JPS6428809A - Laser annealing device - Google Patents

Laser annealing device

Info

Publication number
JPS6428809A
JPS6428809A JP18497987A JP18497987A JPS6428809A JP S6428809 A JPS6428809 A JP S6428809A JP 18497987 A JP18497987 A JP 18497987A JP 18497987 A JP18497987 A JP 18497987A JP S6428809 A JPS6428809 A JP S6428809A
Authority
JP
Japan
Prior art keywords
wafer
laser beam
cover
semiconductor wafer
annealing device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18497987A
Other languages
Japanese (ja)
Inventor
Michihiko Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18497987A priority Critical patent/JPS6428809A/en
Publication of JPS6428809A publication Critical patent/JPS6428809A/en
Pending legal-status Critical Current

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  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To make the temperature distribution uniform and to prevent a semiconductor wafer from contamination caused by a wind by a method wherein a transparent cover of a very simple structure is provided, and it is used for covering the semiconductor wafer. CONSTITUTION:A semiconductor wafer 2 is placed on a laser annealing device, and a cover 3 is provided covering an attracted wafer stage 1. The laser beam 5 such as a continuous oscillating type argon laser beam, for example, is condensed by a lens 4, it is transmitted through a cover 3, which transmits the laser beam 5, and projected on the wafer 2. The cover 3 is formed with material such as transparent quartz, for example, which transmits the laser beam 5. As a result, the surface temperature of the wafer 2 can be made uniform all the more. Also, the wafer 2 is not contaminated by the wind.
JP18497987A 1987-07-23 1987-07-23 Laser annealing device Pending JPS6428809A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18497987A JPS6428809A (en) 1987-07-23 1987-07-23 Laser annealing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18497987A JPS6428809A (en) 1987-07-23 1987-07-23 Laser annealing device

Publications (1)

Publication Number Publication Date
JPS6428809A true JPS6428809A (en) 1989-01-31

Family

ID=16162678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18497987A Pending JPS6428809A (en) 1987-07-23 1987-07-23 Laser annealing device

Country Status (1)

Country Link
JP (1) JPS6428809A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0360015A (en) * 1989-07-27 1991-03-15 Sanyo Electric Co Ltd Laser annealing device
US6588232B1 (en) 1998-01-13 2003-07-08 Kabushiki Kaisha Toshiba Treatment device, laser annealing device, manufacturing apparatus, and manufacturing apparatus for flat display device
JP2007288128A (en) * 2006-03-23 2007-11-01 Ihi Corp Laser annealing device
WO2008152873A1 (en) * 2007-06-12 2008-12-18 The Japan Steel Works, Ltd. Laser processing device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0360015A (en) * 1989-07-27 1991-03-15 Sanyo Electric Co Ltd Laser annealing device
US6588232B1 (en) 1998-01-13 2003-07-08 Kabushiki Kaisha Toshiba Treatment device, laser annealing device, manufacturing apparatus, and manufacturing apparatus for flat display device
JP2007288128A (en) * 2006-03-23 2007-11-01 Ihi Corp Laser annealing device
WO2008152873A1 (en) * 2007-06-12 2008-12-18 The Japan Steel Works, Ltd. Laser processing device
JP2008311249A (en) * 2007-06-12 2008-12-25 Japan Steel Works Ltd:The Laser processing apparatus

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