JPS5378777A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5378777A
JPS5378777A JP15530776A JP15530776A JPS5378777A JP S5378777 A JPS5378777 A JP S5378777A JP 15530776 A JP15530776 A JP 15530776A JP 15530776 A JP15530776 A JP 15530776A JP S5378777 A JPS5378777 A JP S5378777A
Authority
JP
Japan
Prior art keywords
film layer
make
semiconductor device
transparent
exactitute
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15530776A
Other languages
Japanese (ja)
Other versions
JPS5646252B2 (en
Inventor
Nobuo Sasaki
Motoo Nakano
Nobuo Niwayama
Teruo Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15530776A priority Critical patent/JPS5378777A/en
Publication of JPS5378777A publication Critical patent/JPS5378777A/en
Publication of JPS5646252B2 publication Critical patent/JPS5646252B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To make it possible to make the opening with good exactitute, by preventing transmission of light ray at the time of making photo process, leaving the semiconductor film layer by the chemical gas phase growth method, when the pattern for matching position is arranged on the transparent or semi-transparent base plate and the zone of film layer.
COPYRIGHT: (C)1978,JPO&Japio
JP15530776A 1976-12-23 1976-12-23 Semiconductor device Granted JPS5378777A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15530776A JPS5378777A (en) 1976-12-23 1976-12-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15530776A JPS5378777A (en) 1976-12-23 1976-12-23 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5378777A true JPS5378777A (en) 1978-07-12
JPS5646252B2 JPS5646252B2 (en) 1981-10-31

Family

ID=15603029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15530776A Granted JPS5378777A (en) 1976-12-23 1976-12-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5378777A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007081345A (en) * 2005-09-16 2007-03-29 Fujitsu Ltd Semiconductor device and its manufacturing method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58112107A (en) * 1981-12-25 1983-07-04 Tokyo Sokuhan Kk Table moving in direction of orthogonal coordinates

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50128470A (en) * 1974-03-27 1975-10-09

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50128470A (en) * 1974-03-27 1975-10-09

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007081345A (en) * 2005-09-16 2007-03-29 Fujitsu Ltd Semiconductor device and its manufacturing method

Also Published As

Publication number Publication date
JPS5646252B2 (en) 1981-10-31

Similar Documents

Publication Publication Date Title
JPS53108390A (en) Semiconductor device and its manufacture
JPS523583A (en) Crystal film forming process
JPS5320767A (en) X-ray mask supporting underlayer and its production
JPS5421172A (en) Manufacture for semiconductor device
JPS5378777A (en) Semiconductor device
JPS53108389A (en) Manufacture for semiconductor device
JPS5247673A (en) Process for production of silicon crystal film
JPS5236468A (en) Shallow diffusion method
JPS53125761A (en) Manufacture for binary compound semiconductor thin film
JPS5432970A (en) Appreciating method for semiconductor device
JPS5383588A (en) Manufacture of substrate for semiconductor light emitting device
JPS54866A (en) Molecular beam crystal growing device
JPS5360177A (en) Photo mask
JPS52153373A (en) Preparation of semiconductor device
JPS5421272A (en) Metal photo mask
JPS5326681A (en) Manufact ure of semiconductor device
JPS532071A (en) Manufacture of semiconductor device
JPS5377168A (en) Production of semiconductor device
JPS533168A (en) Semiconductor evaporating apparatus
JPS5286076A (en) Pattern formation of semiconductor element on diazo plate
JPS53123089A (en) Production of semiconductor device
JPS543470A (en) Etching method
JPS5288276A (en) Liquid-phase epitaxial growth
JPS52155058A (en) Film formation method
JPS5377180A (en) Semiconductor device and its production