JPS51118393A - Semicondector unit - Google Patents
Semicondector unitInfo
- Publication number
- JPS51118393A JPS51118393A JP4397475A JP4397475A JPS51118393A JP S51118393 A JPS51118393 A JP S51118393A JP 4397475 A JP4397475 A JP 4397475A JP 4397475 A JP4397475 A JP 4397475A JP S51118393 A JPS51118393 A JP S51118393A
- Authority
- JP
- Japan
- Prior art keywords
- semicondector
- unit
- oxydized
- film
- protect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To protect from cutting and short in multi layer wiring by utilizing heat oxydized film of poly silicon and low temperature oxydized film.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4397475A JPS51118393A (en) | 1975-04-10 | 1975-04-10 | Semicondector unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4397475A JPS51118393A (en) | 1975-04-10 | 1975-04-10 | Semicondector unit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51118393A true JPS51118393A (en) | 1976-10-18 |
Family
ID=12678678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4397475A Pending JPS51118393A (en) | 1975-04-10 | 1975-04-10 | Semicondector unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51118393A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62290180A (en) * | 1977-01-26 | 1987-12-17 | モステツク・コ−ポレイシヨン | Manufacture of semiconductor device |
JPH02312244A (en) * | 1989-05-26 | 1990-12-27 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPH0590289A (en) * | 1991-09-30 | 1993-04-09 | Semiconductor Energy Lab Co Ltd | Semiconductor integrated circuit and manufacture thereof |
JPH0590292A (en) * | 1991-09-30 | 1993-04-09 | Semiconductor Energy Lab Co Ltd | Semiconductor integrated circuit and manufacture thereof |
US5668028A (en) * | 1993-11-30 | 1997-09-16 | Sgs-Thomson Microelectronics, Inc. | Method of depositing thin nitride layer on gate oxide dielectric |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS48102983A (en) * | 1972-04-06 | 1973-12-24 | ||
JPS49116987A (en) * | 1972-06-01 | 1974-11-08 |
-
1975
- 1975-04-10 JP JP4397475A patent/JPS51118393A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS48102983A (en) * | 1972-04-06 | 1973-12-24 | ||
JPS49116987A (en) * | 1972-06-01 | 1974-11-08 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62290180A (en) * | 1977-01-26 | 1987-12-17 | モステツク・コ−ポレイシヨン | Manufacture of semiconductor device |
JPH098299A (en) * | 1977-01-26 | 1997-01-10 | Sgs Thomson Microelectron Inc | Semiconductor device and manufacture thereof |
JPH0918003A (en) * | 1977-01-26 | 1997-01-17 | Sgs Thomson Microelectron Inc | Manufacture of field effect transistor |
JPH02312244A (en) * | 1989-05-26 | 1990-12-27 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPH0590289A (en) * | 1991-09-30 | 1993-04-09 | Semiconductor Energy Lab Co Ltd | Semiconductor integrated circuit and manufacture thereof |
JPH0590292A (en) * | 1991-09-30 | 1993-04-09 | Semiconductor Energy Lab Co Ltd | Semiconductor integrated circuit and manufacture thereof |
US5668028A (en) * | 1993-11-30 | 1997-09-16 | Sgs-Thomson Microelectronics, Inc. | Method of depositing thin nitride layer on gate oxide dielectric |
US5710453A (en) * | 1993-11-30 | 1998-01-20 | Sgs-Thomson Microelectronics, Inc. | Transistor structure and method for making same |
US6780718B2 (en) | 1993-11-30 | 2004-08-24 | Stmicroelectronics, Inc. | Transistor structure and method for making same |
US7459758B2 (en) | 1993-11-30 | 2008-12-02 | Stmicroelectronics, Inc. | Transistor structure and method for making same |
US7704841B2 (en) | 1993-11-30 | 2010-04-27 | Stmicroelectronics, Inc. | Transistor structure and method for making same |
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