JPS58121690A - Sic light emitting diode - Google Patents
Sic light emitting diodeInfo
- Publication number
- JPS58121690A JPS58121690A JP57003574A JP357482A JPS58121690A JP S58121690 A JPS58121690 A JP S58121690A JP 57003574 A JP57003574 A JP 57003574A JP 357482 A JP357482 A JP 357482A JP S58121690 A JPS58121690 A JP S58121690A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- light emitting
- layers
- type sic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012535 impurity Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 abstract description 12
- 229910052733 gallium Inorganic materials 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 16
- 229910010271 silicon carbide Inorganic materials 0.000 description 16
- 239000003086 colorant Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910018509 Al—N Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241001062872 Cleyera japonica Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
- H01L33/343—Materials of the light emitting region containing only elements of Group IV of the Periodic Table characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
- H01L33/0016—Devices characterised by their operation having p-n or hi-lo junctions having at least two p-n junctions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は５ＩＣ（炭化ケイ素）発光ダイオードに関する
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a 5IC (silicon carbide) light emitting diode.
ＳｉＣは間接遷移型のＷ−Ｗ化合物であり、種々の結晶
構造が存在し、その禁止帯幅は２．３９〜５．５３６Ｖ
４で多岐にわたる。従って赤色から青色まで全ての可視
光を発光させることが可能である。SiC is an indirect transition type W-W compound, and there are various crystal structures, and its forbidden band width is 2.39 to 5.536V.
4 and wide variety. Therefore, it is possible to emit all visible light from red to blue.
第１図は従来のＧａＰ（ガリウム燐）多色発光ダイオー
ドで採用されているｎＰＰｎ構造をＳ１Ｃに適用した本
のであり、（１）は６Ｈ（ヘキサゴナ−／Ｌ’ ） タ
イプのｎ型Ｓ１０基板、（２）〜（５）Ｆｉ該基板上に
順次エピタキシャル成長にて積層され、夫々６Ｈタイプ
である第１ｎ型Ｓ１０層、第１ＰｔｊＩＩＳ１０層、第
２Ｐ型ＳｉＣ層及び第２ｎ型ＳｔＣ層である。Figure 1 is a book in which the nPPn structure adopted in conventional GaP (gallium phosphide) multicolor light emitting diodes is applied to S1C, and (1) is a 6H (hexagonal/L') type n-type S10 substrate, (2) to (5) Fi are a first n-type S10 layer, a first PtjIIS10 layer, a second P-type SiC layer, and a second n-type StC layer, each of which is 6H type, and are epitaxially grown on the Fi substrate.
第１ｎ型５ｉ−０層（２）はドナー不純物としてＮ（窒
素）を含むと共に、Ｇａ（ガリウム）を含むことにより
緑色発光中心としてのＧａ−Ｎ対を有し、また第１Ｐ型
Ｓ１Ｃ層（３）はアクセプター不純物として、Ｇａを含
んでおり、従って第１ｎ型ＳＩＣ層（２）と第１Ｐ型Ｓ
ｉＯ層（３）との界面には緑色発光接合（６）が存在す
ることとなる。The first n-type 5i-0 layer (2) contains N (nitrogen) as a donor impurity and Ga (gallium), so it has a Ga-N pair as a green emission center, and the first P-type S1C layer ( 3) contains Ga as an acceptor impurity, and therefore the first n-type SIC layer (2) and the first P-type S
A green light-emitting junction (6) is present at the interface with the iO layer (3).
第２ｎ型Ｓ１０層（５）はドナー不純物としてＮを含む
と共にＡｎ（アルミニウム）′ｆ：含むことにより青色
発光中心としてのＡｌ−Ｎ対を有し、また＄２Ｐ型Ｓｉ
Ｏ層（４）はアクセプター不純物としてＡＩを含んでお
り、従ッテｊｌ ２ ｎ型ＳｉＣ層（５）ト第２Ｐ型Ｓ
ｉＯ層（４）との界面には青色発光接合（７）が存在す
ることとなる。The second n-type S10 layer (5) contains N as a donor impurity, and contains An (aluminum)'f:, thereby having an Al-N pair as a blue emission center, and also contains $2P type Si.
The O layer (4) contains AI as an acceptor impurity, and the second p-type S
A blue light-emitting junction (7) is present at the interface with the iO layer (4).
（８）は基板（１）裏面に形成されたオーミック性の第
１電極、（９）は第２ｎ型Ｓ１０層（５）上に形成石れ
たオーミック性の第２電極、αＯは第２ｎ型ＳｉＣ層（
５）の一部をエツチング除去したのちに露出した第２Ｐ
型ＳＩＣ層（４）表面に形成されたオーミック性の第５
電極である。(8) is the first ohmic electrode formed on the back surface of the substrate (1), (9) is the second ohmic electrode formed on the second n-type S10 layer (5), and αO is the second n-type electrode. SiC layer (
5) The second P exposed after removing a part of it by etching
Ohmic fifth layer formed on the surface of the type SIC layer (4)
It is an electrode.
斯る装置では第１電極（８）−第３電極αＯ間に順方向
バイアスを印加すると緑色発光接合（６）付近より緑色
光が発し、また第２電極（９）−第３電極αＯ間に順方
向バイアスを印加すると青色発光接合（７）付近より青
色光が発する。更に第１電極（８）−第３電極００間及
び第２電極（９）−第５電極αＯ間の夫々に適当な電流
を流せば緑から青までの色を発光させることが可能であ
る。In such a device, when a forward bias is applied between the first electrode (8) and the third electrode αO, green light is emitted from near the green light emitting junction (6), and between the second electrode (9) and the third electrode αO. When a forward bias is applied, blue light is emitted near the blue light emitting junction (7). Furthermore, by flowing appropriate currents between the first electrode (8) and the third electrode 00 and between the second electrode (9) and the fifth electrode αO, it is possible to emit light in colors from green to blue.
上記発光は夫々のｎ型ＳＬＣ層（２’）（５）に含まれ
たドナー不純物量及びアクセプター不純物（Ｇａ、Ａ
ｌ ）により形成されたドナー準位とアクセプター準位
との間で生じる電子と正孔との再結合により生じるもの
である。またこのとき上記第１、第２Ｐ型Ｓｉ、０層（
３）（４）は単にＰｎ接合を形成している第１、第２ｎ
型ＳｉＣ層（２）（５）に正孔を供給する供給源の役割
を果しているのみである。The above light emission is caused by the amount of donor impurities and acceptor impurities (Ga, A
This is caused by the recombination of electrons and holes that occur between the donor level and acceptor level formed by (1). At this time, the first and second P-type Si, 0 layers (
3) (4) simply refers to the first and second n junctions forming a Pn junction.
It only serves as a source for supplying holes to the type SiC layers (2) and (5).
本発明は斯る知見に基づいてなされたもので、構造が簡
単で製造が容易な多色発光Ｓ１０ダイオード等を提供せ
んとする本のであり、その特徴はＰ型Ｓ１Ｃ層上に異な
る不純物状態を有した複数のＮ型ＳＩＣ層が堆積してい
ることである。以下実施例に基づき本発明を説明する。The present invention has been made based on such knowledge, and is a book that attempts to provide a multicolor light emitting S10 diode etc. that has a simple structure and is easy to manufacture. A plurality of N-type SIC layers are deposited. The present invention will be explained below based on Examples.
第２図は本発明の一実施例を示し、（ハ）は６Ｈタイプ
ｎｍ５１ｃ基板、に）〜（財）は該基板上に順次工型５
ｉ−０層（イ）及び第２ｎ型Ｓ１０層（財）は夫々第１
図の第１ｎ型５ｉ−０層（２）及び第２ｎ層ＳｉＣ層（
５）と同一の不純物を含み、またＰ型ＳＩＣＦｍ＠はＡ
ｌをアクセプター不純物として含んでいる。従って第１
ｎ型ＳＩＣ層四とＰ型Ｓ１０層（２）との界面には緑色
発光接合（ホ）が、また第２ｎ型５ｉ−Ｃｊｌ（財）と
ｐｍｓｘｃ＠（至）との界面には青色発光接合（ホ）が
夫々形成されている。FIG. 2 shows an embodiment of the present invention, in which (c) is a 6H type nm51c substrate, and (c) to (b) are sequentially formed molds 5 on the substrate.
The i-0 layer (A) and the second n-type S10 layer (F) are the first
The first n-type 5i-0 layer (2) and the second n-type SiC layer (
5), and P-type SICFm@A
Contains l as an acceptor impurity. Therefore, the first
There is a green light-emitting junction (e) at the interface between the n-type SIC layer 4 and the p-type S10 layer (2), and a blue light-emitting junction at the interface between the second n-type 5i-Cjl (foundation) and pmsxc@ (to). (e) are formed respectively.
勾、翰は基板（ハ）裏面及び第２ｎ型５ｉＣｊｌ−表面
に夫々形成され九オーミック性の第１及び第２電極、＠
は第２ｎ型ＳｔＣ＠−の一部を除去して露出したＰ型Ｓ
’ｘＣ＠＠上に形成されたオーミック性の第３電極であ
る。The slope and the fence are formed on the back surface of the substrate (c) and the surface of the second n-type 5iCjl-, respectively, and are 9-ohmic first and second electrodes, @
is the P-type S exposed by removing a part of the second n-type StC@-
It is an ohmic third electrode formed on 'xC@@.
斯る装置では第１図装置と同様に第１電極（２）−第３
電極四間、第２電極（至）−第３電極四間に夫々順方向
バイアスを印加すれば緑及び青色の発光が得られ、また
両電極間に適当な電流を同時に印加すると青から緑まで
の種々の発光色が得られる。In such an apparatus, the first electrode (2) - the third electrode are connected similarly to the apparatus shown in FIG.
By applying a forward bias between the four electrodes and between the second and third electrodes, green and blue light emission can be obtained, and by applying an appropriate current between both electrodes at the same time, light emission from blue to green can be obtained. A variety of luminescent colors can be obtained.
本実施例装置では、Ｐ型５１ａＩｌ＠の両側に第１及び
第２ｎ型ＳＩＣ層−を成長させているので第１図の従来
構造に比してＰ型ＳＩＣ層が一つ少なくてすむ。従って
Ｐ型ＳＩＣ層製造のための一工程が省略でき生産コスト
を低くすることができる。In the device of this embodiment, since the first and second n-type SIC layers are grown on both sides of the P-type 51aIl@, one less P-type SIC layer is required compared to the conventional structure shown in FIG. Therefore, one step for manufacturing the P-type SIC layer can be omitted, and production costs can be reduced.
第５図は他の実施例を示し、赤から青までの金色を発光
可能な金色発光ＳＩＣダイオードに本発明を適用したも
のである。FIG. 5 shows another embodiment in which the present invention is applied to a gold light emitting SIC diode capable of emitting gold colors ranging from red to blue.
図中、０１は６ＨタイプＨｍＳｉ−Ｃ基板、（２）〜（
至）は該基板上に順次エピタキシャル成長により積層さ
れた６Ｈタイプの第１ｎ型Ｓ１Ｃ層、第１Ｐ型ＳＩＣ層
、第２ｎ型ｓｔｃ層、第５ｎｌ！ＳｉＣ層、第２Ｐ型Ｓ
ｔＣ層である。In the figure, 01 is a 6H type HmSi-C substrate, (2) to (
(to) is a 6H type first n-type S1C layer, first P-type SIC layer, second n-type STC layer, and fifth nl! layer, which are sequentially laminated on the substrate by epitaxial growth. SiC layer, second P type S
This is the tC layer.
第１ｎＩＪｉＳｉＣＩｌｌ＠はドナー不純物としてＮを
含むと共にＢｅ（べＩＪＩＪウム）を含んで赤色発光第
１、第２ ｎｆｔ１ｓ ＩＣＪｌ＠Ｈと同様に不純物と
してＧａ、Ｎ及びＡＩ、Ｎを含み、夫々緑色及び青色発
光中心としてのＧａ−Ｎ対及びＡＩ−Ｎ対を有している
。更に第１、第２Ｐ型５ｉ−ＯＪｌ（至）（至）は共に
アクセプタ不純物としてＡＪを含んでいる。The 1st nFT1s ICJl@H contains N as a donor impurity and also Be (Be) and emits red light.Similar to the 1st and 2nd nft1s ICJl@H, it contains Ga, N and AI, N as impurities, and emits green and blue light, respectively. It has a Ga-N pair and an AI-N pair as luminescent centers. Further, both the first and second P-type 5i-OJl (to) (to) contain AJ as an acceptor impurity.
従ッテ第１ｎ型ＳＬＣ＠＠と第１Ｐ型５１ＣＪ１１＠と
の界面は赤色発光接合（至）となり、また第２ｎ型ｓｔ
ｃ層（至）と第ｌＰｍＳｉ、Ｃ１１（至）との界面は緑
色Ｈ〜（４１ｄ夫＊基ｔ１．ｅｅ裏面、１２Ｐｍｓｉｃ
Ｊｌｃ！４表面、第２Ｐ型Ｓｉ、Ｃｊｌ（至）を除去し
て露出した第３ｎ型５ｉＣＪＩＣ１１表面及び第２ Ｐ
ｍＩｓ １０１１％ 〜第２ｎｍＳｉＣｊｌｌ（ロ）を
除去して露出した第１Ｐ型ｓｔｃｍ＠表面に夫々形成さ
れたオーミック性の第１〜第４電極である。The interface between the first n-type SLC@@ and the first P-type 51CJ11@ becomes a red light-emitting junction (to), and the second n-type
The interface between the c layer (to) and the 1st PmSi, C11 (to) is green
Jlc! 4 surface, the 2nd P type Si, the 3rd n type 5iCJIC11 surface exposed by removing Cjl, and the 2nd P type
mIs 1011% - Ohmic first to fourth electrodes are respectively formed on the first P-type stcm@ surface exposed by removing the second nm SiCjll (b).
斯る装置では、第１電極（イ）−第４電極榊間、第６電
極（転）−第４電極−間及び第２電極＠ルー第５電極−
間に夫々順方向バイアスを印加すると赤色発光接合（ロ
）、緑色発光接合（至）及び青色発光接合員付近から夫
々赤色光、緑色光及び青色光が得られる。In such a device, the distance between the first electrode (a) and the fourth electrode Sakaki, between the sixth electrode (rotation) and the fourth electrode, and between the second electrode and the fifth electrode
When a forward bias is applied between them, red light, green light, and blue light are obtained from the vicinity of the red light-emitting junction (b), the green light-emitting junction (to), and the blue light-emitting junction, respectively.
また上記３電極間に夫々適当な電流を同時に印加すると
、赤から青までの種々の発光色を得ることが可能である
。Furthermore, by simultaneously applying appropriate currents between the three electrodes, it is possible to obtain various luminescent colors from red to blue.
また、本実施例も第１の実施例と同様に第１Ｐ型ＳｉＣ
層（至）が赤色発光接合（ロ）及び緑色発光接合に）に
対して共通Ｐ型層となっているので生産コストが安くな
る。Further, in this example, similarly to the first example, the first P-type SiC
Since the layers (to) are common P-type layers for the red light-emitting junction (b) and the green light-emitting junction, production costs are reduced.
ｊＪＡ図は更に他の実施例を示し、本発明をＬＥＤ平面
表示装置に応用したものである。Figure jJA shows still another embodiment in which the present invention is applied to an LED flat display device.
図中、θηはｎ型ＳｉＣ基板、−は該基板上に形成され
アクセプター不純物としてＡＩを含むＰ型ＳｉＣ層、■
は該Ｐ型Ｓ１０層を絵素（財）単位に相互に電気的に分
離する溝、に）〜＠は上記絵素（財）毎に形成された第
１〜第３ｎ型５ｉ−０層であり、該第１〜第３ｎ型Ｓｉ
Ｃ１１ｍは夫々第２の実施例の第１〜第３ｎ型５ＩＣ４
＠＠＠（至）と同一材料からなり、赤色発光中心として
のＢｅ−Ｎ対、緑色発光中心としてのＧａ−Ｎ対、青色
発光中心としてのＡｄ−Ｎ対を夫々有している。従って
第１〜第６ｎ型Ｓ１Ｃ層−〜に）とＰ型Ｓ１０層−との
界面には夫々赤色発光接合−１緑色発光接合■、青色発
光接合−が夫々形成される。In the figure, θη is an n-type SiC substrate, - is a p-type SiC layer formed on the substrate and containing AI as an acceptor impurity,
is a groove that electrically separates the P-type S10 layer from each other on a picture element (goods) basis; Yes, the first to third n-type Si
C11m are the first to third n-type 5IC4 of the second embodiment, respectively.
It is made of the same material as @@@ (to) and has a Be-N pair as a red emission center, a Ga-N pair as a green emission center, and an Ad-N pair as a blue emission center. Therefore, a red light emitting junction (1), a green light emitting junction (1), and a blue light emitting junction (2) are formed at the interfaces between the first to sixth n-type S1C layers (-) and the P-type S10 layer, respectively.
輔は上記絵素−毎にＰ型ＳＩＣ層−上に形成されたオー
ミック性の共通電極、匈〜−は上記第１〜第５ｎ型Ｓ１
Ｃ層−〜（ロ）上に夫々形成されたオｉツク性の第１〜
第３電極である。茈 is an ohmic common electrode formed on the P-type SIC layer for each picture element, and 匈 is the first to fifth n-type S1.
C layer-~ (b) The first layer of acidity formed on each layer.
This is the third electrode.
斯る装置において共通電極参めと第１〜第３電極−〜−
との各々の間に夫々順方向バイアスを印加すれば、上記
３接合−〜輪より夫々赤色光、緑色光及び青色光が得ら
れ、また上記各電極間に同時に順方向バイアスを印加す
ると共に各印加バイアスを調節することにより各絵素一
単位毎に赤〜青までの種々の発光色を得ることができる
。In such a device, the common electrode and the first to third electrodes
If a forward bias is applied between each of the electrodes, red light, green light, and blue light are obtained from the three junctions. By adjusting the applied bias, it is possible to obtain various luminescent colors from red to blue for each pixel unit.
斯る装置はｎ型Ｓ１Ｃ基板ゆ上にＰ型ＳｉＣ層四を形成
すると共に斯る層を絵素一単位に相互に電気的に分離し
た後、上記絵素（財）毎に上記第１〜第３ｎ型ＳｉＯ層
−〜−を選択的に形成することにより得られるので構造
が簡単で生産性に豊んでいる。In such a device, four P-type SiC layers are formed on an n-type S1C substrate, and after these layers are electrically isolated from each other in units of picture elements, the above-mentioned first to fourth layers are formed for each picture element. Since it is obtained by selectively forming the third n-type SiO layers, the structure is simple and the productivity is high.
尚、上記第２〜第４図に示した実施例では成長層として
全て６ＨタイプＳｉＣ層を用いたが、例えば赤色発光中
心を有するｎ型Ｓ１０層を３Ｃ（キュービック）タイプ
ＳｉＣ層にすること本可能であり、この場合不純物とし
てＦｉＢ（ホウ素）、Ｎ〜が好適である。またＰ型Ｓ１
Ｃ層の不純物をＡｊとしたがＧａ、Ｂｅ等を用いてもよ
い。更に本実施例におけるｎ型ＳＩＣ層の成長ではＰ型
ＳｉＣ層の不純物がｎ型Ｓ１Ｃ層に拡散して斯る層の発
光中心を変化しないようにすることが重要であり、従っ
て斯るｎ型Ｓ１０層の成長は気相成長法が好適である。In the embodiments shown in FIGS. 2 to 4 above, 6H type SiC layers were used as growth layers, but it is also possible to replace the n-type S10 layer with a red luminescent center with a 3C (cubic) type SiC layer, for example. It is possible, and in this case, FiB (boron) and N~ are suitable as impurities. Also, P type S1
Although the impurity of the C layer is Aj, Ga, Be, etc. may also be used. Furthermore, in the growth of the n-type SIC layer in this example, it is important to prevent the impurities of the P-type SiC layer from diffusing into the n-type S1C layer and changing the emission center of this layer. A vapor phase growth method is suitable for growing the S10 layer.
以上の説明から明らかな如く、本発明によればＳｉＣ結
晶より多色もしくは金色発光ダイオードを形成する場合
構造が簡単で生産性に豊むという効果が得られる。As is clear from the above description, according to the present invention, when forming a multicolor or golden light emitting diode using SiC crystal, the structure is simple and the productivity is high.
第１図は従来のｎＰＰｎ構造の多色発光ＳｉＯダイオー
ドを示す断面図、第２図は本発明の一実施例を示す断面
図、第３図は他の実施例を示す断面図、第４図は更に他
の実施例を示す断面図である。
翰、０４、（２）、（至）、輪、輪、６４−ｎ型ＳｉＣ
層、翰、（至）、−・・・Ｐ型ＳＸＣ層。Fig. 1 is a sectional view showing a conventional multicolor light emitting SiO diode with an nPPn structure, Fig. 2 is a sectional view showing one embodiment of the present invention, Fig. 3 is a sectional view showing another embodiment, and Fig. 4. FIG. 7 is a sectional view showing still another embodiment. Kan, 04, (2), (to), ring, ring, 64-n type SiC
layer, 翰, (to), ---P type SXC layer.
Claims (1)
のＰ型ＳｉＣ層と夫々Ｐ−ｎ接合を形成していることを
特徴とする８１０発光ダイオード。(1) An 810 light emitting diode characterized in that a plurality of n-type SIC layers having different impurities each form a P-n junction with one P-type SiC layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57003574A JPS58121690A (en) | 1982-01-12 | 1982-01-12 | Sic light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57003574A JPS58121690A (en) | 1982-01-12 | 1982-01-12 | Sic light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58121690A true JPS58121690A (en) | 1983-07-20 |
Family
ID=11561217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57003574A Pending JPS58121690A (en) | 1982-01-12 | 1982-01-12 | Sic light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58121690A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60143679A (en) * | 1983-12-29 | 1985-07-29 | Sanyo Electric Co Ltd | Sic light emitting diode |
| JPS6164175A (en) * | 1984-09-06 | 1986-04-02 | Ulvac Corp | Amorphous semiconductor light-emitting diode and plane display device utilizing said diode |
| US5433167A (en) * | 1992-02-04 | 1995-07-18 | Sharp Kabushiki Kaisha | Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50151484A (en) * | 1974-05-27 | 1975-12-05 | ||
| JPS5212554A (en) * | 1975-07-21 | 1977-01-31 | Nec Corp | Vertical type current converter circuit |
| JPS5383588A (en) * | 1976-12-29 | 1978-07-24 | Mitsubishi Electric Corp | Manufacture of substrate for semiconductor light emitting device |
-
1982
- 1982-01-12 JP JP57003574A patent/JPS58121690A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50151484A (en) * | 1974-05-27 | 1975-12-05 | ||
| JPS5212554A (en) * | 1975-07-21 | 1977-01-31 | Nec Corp | Vertical type current converter circuit |
| JPS5383588A (en) * | 1976-12-29 | 1978-07-24 | Mitsubishi Electric Corp | Manufacture of substrate for semiconductor light emitting device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60143679A (en) * | 1983-12-29 | 1985-07-29 | Sanyo Electric Co Ltd | Sic light emitting diode |
| JPS6164175A (en) * | 1984-09-06 | 1986-04-02 | Ulvac Corp | Amorphous semiconductor light-emitting diode and plane display device utilizing said diode |
| US5433167A (en) * | 1992-02-04 | 1995-07-18 | Sharp Kabushiki Kaisha | Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal |
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