JPS5383588A - Manufacture of substrate for semiconductor light emitting device - Google Patents
Manufacture of substrate for semiconductor light emitting deviceInfo
- Publication number
- JPS5383588A JPS5383588A JP15814276A JP15814276A JPS5383588A JP S5383588 A JPS5383588 A JP S5383588A JP 15814276 A JP15814276 A JP 15814276A JP 15814276 A JP15814276 A JP 15814276A JP S5383588 A JPS5383588 A JP S5383588A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- light emitting
- emitting device
- manufacture
- semiconductor light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE: To lower the reaction temperature and to obtain a large-caliber light emitting device substrate, by epitaxial-growing the SiC single crystal film on the substrate single crystal featuring a grid constant close to the grid constant of the SiC single crystal.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15814276A JPS5383588A (en) | 1976-12-29 | 1976-12-29 | Manufacture of substrate for semiconductor light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15814276A JPS5383588A (en) | 1976-12-29 | 1976-12-29 | Manufacture of substrate for semiconductor light emitting device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5383588A true JPS5383588A (en) | 1978-07-24 |
Family
ID=15665175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15814276A Pending JPS5383588A (en) | 1976-12-29 | 1976-12-29 | Manufacture of substrate for semiconductor light emitting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5383588A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58121690A (en) * | 1982-01-12 | 1983-07-20 | Sanyo Electric Co Ltd | Sic light emitting diode |
JPS59224099A (en) * | 1983-06-01 | 1984-12-15 | 三菱電機株式会社 | Earthquake operation type emergency lamp |
JP2014103363A (en) * | 2012-11-22 | 2014-06-05 | Sumitomo Electric Ind Ltd | Silicon carbide semiconductor substrate manufacturing method |
-
1976
- 1976-12-29 JP JP15814276A patent/JPS5383588A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58121690A (en) * | 1982-01-12 | 1983-07-20 | Sanyo Electric Co Ltd | Sic light emitting diode |
JPS59224099A (en) * | 1983-06-01 | 1984-12-15 | 三菱電機株式会社 | Earthquake operation type emergency lamp |
JP2014103363A (en) * | 2012-11-22 | 2014-06-05 | Sumitomo Electric Ind Ltd | Silicon carbide semiconductor substrate manufacturing method |
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