GB2160360A - Method of fabricating solar cells - Google Patents

Method of fabricating solar cells

Info

Publication number
GB2160360A
GB2160360A GB08515900A GB8515900A GB2160360A GB 2160360 A GB2160360 A GB 2160360A GB 08515900 A GB08515900 A GB 08515900A GB 8515900 A GB8515900 A GB 8515900A GB 2160360 A GB2160360 A GB 2160360A
Authority
GB
United Kingdom
Prior art keywords
front surface
mask
solar cells
fabricating solar
altered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB08515900A
Other versions
GB8515900D0 (en
GB2160360B (en
Inventor
Ronald C Gonsiorawski
Doughlas A Yates
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schott Solar CSP Inc
Original Assignee
Mobil Solar Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/681,001 external-priority patent/US4612698A/en
Application filed by Mobil Solar Energy Corp filed Critical Mobil Solar Energy Corp
Publication of GB8515900D0 publication Critical patent/GB8515900D0/en
Publication of GB2160360A publication Critical patent/GB2160360A/en
Application granted granted Critical
Publication of GB2160360B publication Critical patent/GB2160360B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Chemically Coating (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

A solar cell fabrication procedure which is characterized by (a) forming a front surface mask (12) in the configuration of the front surface electrodes, (b) a passivation step which, inter alia, results in the formation of an altered silicon substrate surface layer (18) in the areas not covered by the front surface mask, (c) removal of the front surface mask (12), and (d) the use of the altered surface layer (18) as a plating mask for subsequent metallization steps.
GB08515900A 1983-12-19 1984-12-14 Method of fabricating solar cells Expired GB2160360B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US56329283A 1983-12-19 1983-12-19
US66697284A 1984-10-31 1984-10-31
US06/681,001 US4612698A (en) 1984-10-31 1984-12-13 Method of fabricating solar cells
PCT/US1984/002064 WO1985002942A1 (en) 1983-12-19 1984-12-14 Method of fabricating solar cells

Publications (3)

Publication Number Publication Date
GB8515900D0 GB8515900D0 (en) 1985-07-24
GB2160360A true GB2160360A (en) 1985-12-18
GB2160360B GB2160360B (en) 1987-09-16

Family

ID=27415916

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08515900A Expired GB2160360B (en) 1983-12-19 1984-12-14 Method of fabricating solar cells

Country Status (8)

Country Link
EP (1) EP0168431A4 (en)
AU (1) AU574431B2 (en)
CH (1) CH670335A5 (en)
DE (1) DE3490600T1 (en)
GB (1) GB2160360B (en)
NL (1) NL8420336A (en)
SE (1) SE456625B (en)
WO (1) WO1985002942A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2183090B (en) * 1985-10-07 1989-09-13 Canon Kk Method for selective formation of deposited film

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU574761B2 (en) * 1983-12-19 1988-07-14 Mobil Solar Energy Corp. Method of fabricating solar cells
US4650695A (en) * 1985-05-13 1987-03-17 Mobil Solar Energy Corporation Method of fabricating solar cells
EP1895545B1 (en) 2006-08-31 2014-04-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3805376A (en) * 1971-12-02 1974-04-23 Bell Telephone Labor Inc Beam-lead electroluminescent diodes and method of manufacture
US4086102A (en) * 1976-12-13 1978-04-25 King William J Inexpensive solar cell and method therefor
US4224084A (en) * 1979-04-16 1980-09-23 Rca Corporation Method and structure for passivating a semiconductor device
US4322253A (en) * 1980-04-30 1982-03-30 Rca Corporation Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment
US4472458A (en) * 1982-01-27 1984-09-18 Bayer Aktiengesellschaft Process for the production of metallized semiconductors

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4152824A (en) * 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells
NL7800583A (en) * 1978-01-18 1979-07-20 Philips Nv PROCESS FOR THE MANUFACTURE OF A DEVICE AND DEVICE MANUFACTURED USING THE PROCESS.
AU546534B2 (en) * 1981-10-27 1985-09-05 Mobil Solar Energy Corp. Coating silicon with nickel by electroless-plating
AU574761B2 (en) * 1983-12-19 1988-07-14 Mobil Solar Energy Corp. Method of fabricating solar cells

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3805376A (en) * 1971-12-02 1974-04-23 Bell Telephone Labor Inc Beam-lead electroluminescent diodes and method of manufacture
US4086102A (en) * 1976-12-13 1978-04-25 King William J Inexpensive solar cell and method therefor
US4224084A (en) * 1979-04-16 1980-09-23 Rca Corporation Method and structure for passivating a semiconductor device
US4322253A (en) * 1980-04-30 1982-03-30 Rca Corporation Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment
US4472458A (en) * 1982-01-27 1984-09-18 Bayer Aktiengesellschaft Process for the production of metallized semiconductors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2183090B (en) * 1985-10-07 1989-09-13 Canon Kk Method for selective formation of deposited film

Also Published As

Publication number Publication date
CH670335A5 (en) 1989-05-31
SE456625B (en) 1988-10-17
AU3889985A (en) 1985-07-12
EP0168431A4 (en) 1989-01-19
SE8503834D0 (en) 1985-08-16
AU574431B2 (en) 1988-07-07
GB8515900D0 (en) 1985-07-24
EP0168431A1 (en) 1986-01-22
SE8503834L (en) 1985-08-16
NL8420336A (en) 1985-11-01
DE3490600T1 (en) 1985-11-28
GB2160360B (en) 1987-09-16
WO1985002942A1 (en) 1985-07-04

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee