JPS5529181A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5529181A JPS5529181A JP10325378A JP10325378A JPS5529181A JP S5529181 A JPS5529181 A JP S5529181A JP 10325378 A JP10325378 A JP 10325378A JP 10325378 A JP10325378 A JP 10325378A JP S5529181 A JPS5529181 A JP S5529181A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- film
- covered
- projected
- projected electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Abstract
PURPOSE: To increase the attachment strength of an electrode while sufficiently protecting the surface of a substrate by employing a procedure wherein when providing a projected electrode on a semiconductor substrate on which a given set of elements are formed, the whole surface including the projected electrode is covered with a fluorine resin and only the upper surface of the electrode is exposed.
CONSTITUTION: The order of the step of forming a projected electrode and the step of coating a fluorine resin film is reversed. An Al wiring 13 is first formed through a SiO2 film 12 on a semiconductor substrate 11 on which a given set of elements have been provided, and the entire surface is covered with a PSG film 14 by the CVD process. Then an opening is formed at the portion where the projected electrode has been provide and Cr and Cu are continuously vapor-deposited to provide an intermediate metal layer 15. By masking with a photoresist, a Cu electrode 16 is formed by electric plating. Thereafter, the entire surface is covered with a film 17 consisting of a fluorimated ethylene-propylene copolymer, and by providing an opening in an electrode region 16 by the O2 plasma method, the surface of the electrode 16 is exposed. This permits sufficient protection of the surface of the layer 14, and since the attachment force of the electrode 16 is independent from the film 17, it is strengthened.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10325378A JPS5529181A (en) | 1978-08-24 | 1978-08-24 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10325378A JPS5529181A (en) | 1978-08-24 | 1978-08-24 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5529181A true JPS5529181A (en) | 1980-03-01 |
Family
ID=14349272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10325378A Pending JPS5529181A (en) | 1978-08-24 | 1978-08-24 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5529181A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57200591U (en) * | 1981-06-12 | 1982-12-20 | ||
JPS60170246A (en) * | 1984-02-15 | 1985-09-03 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPS62173740A (en) * | 1986-01-27 | 1987-07-30 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
JPS63245942A (en) * | 1987-03-31 | 1988-10-13 | Nec Corp | Semiconductor device |
US5316974A (en) * | 1988-12-19 | 1994-05-31 | Texas Instruments Incorporated | Integrated circuit copper metallization process using a lift-off seed layer and a thick-plated conductor layer |
US6229209B1 (en) | 1995-02-23 | 2001-05-08 | Matsushita Electric Industrial Co., Ltd. | Chip carrier |
-
1978
- 1978-08-24 JP JP10325378A patent/JPS5529181A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57200591U (en) * | 1981-06-12 | 1982-12-20 | ||
JPS6217509Y2 (en) * | 1981-06-12 | 1987-05-06 | ||
JPS60170246A (en) * | 1984-02-15 | 1985-09-03 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPS62173740A (en) * | 1986-01-27 | 1987-07-30 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
JPS63245942A (en) * | 1987-03-31 | 1988-10-13 | Nec Corp | Semiconductor device |
US5316974A (en) * | 1988-12-19 | 1994-05-31 | Texas Instruments Incorporated | Integrated circuit copper metallization process using a lift-off seed layer and a thick-plated conductor layer |
US6229209B1 (en) | 1995-02-23 | 2001-05-08 | Matsushita Electric Industrial Co., Ltd. | Chip carrier |
US6365499B1 (en) | 1995-02-23 | 2002-04-02 | Matsushita Electric Industrial Co., Ltd. | Chip carrier and method of manufacturing and mounting the same |
US6372547B2 (en) | 1995-02-23 | 2002-04-16 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing electronic device with resin layer between chip carrier and circuit wiring board |
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