CN110534542A - A kind of integrated light-emitting Micro LED chip and preparation method thereof - Google Patents
A kind of integrated light-emitting Micro LED chip and preparation method thereof Download PDFInfo
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Abstract
A kind of integrated light-emitting Micro LED chip and preparation method thereof, belong to semiconductor light electro-technical field, first in the ipsilateral epitaxial growth buffer of substrate, unintentional doped gan layer and n-type doping GaN layer, then again by depositing dielectric mask layer twice, etch to lateral separation the first, second blue light EL structure layer and green light EL structure layer, and corresponding light emitting structure layer is made in the etch areas being correspondingly formed, then the blue light that the second blue light EL structure layer issues is converted to by feux rouges by red photoluminescent conversion layer.Invention achieves by GaN base blue light and green light electroluminescent and red photoluminescent Integration ofTechnology, it is fabricated to red, green, blue three primary colours Micro LED luminescence unit, and the effect that red, green, blue three-color light-emitting unit transverse compartment of terrain is deposited on n-type doping GaN layer, and is connected by n-type doping GaN layer.
Description
Technical field
The invention belongs to semiconductor light electro-technical fields, the especially production technology of integrated light-emitting Micro LED chip.
Background technique
Micro LED has a vast market foreground as next-generation display technology, in the industry cycle obtains extensive concern.By
Need to integrate the red, green, blue three-primary color LED chip of high density microsize on one piece of screen in the full-color display of Micro LED
Array, therefore the gradation flood tide transfer techniques of red, green, blue three-primary color LED chip become the major technology bottleneck for restricting its development.
If flood tide transfer can be can be improved by red, green, blue three-primary color LED chip manufacturing at the integrated light emitting unit of chip level
Efficiency, reduce end product production complexity.
On the other hand, current red, green, blue three-primary color LED chip, general blue light and green light LED are in Sapphire Substrate
Upper epitaxial growth InGaN material is completed, and red-light LED is then that epitaxial growth AlInGaP material has come in gallium arsenide substrate
At being substantially difficult in same material since there are biggish lattice mismatch and thermal mismatchings between both material systems
The LED chip structure of blue and green light and feux rouges is completed at the same time on substrate.
Summary of the invention
A kind of the object of the present invention is to provide structures integrated light-emitting with red, green, blue three primary colours that is simple, facilitating production
Micro LED chip.
The technical scheme is that: buffer layer, unintentional doped gan layer and n-type doping are sequentially arranged above in substrate
GaN layer, be respectively set in n-type doping GaN layer N-type electrode, dielectric mask layer, the first blue light EL structure layer,
Second blue light EL structure layer and green light EL structure layer, in the first blue light EL structure layer, second
P-type electrode is respectively set in blue light EL structure layer and green light EL structure layer surface；It is characterized by: described first
Blue light EL structure layer, the second blue light EL structure layer and green light EL structure layer lateral separation it is distributed in
Between dielectric mask layer；The first blue light EL structure layer and the second blue light EL structure layer are under
And upper includes: InGaN/GaN blue light multiple quantum well active layer, electronic barrier layer, p-type doping GaN layer and transparency conducting layer；Institute
State green light EL structure layer includes: that InGaN/GaN green light multiple quantum well active layer, electronic barrier layer, p-type are mixed from bottom to top
Miscellaneous GaN layer and transparency conducting layer；The photic hair of feux rouges is set on the transparency conducting layer of the second blue light EL structure layer
Light conversion layer.
The blue light that the above red photoluminescent conversion layer is used to issue on the second blue light EL structure layer is converted
For feux rouges.
The structure of the present invention briefly above make the first blue light EL structure layer, the second blue light EL structure layer and
It is deposited on n-type doping GaN layer to green light EL structure layer lateral separation, and is connected by n-type doping GaN layer, then
The blue light that the second blue light EL structure layer issues is converted into feux rouges by red photoluminescent conversion layer.The present invention will
GaN base blue light and green light electroluminescent and red photoluminescent Integration ofTechnology are fabricated to red, green, blue three primary colours Micro LED hair
Light unit improves GaN base blue green light LED with GaAs base red-light LED material system and is difficult to compatible problem, improves device and exist
Three primary colours is thermally matched when work, reduces the temperature drift of three primary colours, improves solid colour of the display when working long hours
Property, improve the reliability of Micro light-emitting diode display.Simultaneously because traditional feux rouges Micro LED chip is more crisp using material
GaAs substrate, yield is relatively low during making Micro LED, is converted with the harder GaN material system exciting light of substrate material
Material generates feux rouges, can simplify processing procedure, promotes yield；The rim effect of feux rouges microchip is more serious than blue green light, therefore red
Light Micro LED efficiency is also extremely low, can improve the luminous effect of feux rouges in such a way that blue light excitation transition material generates feux rouges
Rate.In addition, the present invention passes through the integrated of the red, green, blue three primary color elements pixel of microchip rank, Micro LED is also improved
The efficiency that flood tide shifts in full-color display technology reduces the complexity of end product production.
Further, the material of red photoluminescent conversion layer of the present invention can use red light fluorescent powder, or use
Red light quantum point, or using the mixture of red light fluorescent powder and red light quantum point, but not limited to this.
Further, the width of the first blue light EL structure layer is 1~100 μm；Second blue light is electroluminescent
The width of light emitting structure layer is 1~100 μm；The width of the green light EL structure layer is 1~100 μm.It can be by dividing
It is respective not change the first blue light EL structure layer, the second blue light EL structure layer and green light EL structure layer
Size matches and distribution to control the spectrum of integrated luminescence chip.
It is another object of the present invention to propose the production method of above-mentioned integrated light-emitting Micro LED chip.
That is: first in ipsilateral successively epitaxial growth buffer, unintentional doped gan layer and the n-type doping GaN layer of substrate；So
It is further comprising the steps of afterwards:
1) dielectric mask layer is deposited for the first time in the n-type doping GaN layer, then etched, cover in the dielectric
The first blue light EL structure layer growth district and the second blue light EL structure layer are etched to lateral separation in film layer
Growth district, etching depth is until expose the n-type doping GaN layer；
2) in the first blue light EL structure layer growth district and the second blue light EL structure layer growth district
Successively epitaxial growth InGaN/GaN blue light multiple quantum well active layer, electronic barrier layer and p-type doping GaN layer simultaneously；
3) in the dielectric mask layer of reservation, the p-type doping GaN layer of the first blue light EL structure layer and the second blue light electricity
Second of the p-type doping GaN layer surface of photoluminescence structure sheaf deposition dielectric mask layer, then it is etched, it is situated between in the insulation
Green light EL structure layer growth district is etched in matter mask layer, etching depth is until expose the n-type doping GaN layer；
The green light EL structure layer growth district and the first blue light EL structure layer growth district or second etched
Blue light EL structure layer growth district is in lateral separation；
4) successively epitaxial growth InGaN/GaN green light multiple quantum wells is active in the green light EL structure layer growth district
Layer, electronic barrier layer and p-type doping GaN layer；
5) dielectric mask layer is performed etching, until exposing the p-type doping GaN of the first blue light EL structure layer
The p-type doping GaN layer of layer, the p-type doping GaN layer of the second blue light EL structure layer and green light EL structure layer；
6) in the p-type doping GaN layer of the first blue light EL structure layer, the p-type of the second blue light EL structure layer
Transparency conducting layer is deposited respectively in doped gan layer and the p-type doping GaN layer of green light EL structure layer；
7) etched, N-type electrode production region is etched in the dielectric mask layer, etching depth is until described in exposing
N-type doping GaN layer；
8) in transparent the leading of the transparency conducting layer, the second blue light EL structure layer of the first blue light EL structure layer
P-type electrode is made respectively on the transparency conducting layer of electric layer and green light EL structure layer, in N-type electrode production region
N-type electrode is made in n-type doping GaN layer；
9) red photoluminescent conversion layer is made on the transparency conducting layer of the second blue light EL structure layer.
The present invention etches to lateral separation the first blue light EL structure by depositing dielectric mask layer twice
Layer, the second blue light EL structure layer and green light EL structure layer, and the production pair in the etch areas being correspondingly formed
The light emitting structure layer answered, then the blue light for being issued the second blue light EL structure layer by red photoluminescent conversion layer
Be converted to feux rouges.Reached GaN base blue light and green light electroluminescent and red photoluminescent Integration ofTechnology, be fabricated to it is red, green,
Blue three primary colours Micro LED luminescence unit, and red, green, blue three-color light-emitting unit transverse compartment of terrain is deposited on n-type doping
On GaN layer, and the effect connected by n-type doping GaN layer.
Further, the material of the dielectric mask layer is in silica, silicon nitride, silicon oxynitride or aluminium oxide
Any one, but not limited to this.Above-mentioned dielectric mask layer is used as separation layer.
The width of corresponding each light emitting structure layer in order to obtain, the first blue light EL structure layer growth etched
The width in region is 1~100 μm；The width of the second blue light EL structure layer growth district etched is 1~100 μm；
The width of the green light EL structure layer growth district etched is 1~100 μm.
The beneficial effects of the present invention are: by GaN base blue light and green light electroluminescent and red photoluminescent Integration ofTechnology, system
It is made red, green, blue three primary colours Micro LED luminescence unit, improves GaN base blue green light LED and GaAs base red-light LED material bodies
System is difficult to compatible problem, improves colour consistency and reliability of the Micro light-emitting diode display when working long hours, simultaneously
Simplify manufacturing process, promote yield, and by the integrated of the red, green, blue three primary color elements pixel of microchip rank, improves
The efficiency that flood tide shifts in the full-color display technology of Micro LED reduces the complexity of end product production.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of the invention.
Fig. 2 is the structural representation grown after the first blue light EL structure layer and the second blue light EL structure layer
Figure.
Fig. 3 is the structural schematic diagram grown after green light EL structure layer.
Fig. 4 is to have made the structural schematic diagram after transparency conducting layer.
Fig. 5 is to have made the structural schematic diagram after P-type electrode and N-type electrode.
Wherein, main appended drawing reference is described as follows:
10: substrate；
20: buffer layer；
30: unintentional doped gan layer；
40:n type doped gan layer；
50: dielectric mask layer；
61: the first blue light multiple quantum well active layers；
62: the first blue light electronic barrier layers；
63: the first blue light p-type doping GaN layers；
71: the second blue light multiple quantum well active layers；
72: the second blue light electronic barrier layers；
73: the second blue light p-type doping GaN layers；
81: green light multiple quantum well active layer；
82: green light electronic barrier layer；
83: green light p-type doping GaN layer；
90: transparency conducting layer；
101:P type electrode；
102:N type electrode；
110: red photoluminescent conversion layer.
Specific embodiment
One, making step:
1, a kind of substrate 10 is provided, can be sapphire, silicon, silicon carbide, any one in gallium nitride, but not limited to this.
2, in MOCVD board, using conventional LED growth technology, the successively epitaxial growth buffer on substrate 10
20, unintentional doped gan layer 30 and n-type doping GaN layer 40.
3, by plasma reinforced chemical vapour deposition method, dielectric is deposited for the first time in n-type doping GaN layer 40
Mask layer 50, then the first blue light EL structure layer and the are made on 50 surface of dielectric mask layer by way of photoetching
Two blue light EL structure layer region exposure masks, the width of masked areas use chemical attack or sense between 1~100 μm
Etch the first blue light EL structure layer growth district and the second indigo plant with answering coupled plasma etch method lateral separation
Photoelectricity photoluminescence structure sheaf growth district exposes n-type doping GaN layer 40, for one blue light EL structure layer of growth regulation and
Second blue light EL structure layer.
4, electroluminescent in the first blue light that step 3 is formed using conventional blue laser LED growth technology in MOCVD board
Successively epitaxial growth InGaN/GaN simultaneously in light emitting structure layer growth district and the second blue light EL structure layer growth district
Blue light multiple quantum well active layer 61 and 71, electronic barrier layer 62 and 72 and p-type doping GaN layer 63 and 73, as shown in Figure 2.
5, it by plasma reinforced chemical vapour deposition method, is deposited absolutely for second on the epitaxial structure that step 4 is formed
Edge medium mask layer 50, then green light EL structure floor area is made on 50 surface of dielectric mask layer by way of photoetching
Domain exposure mask, the width of masked areas use chemical attack or sense coupling method between 1~100 μm
Green light EL structure layer growth district is etched, exposes n-type doping GaN layer 40, for growing green light EL structure
Layer.The green light EL structure layer growth district and the first blue light EL structure layer growth district that etch or the second indigo plant
Photoelectricity photoluminescence structure sheaf growth district is in lateral separation.
6, in MOCVD board, using conventional green light LED growth technology, in the green light electroluminescent that step 5 is formed
Successively epitaxial growth InGaN/GaN green light multiple quantum well active layer 81, electronic barrier layer 82 and p-type are mixed in structure sheaf growth district
Miscellaneous GaN layer 83, as shown in Figure 3.
7, by the method for photoetching, exposure mask is made in green light EL structure layer surface, and use chemical attack or sense
Coupled plasma etch method is answered, the dielectric mask layer 50 for the body structure surface that step 6 is formed is etched into a part, until
Expose the first blue light EL structure layer, the second blue light EL structure layer and green light EL structure layer.
8, conductive in the body structure surface deposition layer of transparent that step 7 is formed by electron beam evaporation plating or magnetically controlled sputter method
Film, then exposure mask is made on surface by way of photoetching, and by the way of corrosion, only retain the first blue light electroluminescent knot
The transparent conductive film of structure layer, the second blue light EL structure layer and green light EL structure layer surface forms transparent lead
Electric layer 90, as shown in Figure 4.
9, by the method for photoetching, exposure mask is made in the body structure surface that step 8 is formed, and using chemical attack or induction coupling
Method for etching plasma is closed, the dielectric mask layer 50 on surface is etched into N-type electrode region, exposes n-type doping GaN layer
40 for making N-type electrode.
10, by the method for photoetching, exposure mask, then the side for passing through electron beam evaporation plating are made in the body structure surface that step 9 is formed
Method removes the metal of masked areas in surface deposited metal layer, and by the way of removing, in the first blue light EL structure
P-type electrode is made respectively on the transparency conducting layer 90 of layer, the second blue light EL structure layer and green light EL structure layer
101, N-type electrode 102 is made in the n-type doping GaN layer 40 in N-type electrode region, as shown in Figure 5.
11, by the method for photoetching, exposure mask is made in the body structure surface that step 10 is formed, and using coating or inkjet printing
Mode, on the transparency conducting layer 90 of the second blue light EL structure layer make red photoluminescent conversion layer 110, such as scheme
Shown in 1.
The material of red photoluminescent conversion layer 110 can be red light fluorescent powder, at least any one in red light quantum point
Kind, but not limited to this.
Dielectric mask layer 50 is also used as separation layer simultaneously in the above manufacturing process, dielectric mask layer 50
Material can be silica, silicon nitride, silicon oxynitride, any one in aluminium oxide, and but not limited to this.
Two, the design feature of product is made:
As shown in Figure 1, product structure includes: substrate 10, buffer layer 20, unintentional doped gan layer 30, n-type doping from bottom to top
GaN layer 40, and the first blue light EL structure layer in the n-type doping GaN layer 40, the second blue light electroluminescent
Structure sheaf and green light EL structure layer, while further including the transparency conducting layer 90 positioned at the second blue light EL structure layer
On red photoluminescent conversion layer 110.
First blue light EL structure layer, the second blue light EL structure layer and green light EL structure layer are lateral
Compartment of terrain is deposited on n-type doping GaN layer 40, and is connected by n-type doping GaN layer 40.
Red photoluminescent conversion layer 110 is red for being converted to the blue light that the second blue light EL structure layer issues
Light.
First blue light EL structure layer is by InGaN/GaN blue light multiple quantum well active layer 61, electronic barrier layer 62, p
Type doped gan layer 63 and transparency conducting layer 90 form.
Second blue light EL structure layer is by InGaN/GaN blue light multiple quantum well active layer 71, electronic barrier layer 72, p
Type doped gan layer 73 and transparency conducting layer 90 form.
Green light EL structure layer is mixed by InGaN/GaN green light multiple quantum well active layer 81, electronic barrier layer 82, p-type
Miscellaneous GaN layer 83 and transparency conducting layer 90 form.
In addition, in order to by changing the first blue light EL structure layer, the second blue light EL structure
Layer and the respective size of green light EL structure layer match and distribution to control the spectrum of integrated luminescence chip.Cause
This, the first blue light EL structure layer in product, the second blue light EL structure layer and green light EL structure layer
Width is 1~100 μm.
The technical program that the above embodiments are only illustrative and not limiting, any technical side for not departing from the scope of the invention
Case is covered by the protection scope of the present invention.
Claims (10)
1. a kind of integrated light-emitting Micro LED chip is sequentially arranged above buffer layer, unintentional doped gan layer and n in substrate
N-type electrode, dielectric mask layer, the first blue light electroluminescent knot is respectively set in type doped gan layer in n-type doping GaN layer
Structure layer, the second blue light EL structure layer and green light EL structure layer, the first blue light EL structure layer,
P-type electrode is respectively set in second blue light EL structure layer and green light EL structure layer surface；It is characterized by: described
Divide to first blue light EL structure layer, the second blue light EL structure layer and green light EL structure layer lateral separation
Cloth is between dielectric mask layer；The first blue light EL structure layer and the second blue light EL structure layer
It from bottom to top include: InGaN/GaN blue light multiple quantum well active layer, electronic barrier layer, p-type doping GaN layer and electrically conducting transparent
Layer；The green light EL structure layer include: from bottom to top InGaN/GaN green light multiple quantum well active layer, electronic barrier layer,
P-type doping GaN layer and transparency conducting layer；Feux rouges light is set on the transparency conducting layer of the second blue light EL structure layer
Photoluminescence conversion layer.
2. integrated light-emitting Micro LED chip according to claim 1, it is characterised in that: the red photoluminescent turns
Change layer material be in red light fluorescent powder or red light quantum point at least any one.
3. integrated light-emitting Micro LED chip according to claim 1, it is characterised in that: the electroluminescent hair of the first blue light
The width of photo structure layer is 1~100 μm.
4. integrated light-emitting Micro LED chip according to claim 1, it is characterised in that: the electroluminescent hair of the second blue light
The width of photo structure layer is 1~100 μm.
5. integrated light-emitting Micro LED chip according to claim 1, it is characterised in that: the green light electroluminescent knot
The width of structure layer is 1~100 μm.
6. the production method of integrated light-emitting Micro LED chip as described in claim 1, in the ipsilateral successively epitaxial growth of substrate
Buffer layer, unintentional doped gan layer and n-type doping GaN layer；It is characterized by also including following steps:
1) dielectric mask layer is deposited for the first time in the n-type doping GaN layer, then etched, cover in the dielectric
The first blue light EL structure layer growth district and the second blue light EL structure layer are etched to lateral separation in film layer
Growth district, etching depth is until expose the n-type doping GaN layer；
2) in the first blue light EL structure layer growth district and the second blue light EL structure layer growth district
Successively epitaxial growth InGaN/GaN blue light multiple quantum well active layer, electronic barrier layer and p-type doping GaN layer simultaneously；
3) in the dielectric mask layer of reservation, the p-type doping GaN layer of the first blue light EL structure layer and the second blue light electricity
Second of the p-type doping GaN layer surface of photoluminescence structure sheaf deposition dielectric mask layer, then it is etched, it is situated between in the insulation
Green light EL structure layer growth district is etched in matter mask layer, etching depth is until expose the n-type doping GaN layer；
The green light EL structure layer growth district and the first blue light EL structure layer growth district or second etched
Blue light EL structure layer growth district is in lateral separation；
4) successively epitaxial growth InGaN/GaN green light multiple quantum wells is active in the green light EL structure layer growth district
Layer, electronic barrier layer and p-type doping GaN layer；
5) dielectric mask layer is performed etching, until exposing the p-type doping GaN of the first blue light EL structure layer
The p-type doping GaN layer of layer, the p-type doping GaN layer of the second blue light EL structure layer and green light EL structure layer；
6) in the p-type doping GaN layer of the first blue light EL structure layer, the p-type of the second blue light EL structure layer
Transparency conducting layer is deposited respectively in doped gan layer and the p-type doping GaN layer of green light EL structure layer；
7) etched, N-type electrode production region is etched in the dielectric mask layer, etching depth is until described in exposing
N-type doping GaN layer；
8) in transparent the leading of the transparency conducting layer, the second blue light EL structure layer of the first blue light EL structure layer
P-type electrode is made respectively on the transparency conducting layer of electric layer and green light EL structure layer, in N-type electrode production region
N-type electrode is made in n-type doping GaN layer；
9) red photoluminescent conversion layer is made on the transparency conducting layer of the second blue light EL structure layer.
7. the production method of integrated light-emitting Micro LED chip according to claim 6, it is characterised in that: the insulation
The material of medium mask layer is any one in silica, silicon nitride, silicon oxynitride or aluminium oxide.
8. the production method of integrated light-emitting Micro LED chip according to claim 6 or 7, it is characterised in that: etch
The first blue light EL structure layer growth district width be 1~100 μm.
9. the production method of integrated light-emitting Micro LED chip according to claim 6 or 7, it is characterised in that: etch
The second blue light EL structure layer growth district width be 1~100 μm.
10. the production method of integrated light-emitting Micro LED chip according to claim 6 or 7, it is characterised in that: etching
The width of green light EL structure layer growth district out is 1~100 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201910866086.9A CN110534542B (en) | 2019-09-09 | 2019-09-09 | Integrated light-emitting Micro LED chip and manufacturing method thereof |
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