layer
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 230000004913 activation Effects 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To perform efficient activation and attain good ohmic connection, by injecting ions into the surface of a semiconductor substrate to make an impurity layer, providing a wiring of Mo or the like and irradiating the reverse side with CO2 laser light or the like to simultaneously treat the impurity layer and the Mo film with heat. CONSTITUTION:Ions are injected into an Si substrate 3 to add an impurity 2. An Mo film 1 is coated. The reverse side of the substrate is irradiated with CO2 laser light 4 which almost penetrates the Si substrate. The energy of the light is absorbed near the boundary 5 between the Mo and the Si to activate the added atoms and treat the Mo film with heat. According to this method, only the impurity layer absorbs the energy of the light and the activation ratio is almost 100%. The Mo is well treated with heat near the boundary on the Si and unlikely to be affected by an atmosphere during the treatment. Therefore, good ohmic connection is attained. Mo and W are advantageous because their melting points are high and they are therefore not sublimed or evaporated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7337979A JPS55165640A (en) | 1979-06-11 | 1979-06-11 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7337979A JPS55165640A (en) | 1979-06-11 | 1979-06-11 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55165640A true JPS55165640A (en) | 1980-12-24 |
JPS6250972B2 JPS6250972B2 (en) | 1987-10-28 |
Family
ID=13516485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7337979A Granted JPS55165640A (en) | 1979-06-11 | 1979-06-11 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55165640A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH027422A (en) * | 1988-06-24 | 1990-01-11 | Ricoh Co Ltd | High-temperature heat treatment by laser |
JP2005183604A (en) * | 2003-12-18 | 2005-07-07 | Semiconductor Leading Edge Technologies Inc | Method for heat treatment of semiconductor device |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH028485U (en) * | 1988-06-29 | 1990-01-19 | ||
JPH0250363U (en) * | 1988-10-03 | 1990-04-09 | ||
JPH0250362U (en) * | 1988-10-03 | 1990-04-09 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4825816A (en) * | 1971-08-11 | 1973-04-04 |
-
1979
- 1979-06-11 JP JP7337979A patent/JPS55165640A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4825816A (en) * | 1971-08-11 | 1973-04-04 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH027422A (en) * | 1988-06-24 | 1990-01-11 | Ricoh Co Ltd | High-temperature heat treatment by laser |
JP2005183604A (en) * | 2003-12-18 | 2005-07-07 | Semiconductor Leading Edge Technologies Inc | Method for heat treatment of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6250972B2 (en) | 1987-10-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5618430A (en) | Manufacture of semiconductor element | |
JPS55165640A (en) | Manufacture of semiconductor device | |
JPS5731144A (en) | Mamufacture of semiconductor device | |
JPS5635434A (en) | Manufacturing of semiconductor device | |
JPS55111170A (en) | Method of manufacturing semiconductor device | |
JPS5737854A (en) | Semiconductor device | |
JPS57130435A (en) | Annealing method of matter by light beam | |
JPS5710939A (en) | Manufacture of semiconductor device | |
JPS56110265A (en) | Semiconductor device and its manufacture | |
JPS5270762A (en) | Electrode formation method of semiconductor element | |
JPS55111128A (en) | Manufacturing method of semiconductor device | |
JPS5683935A (en) | Formation of metal layer | |
JPS5681935A (en) | Semiconductor device and its manufacture | |
JPS55162235A (en) | Forming nitride film | |
JPS56110226A (en) | Forming method of impurity doped region in semiconductor substrate | |
JPS57192222A (en) | Treatment of electromagnetic steel sheet | |
JPS522273A (en) | Method of treating semiconductor substrate | |
JPS56124236A (en) | Method for selective thermal oxidized film formation on semiconductor substrate | |
JPS5758325A (en) | Manufacture of semiconductor device | |
JPS5627922A (en) | Manufacture of semiconductor device | |
JPS5644371A (en) | Manufacture of field winding for motor | |
JPS57198958A (en) | Solar heat selective absorption film | |
JPS57112013A (en) | Manufacture of semiconductor device | |
JPS6484719A (en) | Manufacture of semiconductor device | |
JPS5730339A (en) | Laser annealing method |