CN110534542B - Integrated light-emitting Micro LED chip and manufacturing method thereof - Google Patents
Integrated light-emitting Micro LED chip and manufacturing method thereof Download PDFInfo
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- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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Abstract
An integrated luminous Micro LED chip and a manufacturing method thereof belong to the technical field of semiconductor photoelectricity, a buffer layer, an unintended doped GaN layer and an n-type doped GaN layer are firstly epitaxially grown on the same side of a substrate, then an insulating medium mask layer is deposited twice, a first blue light electroluminescent structure layer, a second blue light electroluminescent structure layer and a green light electroluminescent structure layer are transversely etched at intervals, corresponding luminous structure layers are manufactured in etching areas formed correspondingly, and blue light emitted by the second blue light electroluminescent structure layer is converted into red light through a red light photoluminescence conversion layer. The invention integrates GaN-based blue light and green light electroluminescence with red light photoluminescence technology to manufacture a red, green and blue three-primary-color Micro LED luminous unit, and the red, green and blue three-primary-color luminous units are transversely deposited on the n-type doped GaN layer at intervals and are connected through the n-type doped GaN layer.
Description
Technical Field
The invention belongs to the technical field of semiconductor photoelectricity, in particular to a production technology of an integrated light-emitting Micro LED chip.
Background
Micro LEDs have wide market prospect as the next generation display technology, and are widely focused in the industry. Since Micro LED full-color display needs to integrate high-density Micro-sized red, green and blue three-primary-color LED chip arrays on one screen, the fractional mass transfer technology of the red, green and blue three-primary-color LED chips becomes a main technical bottleneck for restricting the development of the Micro LED full-color display. If the red, green and blue three-primary-color LED chips can be manufactured into the integrated light-emitting unit at the chip level, the efficiency of mass transfer can be improved, and the manufacturing complexity of the terminal product can be reduced.
On the other hand, the current red, green and blue tricolor LED chips are generally formed by epitaxially growing InGaN material on a sapphire substrate, while the red LED is formed by epitaxially growing AlInGaP material on a gaas substrate, and it is basically difficult to simultaneously complete the LED chip structures of blue, green and red light on the same material substrate due to the large lattice mismatch and thermal mismatch between the two material systems.
Disclosure of Invention
The invention aims to provide an integrated light-emitting Micro LED chip with three primary colors of red, green and blue, which has a simple structure and is convenient to produce.
The technical scheme of the invention is as follows: a buffer layer, an unintended doped GaN layer and an N-type doped GaN layer are sequentially arranged above a substrate, an N-type electrode, an insulating medium mask layer, a first blue light electroluminescent structure layer, a second blue light electroluminescent structure layer and a green light electroluminescent structure layer are respectively arranged on the N-type doped GaN layer, and P-type electrodes are respectively arranged on the surfaces of the first blue light electroluminescent structure layer, the second blue light electroluminescent structure layer and the green light electroluminescent structure layer; the method is characterized in that: the first blue light electroluminescent structure layer, the second blue light electroluminescent structure layer and the green light electroluminescent structure layer are transversely distributed among the insulating medium mask layers at intervals; the first blue light electroluminescent structure layer and the second blue light electroluminescent structure layer each comprise from bottom to top: an InGaN/GaN blue light multi-quantum well active layer, an electron blocking layer, a p-type doped GaN layer and a transparent conductive layer; the green light electroluminescent structure layer comprises the following components from bottom to top: an InGaN/GaN green light multi-quantum well active layer, an electron blocking layer, a p-type doped GaN layer and a transparent conductive layer; and a red light photoluminescence conversion layer is arranged on the transparent conductive layer of the second blue light electroluminescence structure layer.
The red light photoluminescence conversion layer is used for converting blue light emitted by the second blue light electroluminescence structure layer into red light.
The simple structure of the invention ensures that the first blue light electroluminescent structure layer, the second blue light electroluminescent structure layer and the green light electroluminescent structure layer are transversely deposited on the n-type doped GaN layer at intervals, are connected through the n-type doped GaN layer, and then convert blue light emitted by the second blue light electroluminescent structure layer into red light through the red light photoluminescence conversion layer. According to the invention, gaN-based blue light and green light electroluminescence are integrated with red light photoluminescence technology, so that a red, green and blue three-primary-color Micro LED luminous unit is manufactured, the problem that GaN-based Lan Luguang LEDs and GaAs-based red light LED material systems are difficult to be compatible is solved, the thermal matching of the three primary colors of the device in operation is improved, the temperature drift of the three primary colors is reduced, the color consistency of the display in long-time operation is improved, and the reliability of the Micro LED display is improved. Meanwhile, as the traditional red light Micro LED chip adopts the GaAs substrate with a relatively brittle material, the yield is relatively low in the Micro LED manufacturing process, and the GaN material system with a relatively hard substrate material is used for exciting the luminescence conversion material to generate red light, the manufacturing process can be simplified, and the yield can be improved; the edge effect of the red light microchip is more serious than that of blue-green light, so that the efficiency of the red light Micro LED is extremely low, and the light-emitting efficiency of the red light can be improved by adopting a mode of exciting the conversion material to generate the red light by the blue light. In addition, the invention improves the efficiency of mass transfer in the Micro LED full-color display technology and reduces the complexity of manufacturing the terminal product through the integration of the red, green and blue three primary color unit pixels of the microchip level.
Further, the material of the red photoluminescent conversion layer of the present invention may be red phosphor, or red quantum dots, or a mixture of red phosphor and red quantum dots, but is not limited thereto.
Further, the width of the first blue light electroluminescent structure layer is 1-100 μm; the width of the second blue light electroluminescent structure layer is 1-100 mu m; the width of the green light electroluminescent structure layer is 1-100 mu m. The spectrum proportioning and distribution of the integrated light emitting chip can be controlled by respectively changing the respective sizes of the first blue light electroluminescent structure layer, the second blue light electroluminescent structure layer and the green light electroluminescent structure layer.
The invention further aims to provide a manufacturing method of the integrated light-emitting Micro LED chip.
Namely: firstly, sequentially epitaxially growing a buffer layer, an unintentionally doped GaN layer and an n-type doped GaN layer on the same side of a substrate; then further comprising the steps of:
1) Depositing an insulating medium mask layer on the n-type doped GaN layer for the first time, and etching the insulating medium mask layer to transversely and alternately etch a first blue light electroluminescent structure layer growth region and a second blue light electroluminescent structure layer growth region until the n-type doped GaN layer is exposed;
2) Simultaneously and sequentially epitaxially growing an InGaN/GaN blue light multi-quantum well active layer, an electron blocking layer and a p-type doped GaN layer in the first blue light electroluminescent structure layer growth region and the second blue light electroluminescent structure layer growth region;
3) Depositing an insulating medium mask layer on the surfaces of the reserved insulating medium mask layer, the p-type doped GaN layer of the first blue light electroluminescent structure layer and the p-type doped GaN layer of the second blue light electroluminescent structure layer for the second time, and etching to form a green light electroluminescent structure layer growth area in the insulating medium mask layer until the n-type doped GaN layer is exposed; the etched green light electroluminescent structure layer growth area is transversely spaced from the first blue light electroluminescent structure layer growth area or the second blue light electroluminescent structure layer growth area;
4) Sequentially epitaxially growing an InGaN/GaN green light multi-quantum well active layer, an electron blocking layer and a p-type doped GaN layer in the growth area of the green light electroluminescent structure layer;
5) Etching the insulating medium mask layer until the p-type doped GaN layer of the first blue light electroluminescent structure layer, the p-type doped GaN layer of the second blue light electroluminescent structure layer and the p-type doped GaN layer of the green light electroluminescent structure layer are exposed;
6) Respectively depositing transparent conductive layers on the p-type doped GaN layer of the first blue light electroluminescent structure layer, the p-type doped GaN layer of the second blue light electroluminescent structure layer and the p-type doped GaN layer of the green light electroluminescent structure layer;
7) Etching an N-type electrode manufacturing area in the insulating medium mask layer through etching until the N-type doped GaN layer is exposed;
8) P-type electrodes are respectively manufactured on the transparent conductive layer of the first blue light electroluminescent structure layer, the transparent conductive layer of the second blue light electroluminescent structure layer and the transparent conductive layer of the green light electroluminescent structure layer, and N-type electrodes are manufactured on the N-type doped GaN layer of the N-type electrode manufacturing area;
9) And manufacturing a red light photoluminescence conversion layer on the transparent conductive layer of the second blue light electroluminescence structure layer.
According to the invention, the first blue light electroluminescent structure layer, the second blue light electroluminescent structure layer and the green light electroluminescent structure layer are transversely etched at intervals by twice depositing the insulating medium mask layer, the corresponding luminous structure layer is manufactured in the etching area formed correspondingly, and then blue light emitted by the second blue light electroluminescent structure layer is converted into red light by the red light photoluminescence conversion layer. The effect that the GaN-based blue light and green light electroluminescence are integrated with the red light photoluminescence technology to manufacture the red, green and blue three-primary-color Micro LED luminous unit is achieved, and the red, green and blue three-primary-color luminous units are transversely deposited on the n-type doped GaN layer at intervals and are connected through the n-type doped GaN layer is achieved.
Further, the material of the insulating dielectric mask layer is any one of silicon oxide, silicon nitride, silicon oxynitride or aluminum oxide, but is not limited thereto. The insulating medium mask layer is used as an isolation layer.
In order to obtain the width of each corresponding light-emitting structure layer, the width of the etched growth area of the first blue light electroluminescent structure layer is 1-100 mu m; the width of the etched growth area of the second blue light electroluminescent structure layer is 1-100 mu m; the width of the etched green light electroluminescent structure layer growth area is 1-100 μm.
The beneficial effects of the invention are as follows: the GaN-based blue light, green light electroluminescence and red light photoluminescence technology are integrated to manufacture the red, green and blue three-primary-color Micro LED luminous unit, so that the problem that a GaN-based Lan Luguang LED and GaAs-based red light LED material system is difficult to be compatible is solved, the color consistency and reliability of a Micro LED display during long-time working are improved, meanwhile, the process is simplified, the yield is improved, and the integration of microchip-level red, green and blue three-primary-color unit pixels is adopted, so that the mass transfer efficiency in the Micro LED full-color display technology is improved, and the manufacturing complexity of a terminal product is reduced.
Drawings
Fig. 1 is a schematic structural view of the present invention.
Fig. 2 is a schematic structural diagram after the first blue electroluminescent structure layer and the second blue electroluminescent structure layer are grown.
Fig. 3 is a schematic diagram of the structure after the green electroluminescent structure layer has been grown.
Fig. 4 is a schematic structural diagram of the transparent conductive layer after being fabricated.
Fig. 5 is a schematic structural diagram of the P-type electrode and the N-type electrode after being manufactured.
Wherein, the main reference numerals are as follows:
10: a substrate;
20: a buffer layer;
30: unintentionally doping the GaN layer;
40: an n-type doped GaN layer;
50: an insulating medium mask layer;
61: a first blue light multiple quantum well active layer;
62: a first blue-ray electronic blocking layer;
63: a first blue light p-type doped GaN layer;
71: a second blue light multiple quantum well active layer;
72: a second blue-ray electronic blocking layer;
73: a second blue light p-type doped GaN layer;
81: a green light multi-quantum well active layer;
82: a green electron blocking layer;
83: a green light p-type doped GaN layer;
90: a transparent conductive layer;
101: a P-type electrode;
102: an N-type electrode;
110: red light photoluminescent conversion layer.
Detailed Description
1. The manufacturing steps are as follows:
1. a substrate 10 is provided which may be any of sapphire, silicon carbide, gallium nitride, but is not limited thereto.
2. In the MOCVD tool, a buffer layer 20, an unintentionally doped GaN layer 30, and an n-doped GaN layer 40 are epitaxially grown in sequence on a substrate 10 using conventional LED epitaxial growth techniques.
3. An insulating medium mask layer 50 is deposited on the n-type doped GaN layer 40 for the first time by a plasma enhanced chemical vapor deposition method, a first blue light electroluminescent structure layer and a second blue light electroluminescent structure layer region mask are manufactured on the surface of the insulating medium mask layer 50 by a photoetching mode, the width of the mask region is between 1 and 100 mu m, and a chemical corrosion or inductive coupling plasma etching method is adopted to etch the first blue light electroluminescent structure layer growing region and the second blue light electroluminescent structure layer growing region at intervals transversely, so that the n-type doped GaN layer 40 is exposed and is used for growing the first blue light electroluminescent structure layer and the second blue light electroluminescent structure layer.
4. In the MOCVD machine, inGaN/GaN blue multiple quantum well active layers 61 and 71, electron blocking layers 62 and 72, and p-type doped GaN layers 63 and 73 are simultaneously epitaxially grown in the first and second blue electroluminescent structure layer growth regions formed in step 3 in sequence using a conventional blue LED epitaxial growth technique, as shown in fig. 2.
5. And (3) depositing an insulating medium mask layer 50 on the epitaxial structure formed in the step (4) for the second time by a plasma enhanced chemical vapor deposition method, manufacturing a green light electroluminescent structure layer region mask on the surface of the insulating medium mask layer 50 by a photoetching mode, etching a green light electroluminescent structure layer growth region by a chemical etching or inductively coupled plasma etching method, and exposing an n-type doped GaN layer 40 for growing the green light electroluminescent structure layer, wherein the width of the mask region is 1-100 mu m. The etched green light electroluminescent structure layer growth area is transversely spaced from the first blue light electroluminescent structure layer growth area or the second blue light electroluminescent structure layer growth area.
6. In the MOCVD machine, the InGaN/GaN green light multiple quantum well active layer 81, the electron blocking layer 82 and the p-type doped GaN layer 83 are sequentially epitaxially grown in the green light electroluminescent structure layer growth region formed in the step 5 by adopting a conventional green light LED epitaxial growth technology, as shown in FIG. 3.
7. And (3) manufacturing a mask on the surface of the green light electroluminescent structure layer by a photoetching method, and etching a part of the insulating medium mask layer 50 on the surface of the structure formed in the step (6) by adopting a chemical etching or inductively coupled plasma etching method until the first blue light electroluminescent structure layer, the second blue light electroluminescent structure layer and the green light electroluminescent structure layer are exposed.
8. And (3) depositing a layer of transparent conductive film on the surface of the structure formed in the step (7) by an electron beam evaporation or magnetron sputtering method, manufacturing a mask on the surface by a photoetching mode, and reserving only the transparent conductive films on the surfaces of the first blue light electroluminescent structure layer, the second blue light electroluminescent structure layer and the green light electroluminescent structure layer by adopting a corrosion mode to form a transparent conductive layer 90, as shown in fig. 4.
9. And (3) manufacturing a mask on the surface of the structure formed in the step (8) by a photoetching method, and etching the insulating medium mask layer (50) on the surface to form an N-type electrode area by adopting a chemical etching or inductively coupled plasma etching method, so as to expose the N-type doped GaN layer (40) for manufacturing an N-type electrode.
10. And (3) manufacturing a mask on the surface of the structure formed in the step (9) by a photoetching method, depositing a metal layer on the surface by an electron beam evaporation method, removing metal in a mask area by adopting a stripping mode, respectively manufacturing a P-type electrode 101 on the transparent conductive layer 90 of the first blue light electroluminescence structure layer, the second blue light electroluminescence structure layer and the green light electroluminescence structure layer, and manufacturing an N-type electrode 102 on the N-type doped GaN layer 40 in an N-type electrode area, as shown in fig. 5.
11. A mask is fabricated on the surface of the structure formed in step 10 by photolithography, and a red photoluminescent conversion layer 110 is fabricated on the transparent conductive layer 90 of the second blue electroluminescent structure layer by coating or ink-jet printing, as shown in fig. 1.
The material of the red photoluminescence conversion layer 110 may be at least any one of red phosphor, red quantum dots, but is not limited thereto.
The insulating dielectric mask layer 50 is also used as an isolation layer in the above manufacturing process, and the material of the insulating dielectric mask layer 50 may be any one of silicon oxide, silicon nitride, silicon oxynitride, and aluminum oxide, but is not limited thereto.
2. The structural characteristics of the manufactured product are as follows:
As shown in fig. 1, the product structure includes, from bottom to top: the substrate 10, the buffer layer 20, the unintentionally doped GaN layer 30, the n-type doped GaN layer 40, and the first, second and green electroluminescent structure layers on the n-type doped GaN layer 40, and further includes a red photoluminescence conversion layer 110 on the transparent conductive layer 90 of the second blue electroluminescent structure layer.
The first blue electroluminescent structure layer, the second blue electroluminescent structure layer and the green electroluminescent structure layer are laterally deposited on top of the n-doped GaN layer 40 at intervals and are connected by the n-doped GaN layer 40.
The red photoluminescence conversion layer 110 is used for converting blue light emitted by the second blue electroluminescence structure layer into red light.
The first blue electroluminescent structure layer is composed of an InGaN/GaN blue multiple quantum well active layer 61, an electron blocking layer 62, a p-doped GaN layer 63, and a transparent conductive layer 90.
The second blue electroluminescent structure layer is composed of an InGaN/GaN blue multiple quantum well active layer 71, an electron blocking layer 72, a p-doped GaN layer 73, and a transparent conductive layer 90.
The green electroluminescent structure layer is composed of an InGaN/GaN green multi-quantum well active layer 81, an electron blocking layer 82, a p-doped GaN layer 83, and a transparent conductive layer 90.
In addition, the spectrum proportioning and the distribution of the integrated light emitting chip are controlled by changing the respective sizes of the first blue light electroluminescent structure layer, the second blue light electroluminescent structure layer and the green light electroluminescent structure layer. Thus, the widths of the first blue light electroluminescent structure layer, the second blue light electroluminescent structure layer and the green light electroluminescent structure layer in the product are 1-100 μm.
The above embodiments are only for illustrating but not limiting the technical solution, and any technical solution that does not deviate from the scope of the present invention should be covered in the protection scope of the present invention.
Claims (5)
1. The manufacturing method of the integrated luminous Micro LED chip comprises the following steps: sequentially epitaxially growing a buffer layer, an unintentionally doped GaN layer and an n-type doped GaN layer on the same side of the substrate; an N-type electrode, an insulating medium mask layer, a first blue light electroluminescent structure layer, a second blue light electroluminescent structure layer and a green light electroluminescent structure layer are respectively arranged on the N-type doped GaN layer, and P-type electrodes are respectively arranged on the surfaces of the first blue light electroluminescent structure layer, the second blue light electroluminescent structure layer and the green light electroluminescent structure layer; the method is characterized in that: the first blue light electroluminescent structure layer, the second blue light electroluminescent structure layer and the green light electroluminescent structure layer are transversely distributed among the insulating medium mask layers at intervals; the first blue light electroluminescent structure layer and the second blue light electroluminescent structure layer each comprise from bottom to top: an InGaN/GaN blue light multi-quantum well active layer, an electron blocking layer, a p-type doped GaN layer and a transparent conductive layer; the green light electroluminescent structure layer comprises the following components from bottom to top: an InGaN/GaN green light multi-quantum well active layer, an electron blocking layer, a p-type doped GaN layer and a transparent conductive layer; a red light photoluminescence conversion layer is arranged on the transparent conductive layer of the second blue light electroluminescence structure layer;
The manufacturing method comprises the following steps:
1) Depositing an insulating medium mask layer on the n-type doped GaN layer for the first time, and etching the insulating medium mask layer to transversely and alternately etch a first blue light electroluminescent structure layer growth region and a second blue light electroluminescent structure layer growth region until the n-type doped GaN layer is exposed;
2) Simultaneously and sequentially epitaxially growing an InGaN/GaN blue light multi-quantum well active layer, an electron blocking layer and a p-type doped GaN layer in the first blue light electroluminescent structure layer growth region and the second blue light electroluminescent structure layer growth region;
3) Depositing an insulating medium mask layer on the surfaces of the reserved insulating medium mask layer, the p-type doped GaN layer of the first blue light electroluminescent structure layer and the p-type doped GaN layer of the second blue light electroluminescent structure layer for the second time, and etching to form a green light electroluminescent structure layer growth area in the insulating medium mask layer until the n-type doped GaN layer is exposed;
The etched green light electroluminescent structure layer growth area is transversely spaced from the first blue light electroluminescent structure layer growth area or the second blue light electroluminescent structure layer growth area;
4) Sequentially epitaxially growing an InGaN/GaN green light multi-quantum well active layer, an electron blocking layer and a p-type doped GaN layer in the growth area of the green light electroluminescent structure layer;
5) Etching the insulating medium mask layer until the p-type doped GaN layer of the first blue light electroluminescent structure layer, the p-type doped GaN layer of the second blue light electroluminescent structure layer and the p-type doped GaN layer of the green light electroluminescent structure layer are exposed;
6) Respectively depositing transparent conductive layers on the p-type doped GaN layer of the first blue light electroluminescent structure layer, the p-type doped GaN layer of the second blue light electroluminescent structure layer and the p-type doped GaN layer of the green light electroluminescent structure layer;
7) Etching an N-type electrode manufacturing area in the insulating medium mask layer through etching until the N-type doped GaN layer is exposed;
8) P-type electrodes are respectively manufactured on the transparent conductive layer of the first blue light electroluminescent structure layer, the transparent conductive layer of the second blue light electroluminescent structure layer and the transparent conductive layer of the green light electroluminescent structure layer, and N-type electrodes are manufactured on the N-type doped GaN layer of the N-type electrode manufacturing area;
9) And manufacturing a red light photoluminescence conversion layer on the transparent conductive layer of the second blue light electroluminescence structure layer.
2. The method for manufacturing the integrated light-emitting Micro LED chip according to claim 1, wherein: the insulating medium mask layer is made of any one of silicon oxide, silicon nitride, silicon oxynitride or aluminum oxide.
3. The method for manufacturing the integrated light-emitting Micro LED chip according to claim 1 or 2, wherein: the width of the etched growth area of the first blue light electroluminescent structure layer is 1-100 mu m.
4. The method for manufacturing the integrated light-emitting Micro LED chip according to claim 1 or 2, wherein: the width of the etched growth area of the second blue light electroluminescent structure layer is 1-100 mu m.
5. The method for manufacturing the integrated light-emitting Micro LED chip according to claim 1 or 2, wherein: the width of the etched green light electroluminescent structure layer growth area is 1-100 μm.
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| CN201910866086.9A CN110534542B (en) | 2019-09-09 | 2019-09-09 | Integrated light-emitting Micro LED chip and manufacturing method thereof |
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| CN201910866086.9A CN110534542B (en) | 2019-09-09 | 2019-09-09 | Integrated light-emitting Micro LED chip and manufacturing method thereof |
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| CN112331747A (en) * | 2020-11-17 | 2021-02-05 | 厦门大学 | Full-color Micro/Nano LED array direct epitaxy method and structure |
| CN112420885A (en) * | 2020-12-08 | 2021-02-26 | 福建兆元光电有限公司 | Integrated Micro LED chip and manufacturing method thereof |
| CN112510029B (en) * | 2020-12-25 | 2022-08-09 | 惠州学院 | RGB-LED chip and manufacturing method and application thereof |
| CN113328014A (en) * | 2021-05-27 | 2021-08-31 | 复旦大学 | micro-LED display device and preparation method thereof |
| CN116845147A (en) * | 2021-08-13 | 2023-10-03 | 福建兆元光电有限公司 | Manufacturing method of red light LED based on GaN-based epitaxy |
| TWI769065B (en) * | 2021-08-24 | 2022-06-21 | 友達光電股份有限公司 | Display device and manufacturing method thereof |
| CN117296156A (en) * | 2022-04-25 | 2023-12-26 | 京东方科技集团股份有限公司 | Light-emitting diode chip, preparation method thereof and display device |
| CN115954421A (en) * | 2022-10-08 | 2023-04-11 | 王晓靁 | Micro light-emitting diode with dielectric frame and preparation method thereof |
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