JPS56124236A - Method for selective thermal oxidized film formation on semiconductor substrate - Google Patents

Method for selective thermal oxidized film formation on semiconductor substrate

Info

Publication number
JPS56124236A
JPS56124236A JP2642580A JP2642580A JPS56124236A JP S56124236 A JPS56124236 A JP S56124236A JP 2642580 A JP2642580 A JP 2642580A JP 2642580 A JP2642580 A JP 2642580A JP S56124236 A JPS56124236 A JP S56124236A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
selectively
oxidized film
film formation
selective thermal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2642580A
Other languages
Japanese (ja)
Inventor
Kazuto Sakuma
Kohei Ebara
Masanobu Doken
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2642580A priority Critical patent/JPS56124236A/en
Publication of JPS56124236A publication Critical patent/JPS56124236A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment

Abstract

PURPOSE:To obtain the SiO2 film selectively on the irradiation region only for the subject semiconductor substrate by a method wherein a laser beam is irradiated on an Si substrate in the gaseous atmosphere containing an O2. CONSTITUTION:The Si substrate 11 is placed on a cooling plate 12 and the CO2 laser beam 14 is irradiated selectively in the gaseous atmosphere containing the O2. The irradiation may be performed continuously or intermittently. A spot of about 20mum is suitable and the irradiation region is heated up to approximately 1,600 deg.C or above. At this time, an oxidized film 15 can be formed selectively and in a short time as well when the gaseous atmosphere is maintained at 1 atmosphere or above. Through this constitution, the SiO2 can be selectively formed by performing a partial heating without heating the impurity layer 16.
JP2642580A 1980-03-03 1980-03-03 Method for selective thermal oxidized film formation on semiconductor substrate Pending JPS56124236A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2642580A JPS56124236A (en) 1980-03-03 1980-03-03 Method for selective thermal oxidized film formation on semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2642580A JPS56124236A (en) 1980-03-03 1980-03-03 Method for selective thermal oxidized film formation on semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS56124236A true JPS56124236A (en) 1981-09-29

Family

ID=12193161

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2642580A Pending JPS56124236A (en) 1980-03-03 1980-03-03 Method for selective thermal oxidized film formation on semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS56124236A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0196155A2 (en) * 1985-03-23 1986-10-01 Stc Plc Method of forming an oxide film on a semiconductor substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5235596A (en) * 1975-09-12 1977-03-18 Hitachi Ltd Burglar watch system
JPS5421172A (en) * 1977-07-18 1979-02-17 Nec Corp Manufacture for semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5235596A (en) * 1975-09-12 1977-03-18 Hitachi Ltd Burglar watch system
JPS5421172A (en) * 1977-07-18 1979-02-17 Nec Corp Manufacture for semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0196155A2 (en) * 1985-03-23 1986-10-01 Stc Plc Method of forming an oxide film on a semiconductor substrate

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