JPS5730345A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5730345A JPS5730345A JP10531180A JP10531180A JPS5730345A JP S5730345 A JPS5730345 A JP S5730345A JP 10531180 A JP10531180 A JP 10531180A JP 10531180 A JP10531180 A JP 10531180A JP S5730345 A JPS5730345 A JP S5730345A
- Authority
- JP
- Japan
- Prior art keywords
- metal layer
- pattern
- whole surface
- semiconductor substrate
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000002184 metal Substances 0.000 abstract 5
- 229910052751 metal Inorganic materials 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 5
- 238000000034 method Methods 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
Landscapes
- Liquid Crystal (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Non-Volatile Memory (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
PURPOSE:To prevent the external light to come into the inner part of a semiconductor substrate by a method wherein an overetching is performed on an insulating film, using the Al wiring pattern selectively formed on the surface of the semiconductor substrate, and then a metal layer is coated on the whole surface of the substrate. CONSTITUTION:The insulating film 19 is formed on the semiconductor substrate 18 and successively an Al layer 20 is formed. Then, a desired pattern is formed using a resist 21, which is sensitive to an electron beam, light, X-rays and the like, and the unnecessary Al is removed in accordance with the said pattern. When a metal 22 such as Al, Cr, Au, Ti, Ni, and the like is evaporated on the whole surface after an overetching has been performed on the insulating layer 19 in accordance with the above pattern, breaking of wire is generated at the stepped section of the metal layer due to the big difference in level at the pattern edge section and a structure, the whole surface of which is covered by the metal layer, can be obtained without having a short-circuit between wirings. Through these procedures, as the whole surface of the substrate is covered by the metal layer of a high light absorbing factor, the incidence of external light can be prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10531180A JPS5730345A (en) | 1980-07-31 | 1980-07-31 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10531180A JPS5730345A (en) | 1980-07-31 | 1980-07-31 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5730345A true JPS5730345A (en) | 1982-02-18 |
Family
ID=14404151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10531180A Pending JPS5730345A (en) | 1980-07-31 | 1980-07-31 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5730345A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59121082A (en) * | 1982-12-22 | 1984-07-12 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Semiconductor integrated display and manufacture thereof |
| JPS63239842A (en) * | 1986-11-05 | 1988-10-05 | Nec Corp | Manufacture of semiconductor device |
| US4818712A (en) * | 1987-10-13 | 1989-04-04 | Northrop Corporation | Aluminum liftoff masking process and product |
| US7285817B2 (en) | 2004-09-10 | 2007-10-23 | Seiko Epson Corporation | Semiconductor device |
| US20090039515A1 (en) * | 2007-08-10 | 2009-02-12 | International Business Machines Corporation | Ionizing radiation blocking in ic chip to reduce soft errors |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5538075A (en) * | 1978-09-12 | 1980-03-17 | Fujitsu Ltd | Wiring |
-
1980
- 1980-07-31 JP JP10531180A patent/JPS5730345A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5538075A (en) * | 1978-09-12 | 1980-03-17 | Fujitsu Ltd | Wiring |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59121082A (en) * | 1982-12-22 | 1984-07-12 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Semiconductor integrated display and manufacture thereof |
| JPS63239842A (en) * | 1986-11-05 | 1988-10-05 | Nec Corp | Manufacture of semiconductor device |
| US4818712A (en) * | 1987-10-13 | 1989-04-04 | Northrop Corporation | Aluminum liftoff masking process and product |
| US7285817B2 (en) | 2004-09-10 | 2007-10-23 | Seiko Epson Corporation | Semiconductor device |
| US20090039515A1 (en) * | 2007-08-10 | 2009-02-12 | International Business Machines Corporation | Ionizing radiation blocking in ic chip to reduce soft errors |
| US8999764B2 (en) * | 2007-08-10 | 2015-04-07 | International Business Machines Corporation | Ionizing radiation blocking in IC chip to reduce soft errors |
| US10784200B2 (en) | 2007-08-10 | 2020-09-22 | International Business Machines Corporation | Ionizing radiation blocking in IC chip to reduce soft errors |
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