JPS5384561A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS5384561A JPS5384561A JP16029476A JP16029476A JPS5384561A JP S5384561 A JPS5384561 A JP S5384561A JP 16029476 A JP16029476 A JP 16029476A JP 16029476 A JP16029476 A JP 16029476A JP S5384561 A JPS5384561 A JP S5384561A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- developing
- substrate
- high temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To manufacture uniform Si3N4 on the Si substrate, by developing the N atom activated through high temperature heating of N2H4.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16029476A JPS5384561A (en) | 1976-12-29 | 1976-12-29 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16029476A JPS5384561A (en) | 1976-12-29 | 1976-12-29 | Manufacture for semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5384561A true JPS5384561A (en) | 1978-07-26 |
JPS5610784B2 JPS5610784B2 (en) | 1981-03-10 |
Family
ID=15711854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16029476A Granted JPS5384561A (en) | 1976-12-29 | 1976-12-29 | Manufacture for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5384561A (en) |
-
1976
- 1976-12-29 JP JP16029476A patent/JPS5384561A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5610784B2 (en) | 1981-03-10 |
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