Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
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Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co LtdfiledCriticalNEC Corp
Priority to JP15369276ApriorityCriticalpatent/JPS5377180A/en
Publication of JPS5377180ApublicationCriticalpatent/JPS5377180A/en
PURPOSE: To form Si recrystallined layers containing Al by the degree of solid solubility by selecting forming Al films on a Si substrate, and moving Al-Si melt regions by making specified temperature gradients on the front and back of the substrates and performing heat treatment.
COPYRIGHT: (C)1978,JPO&Japio
JP15369276A1976-12-201976-12-20Semiconductor device and its production
PendingJPS5377180A
(en)