JPS5383588A - Manufacture of substrate for semiconductor light emitting device - Google Patents

Manufacture of substrate for semiconductor light emitting device

Info

Publication number
JPS5383588A
JPS5383588A JP15814276A JP15814276A JPS5383588A JP S5383588 A JPS5383588 A JP S5383588A JP 15814276 A JP15814276 A JP 15814276A JP 15814276 A JP15814276 A JP 15814276A JP S5383588 A JPS5383588 A JP S5383588A
Authority
JP
Japan
Prior art keywords
substrate
light emitting
emitting device
manufacture
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15814276A
Other languages
Japanese (ja)
Inventor
Shinobu Fukunaga
Masahiko Yasuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15814276A priority Critical patent/JPS5383588A/en
Publication of JPS5383588A publication Critical patent/JPS5383588A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To lower the reaction temperature and to obtain a large-caliber light emitting device substrate, by epitaxial-growing the SiC single crystal film on the substrate single crystal featuring a grid constant close to the grid constant of the SiC single crystal.
COPYRIGHT: (C)1978,JPO&Japio
JP15814276A 1976-12-29 1976-12-29 Manufacture of substrate for semiconductor light emitting device Pending JPS5383588A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15814276A JPS5383588A (en) 1976-12-29 1976-12-29 Manufacture of substrate for semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15814276A JPS5383588A (en) 1976-12-29 1976-12-29 Manufacture of substrate for semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS5383588A true JPS5383588A (en) 1978-07-24

Family

ID=15665175

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15814276A Pending JPS5383588A (en) 1976-12-29 1976-12-29 Manufacture of substrate for semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS5383588A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58121690A (en) * 1982-01-12 1983-07-20 Sanyo Electric Co Ltd Sic light emitting diode
JPS59224099A (en) * 1983-06-01 1984-12-15 三菱電機株式会社 Earthquake operation type emergency lamp
JP2014103363A (en) * 2012-11-22 2014-06-05 Sumitomo Electric Ind Ltd Silicon carbide semiconductor substrate manufacturing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58121690A (en) * 1982-01-12 1983-07-20 Sanyo Electric Co Ltd Sic light emitting diode
JPS59224099A (en) * 1983-06-01 1984-12-15 三菱電機株式会社 Earthquake operation type emergency lamp
JP2014103363A (en) * 2012-11-22 2014-06-05 Sumitomo Electric Ind Ltd Silicon carbide semiconductor substrate manufacturing method

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