CN210092086U

CN210092086U - Semiconductor light emitting device

Info

Publication number: CN210092086U
Application number: CN201921358732.2U
Authority: CN
Inventors: 戴俊; 李志聪; 王国宏
Original assignee: YANGZHOU ZHONGKE SEMICONDUCTOR LIGHTING CO Ltd
Current assignee: YANGZHOU ZHONGKE SEMICONDUCTOR LIGHTING CO Ltd
Priority date: 2019-08-21
Filing date: 2019-08-21
Publication date: 2020-02-18
Anticipated expiration: 2029-08-21

Abstract

A semiconductor light emitting device belongs to the technical field of semiconductor photoelectricity, and is characterized in that a buffer layer, an unintended doped GaN layer and an n-type doped GaN layer are sequentially arranged on a substrate, an n-type electrode, an insulating medium mask layer, a blue light LED light emitting structure layer, a green light LED light emitting structure layer and a red light OLED light emitting structure layer are respectively arranged on the n-type doped GaN layer, and p-type electrodes are respectively arranged on the surfaces of the blue light LED light emitting structure layer, the green light LED light emitting structure layer and the red light OLED light emitting structure layer; the blue light LED light emitting structure layer, the green light LED light emitting structure layer and the red light OLED light emitting structure layer are distributed among the insulating medium mask layers at intervals. The utility model discloses improve gaN base blue-green light LED and the difficult compatible problem of GaAs base ruddiness LED material system, improved the efficiency that the huge amount shifted in the full-color display technology of Micro LED, reduced the complexity of terminal product preparation.

Description

Semiconductor light emitting device

Technical Field

The utility model belongs to the technical field of the semiconductor photoelectricity, especially semiconductor light emitting device's production technology.

Background

Micro LEDs have a wide market prospect as a next generation display technology and are widely concerned in the industry. Because Micro LED full-color display needs to integrate a high-density Micro-sized red, green and blue three-primary-color LED chip array on one screen, the fractional mass transfer technology of the red, green and blue three-primary-color LED chips becomes a main technical bottleneck restricting the development of the chip. If the red, green and blue three-primary-color LED chips can be manufactured into the integrated light-emitting unit at the chip level, the efficiency of mass transfer can be improved, and the complexity of manufacturing the terminal product is reduced. For red, green and blue three-primary-color LED chips, blue and green LEDs are generally completed by extending InGaN materials on a sapphire substrate, and red LEDs are completed by extending AlInGaP materials on a gallium arsenide substrate.

On the other hand, since the OLED is mainly an organic polymer material, and the blue light wavelength is short, the energy is relatively high, the organic material is easy to decay, so that the blue OLED material has poor stability and short service life. The blue lifetime problem is a short plate that cannot be avoided and becomes a bottleneck in OLED technology.

SUMMERY OF THE UTILITY MODEL

The utility model aims at providing a simple structure, the convenient semiconductor luminescent device who produces has red, green, blue three primary colors micro LED luminescence unit.

The utility model adopts the technical scheme that: sequentially arranging a buffer layer, an unintended doped GaN layer and an n-type doped GaN layer on a substrate, respectively arranging an n-type electrode, an insulating medium mask layer, a blue light LED light emitting structure layer, a green light LED light emitting structure layer and a red light OLED light emitting structure layer on the n-type doped GaN layer, and respectively arranging p-type electrodes on the surfaces of the blue light LED light emitting structure layer, the green light LED light emitting structure layer and the red light OLED light emitting structure layer; is characterized in that: the blue light LED light emitting structure layer, the green light LED light emitting structure layer and the red light OLED light emitting structure layer are distributed among the insulating medium mask layers at intervals; blue light LED light emitting structure layer includes from bottom to top: the InGaN/GaN blue light multi-quantum well active layer, the electron blocking layer, the p-type doped GaN layer and the transparent conducting layer are formed; the green light LED light-emitting structure layer comprises from bottom to top: the InGaN/GaN green light multi-quantum well active layer, the electron blocking layer, the p-type doped GaN layer and the transparent conducting layer are formed; the red light OLED light emitting structure layer comprises from bottom to top: the organic electroluminescent device comprises a first transparent conductive layer, an electron transport layer, a red light organic luminescent layer, a hole transport layer and a second transparent conductive layer.

The blue light LED light-emitting structure layer, the green light LED light-emitting structure layer and the red light OLED light-emitting structure layer are transversely deposited on the n-type doped GaN layer through the simple structure, the n-type doped GaN layer is connected, the inorganic GaN-based blue light LED and the green light LED are integrated with the organic red light OLED technology to manufacture the red, green and blue three-primary-color Micro LED light-emitting unit, the respective luminous performance advantages of the inorganic GaN-based LED and the organic OLED are fully utilized, the problem that the GaN-based blue-green light LED and the GaAs-based red light LED material system are difficult to be compatible is solved, the huge transfer efficiency in the Micro LED full-color display technology is improved through the integration of chip-level red, green and blue three-primary-color unit pixels, and the manufacturing complexity of terminal products is reduced.

Further, the width of the blue light LED light-emitting structure layer is 1-100 mu m; the width of the green light LED light-emitting structure layer is 1-100 mu m; the width of the red OLED light emitting structure layer is 1-100 mu m. The spectral proportion and distribution of the semiconductor light-emitting device can be controlled by changing the respective widths of the blue light LED light-emitting structure layer, the green light LED light-emitting structure layer and the red light OLED light-emitting structure layer.

Drawings

Fig. 1 is a schematic structural diagram of a semiconductor light emitting device according to the present invention.

Fig. 2 is a schematic structural diagram of the blue LED light emitting structure layer after growth.

FIG. 3 is a schematic structural diagram of a green LED light-emitting structure layer after growth.

FIG. 4 is a schematic structural diagram of the red OLED after the deposition of the light emitting structure layer.

Fig. 5 is a schematic structural diagram after the transparent conductive layer is manufactured.

Wherein the main reference numerals are as follows:

10: a substrate;

20: a buffer layer;

30: unintentionally doping the GaN layer;

40: an n-type doped GaN layer;

50: an insulating medium mask layer;

61: a blue light multiple quantum well active layer;

62: a blue electron blocking layer;

63: a blue light p-type doped GaN layer;

71: a green light multiple quantum well active layer;

72: a green electron blocking layer;

73: a green light p-type doped GaN layer;

81: an electron transport layer;

82: a red organic light emitting layer;

83: a hole transport layer;

90: a transparent conductive layer;

101: a p-type electrode;

102: an n-type electrode.

Detailed Description

Firstly, the manufacturing steps are as follows:

1. a substrate 10 is provided, which may be any one of sapphire, silicon carbide, gallium nitride, but is not limited thereto.

2. In an MOCVD machine, a buffer layer 20, an unintentionally doped GaN layer 30 and an n-type doped GaN layer 40 are epitaxially grown on a substrate 10 in sequence by using a conventional LED epitaxial growth technology.

3. The method comprises the steps of depositing an insulating medium mask layer 50 on an n-type doped GaN layer 40 for the first time through a plasma enhanced chemical vapor deposition method, manufacturing a blue LED area mask on the surface of the insulating medium mask layer 50 through a photoetching method, wherein the width of the mask area is 1-100 mu m, etching a blue LED light-emitting structure layer growth area through a chemical corrosion or inductive coupling plasma etching method, and exposing the n-type doped GaN layer 40 for growing the blue LED light-emitting structure layer.

4. In an MOCVD machine, adopting a conventional blue light LED epitaxial growth technology, sequentially epitaxially growing an InGaN/GaN blue light multiple quantum well active layer 61, an electron blocking layer 62 and a p-type doped GaN layer 63 in the growth region of the blue light LED light emitting structure layer formed in the step 3, as shown in fig. 2.

5. Depositing an insulating medium mask layer 50 on the epitaxial structure formed in the step 4 for the second time by a plasma enhanced chemical vapor deposition method, manufacturing a green light LED area mask on the surface of the insulating medium mask layer 50 in a photoetching mode, wherein the width of the mask area is 1-100 mu m, etching a green light LED light-emitting structure layer growth area by adopting a chemical corrosion or inductive coupling plasma etching method, and exposing the n-type doped GaN layer 40 for growing the green light LED light-emitting structure layer.

6. In an MOCVD machine, adopting a conventional green light LED epitaxial growth technology, sequentially epitaxially growing an InGaN/GaN green light multiple quantum well active layer 71, an electron blocking layer 72 and a p-type doped GaN layer 73 in the growth region of the green light LED light emitting structure layer formed in the step 5, as shown in FIG. 3.

7. Depositing an insulating medium mask layer 50 on the epitaxial structure formed in the step 6 for the third time by a plasma enhanced chemical vapor deposition method, then manufacturing a red OLED area mask on the surface of the insulating medium mask layer 50 in a photoetching mode, wherein the width of the mask area is 1-100 mu m, etching a red OLED light-emitting structure layer growth area by adopting a chemical corrosion or inductive coupling plasma etching method, and exposing the n-type doped GaN layer 40 for depositing the red OLED light-emitting structure layer.

8. Depositing a transparent conducting layer 90 in the growth region of the red light OLED light emitting structure layer formed in the step 7 by an electron beam evaporation or magnetron sputtering method, and then sequentially depositing an electron transport layer 81, a red light organic light emitting layer 82 and a hole transport layer 83 on the transparent conducting layer 90 by a vacuum thermal evaporation method and by adopting a conventional red light OLED film forming technology, as shown in FIG. 4.

9. And (3) manufacturing a mask on the surface of the red OLED light-emitting structure layer by a photoetching method, and etching a part of the insulating medium mask layer 50 on the surface of the structure formed in the step (8) by adopting a chemical corrosion or induction coupling plasma etching method until the blue LED light-emitting structure layer, the green LED light-emitting structure layer and the red OLED light-emitting structure layer are exposed.

10. Depositing a layer of transparent conductive film on the surface of the structure formed in step 9 by using an electron beam evaporation or magnetron sputtering method, then manufacturing a mask on the surface by using a photoetching method, and only keeping the transparent conductive films on the surfaces of the blue light LED light-emitting structure layer, the green light LED light-emitting structure layer and the red light OLED light-emitting structure layer by using a corrosion method to form a transparent conductive layer 90, as shown in FIG. 5.

11. A mask is made on the surface of the structure formed in the step 10 by a photoetching method, and an n-type electrode region is etched on the insulating medium mask layer 50 on the surface by a chemical etching or inductively coupled plasma etching method, so that the n-type doped GaN layer 40 is exposed for making an n-type electrode.

12. By means of photolithography, a mask is formed on the surface of the structure formed in step 11, a metal layer is deposited on the surface by means of electron beam evaporation, and the metal in the mask region is removed by stripping, so that p-type electrodes 101 are respectively formed on the transparent conductive layers 90 of the blue LED light emitting structure layer, the green LED light emitting structure layer, and the red OLED light emitting structure layer, and n-type electrodes 102 are formed on the n-type doped GaN layer 40 in the n-type electrode region, as shown in fig. 1.

In the above manufacturing process, the insulating dielectric mask layer 50 also serves as an isolation layer, and the material of the insulating dielectric mask layer 50 may be any one of silicon oxide, silicon nitride, silicon oxynitride, and aluminum oxide, but is not limited thereto.

Secondly, the structure characteristics of the manufactured product are as follows:

as shown in fig. 1, the product structure comprises, from bottom to top: the LED light-emitting structure comprises a substrate 10, a buffer layer 20, an unintentional doped GaN layer 30, an n-type doped GaN layer 40, and a blue LED light-emitting structure layer, a green LED light-emitting structure layer and a red OLED light-emitting structure layer which are positioned on the n-type doped GaN layer 40.

The blue light LED light emitting structure layer, the green light LED light emitting structure layer and the red light OLED light emitting structure layer are respectively and transversely deposited on the n-type doped GaN layer 40 and are connected through the n-type doped GaN layer 40.

The blue LED light emitting structure layer is composed of an InGaN/GaN blue light multi-quantum well active layer 61, an electron blocking layer 62, a p-type doped GaN layer 63 and a transparent conducting layer 90.

The green light LED light-emitting structure layer consists of: the InGaN/GaN green light multi-quantum well active layer 71, the electron blocking layer 72, the p-type doped GaN layer 73 and the transparent conducting layer 90.

The red OLED light emitting structure layer is composed of a first transparent conductive layer 90, an electron transport layer 81, a red organic light emitting layer 82, a hole transport layer 83 and a second transparent conductive layer 90.

In addition, the spectral proportion and distribution of the semiconductor light-emitting device are controlled by changing the width of each of the blue light LED light-emitting structure layer, the green light LED light-emitting structure layer and the red OLED light-emitting structure layer. Therefore, the width of the blue light LED light emitting structure layer, the green light LED light emitting structure layer and the red light OLED light emitting structure layer in the product is 1-100 mu m.

Claims

1. A semiconductor light-emitting device is characterized in that a buffer layer, an unintended doped GaN layer and an n-type doped GaN layer are sequentially arranged on a substrate, an n-type electrode, an insulating medium mask layer, a blue light LED light-emitting structure layer, a green light LED light-emitting structure layer and a red light OLED light-emitting structure layer are respectively arranged on the n-type doped GaN layer, and p-type electrodes are respectively arranged on the surfaces of the blue light LED light-emitting structure layer, the green light LED light-emitting structure layer and the red light OLED light-emitting structure layer; the method is characterized in that: the blue light LED light emitting structure layer, the green light LED light emitting structure layer and the red light OLED light emitting structure layer are distributed among the insulating medium mask layers at intervals; blue light LED light emitting structure layer includes from bottom to top: the InGaN/GaN blue light multi-quantum well active layer, the electron blocking layer, the p-type doped GaN layer and the transparent conducting layer are formed; the green light LED light-emitting structure layer comprises from bottom to top: the InGaN/GaN green light multi-quantum well active layer, the electron blocking layer, the p-type doped GaN layer and the transparent conducting layer are formed; the red light OLED light emitting structure layer comprises from bottom to top: the organic electroluminescent device comprises a first transparent conductive layer, an electron transport layer, a red light organic luminescent layer, a hole transport layer and a second transparent conductive layer.

2. The semiconductor light emitting device of claim 1, wherein: the width of the blue light LED light-emitting structure layer is 1-100 mu m.

3. The semiconductor light emitting device of claim 1, wherein: the width of the green light LED light-emitting structure layer is 1-100 mu m.

4. The semiconductor light emitting device of claim 1, wherein: the width of the red OLED light emitting structure layer is 1-100 mu m.