JPS5731146A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5731146A
JPS5731146A JP10590680A JP10590680A JPS5731146A JP S5731146 A JPS5731146 A JP S5731146A JP 10590680 A JP10590680 A JP 10590680A JP 10590680 A JP10590680 A JP 10590680A JP S5731146 A JPS5731146 A JP S5731146A
Authority
JP
Japan
Prior art keywords
annealing
quartz plate
constitution
curved surface
laser light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10590680A
Other languages
Japanese (ja)
Inventor
Yasuo Baba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10590680A priority Critical patent/JPS5731146A/en
Publication of JPS5731146A publication Critical patent/JPS5731146A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To perform high accuracy laser annealing, by using a quartz plate mask partially having a curved surface. CONSTITUTION:A convex lens-shaped curved surface 22 is provided at the central part of a quartz plate 21 having a thickness of about 0.5mm.. With laser light irradiated at an Si substrate 23 coated with poly Si through the quartz plate 21, the laser light is refracted to selectively perform annealing. A laser annealing mask provided with a concave lens-shaped hollow may also be used. By said constitution, annealing can be applied to a desired place with better accuracy than a conventional metal mask method, and a highly reliable device can be obtained.
JP10590680A 1980-07-31 1980-07-31 Manufacture of semiconductor device Pending JPS5731146A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10590680A JPS5731146A (en) 1980-07-31 1980-07-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10590680A JPS5731146A (en) 1980-07-31 1980-07-31 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5731146A true JPS5731146A (en) 1982-02-19

Family

ID=14419908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10590680A Pending JPS5731146A (en) 1980-07-31 1980-07-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5731146A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5540183A (en) * 1993-03-16 1996-07-30 Mitsubishi Denki Kabushiki Kaisha Zone-melting recrystallization of semiconductor materials

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5540183A (en) * 1993-03-16 1996-07-30 Mitsubishi Denki Kabushiki Kaisha Zone-melting recrystallization of semiconductor materials

Similar Documents

Publication Publication Date Title
JPS5731146A (en) Manufacture of semiconductor device
JPS56130914A (en) Manufacture of semiconductor device
JPS5726467A (en) Manufacture of semiconductor device
JPS6428809A (en) Laser annealing device
JPS5688319A (en) Method for forming film pattern
GB2160360A (en) Method of fabricating solar cells
JPS6424425A (en) Formation of tapered pattern
JPS5797630A (en) Manufacture of semiconductor device
JPS57185437A (en) Production of x-ray exposure mask
JPS5556676A (en) Manufacture of semiconductor light-emitting device
JPS57118681A (en) Manufacture of semiconductor light emitting diode
JPS5596681A (en) Method of fabricating semiconductor device
JPS5779624A (en) Manufacture of semiconductor device
JPS56133833A (en) Shaping of thin layer
JPS57103418A (en) Production for quartz oscillator
JPS5666056A (en) Manufacture of semiconductor device
JPS56130917A (en) Manufacture of semiconductor device
JPS56144536A (en) Pattern formation and p-n junction formation
JPS5730340A (en) Manufacture of mask for semiconductor processing
JPS5750431A (en) Forming method for minute pattern
JPS55158636A (en) Photo-mask for semiconductor device
JPS56115528A (en) Manufacture of semiconductor device
JPS5546753A (en) Pattern formation method using photosensitive chalcogenide layer
JPS5398786A (en) Manufacture for semiconductor device
JPS57211229A (en) Alignment of wafer