JPS5599721A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS5599721A JPS5599721A JP798679A JP798679A JPS5599721A JP S5599721 A JPS5599721 A JP S5599721A JP 798679 A JP798679 A JP 798679A JP 798679 A JP798679 A JP 798679A JP S5599721 A JPS5599721 A JP S5599721A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion layer
- aluminium
- irradiating
- metal
- laser light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To execute diffusion simply and under good controllability by coating metal on a silicon substrate and irradiating laser light from above this metal layer to diffuse metal into the substrate.
CONSTITUTION: On a region to make a diffusion layer on a silicon substrate 1, an opening of an insulating film 2 is formed and then aluminium 3 is coated. If laser light 4 is irradiated next, an aluminium diffusion layer 5 is formed. Removing the aluminium remaining on the surface next, a diffusion layer is formed. By selecting irradiating energy density or irradiating time appropriately at this time, the depth of a diffusion layer can be controlled freely.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP798679A JPS5599721A (en) | 1979-01-25 | 1979-01-25 | Preparation of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP798679A JPS5599721A (en) | 1979-01-25 | 1979-01-25 | Preparation of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5599721A true JPS5599721A (en) | 1980-07-30 |
Family
ID=11680742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP798679A Pending JPS5599721A (en) | 1979-01-25 | 1979-01-25 | Preparation of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5599721A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015179712A (en) * | 2014-03-19 | 2015-10-08 | 新電元工業株式会社 | Manufacturing method of mesa type semiconductor device, and mesa type semiconductor device |
| JP2016157911A (en) * | 2015-02-25 | 2016-09-01 | 国立大学法人九州大学 | Device for doping impurity, method for doping impurity, and method for manufacturing semiconductor element |
-
1979
- 1979-01-25 JP JP798679A patent/JPS5599721A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015179712A (en) * | 2014-03-19 | 2015-10-08 | 新電元工業株式会社 | Manufacturing method of mesa type semiconductor device, and mesa type semiconductor device |
| JP2016157911A (en) * | 2015-02-25 | 2016-09-01 | 国立大学法人九州大学 | Device for doping impurity, method for doping impurity, and method for manufacturing semiconductor element |
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