JPS53135291A - Production of semiconductor substance - Google Patents

Production of semiconductor substance

Info

Publication number
JPS53135291A
JPS53135291A JP5020877A JP5020877A JPS53135291A JP S53135291 A JPS53135291 A JP S53135291A JP 5020877 A JP5020877 A JP 5020877A JP 5020877 A JP5020877 A JP 5020877A JP S53135291 A JPS53135291 A JP S53135291A
Authority
JP
Japan
Prior art keywords
production
separating
semiconductor substance
area
layer above
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5020877A
Other languages
Japanese (ja)
Other versions
JPS584818B2 (en
Inventor
Kazutoshi Nagano
Hiroyasu Karimoto
Tatsunori Nakajima
Kosei Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5020877A priority Critical patent/JPS584818B2/en
Publication of JPS53135291A publication Critical patent/JPS53135291A/en
Publication of JPS584818B2 publication Critical patent/JPS584818B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)

Abstract

PURPOSE: To make a device high-density with preventing the generation of branchshaped reaction holes from separating areas, by providing an impurity diffusion layer on the substrate surface surrounding the area, where the separating area will be formed, and forming the separating area inside the substrate surrounded by the layer above after making the layer above porous.
COPYRIGHT: (C)1978,JPO&Japio
JP5020877A 1977-04-30 1977-04-30 Method for manufacturing semiconductor substrate Expired JPS584818B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5020877A JPS584818B2 (en) 1977-04-30 1977-04-30 Method for manufacturing semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5020877A JPS584818B2 (en) 1977-04-30 1977-04-30 Method for manufacturing semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS53135291A true JPS53135291A (en) 1978-11-25
JPS584818B2 JPS584818B2 (en) 1983-01-27

Family

ID=12852676

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5020877A Expired JPS584818B2 (en) 1977-04-30 1977-04-30 Method for manufacturing semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS584818B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0501119A2 (en) * 1991-01-16 1992-09-02 Canon Kabushiki Kaisha Method of producing semiconductor substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0501119A2 (en) * 1991-01-16 1992-09-02 Canon Kabushiki Kaisha Method of producing semiconductor substrate
EP0501119A3 (en) * 1991-01-16 1995-03-01 Canon Kk

Also Published As

Publication number Publication date
JPS584818B2 (en) 1983-01-27

Similar Documents

Publication Publication Date Title
JPS54589A (en) Burying method of insulator
JPS5389374A (en) Production of semiconductor device
JPS53135291A (en) Production of semiconductor substance
JPS5422171A (en) Manufacture of semiconductor device
JPS5249781A (en) Process for production of semiconductor device
JPS5329086A (en) Production of semiconductor device
JPS5376752A (en) Production of semionductor device
JPS53116787A (en) Production of semiconductor device
JPS53139476A (en) Manufacture of semiconductor device
JPS53136958A (en) Selective impurity diffusion method into semiconductor substrate
JPS5287373A (en) Production of semiconductor device
JPS51112266A (en) Semiconductor device production method
JPS547867A (en) Manufacture for semiconductor device
JPS5431274A (en) Manufacture of semiconductor device
JPS53135266A (en) Production of semiconductor device
JPS5246765A (en) Method of producing semiconductor device
JPS52149987A (en) Production of semiconductor device
JPS5384554A (en) Manufacture for semiconductor device
JPS5267962A (en) Manufacture of semiconductor unit
JPS546775A (en) Semiconductor device featuring stepped electrode structure
JPS5421182A (en) Manufacture for semiconductor device
JPS5425160A (en) Manufacture of semiconductor device
JPS538058A (en) Production of semiconductor device
JPS5361980A (en) Production of semiconductor device
JPS53133380A (en) Manufacture of semiconductor element