JPS566434A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS566434A
JPS566434A JP8192279A JP8192279A JPS566434A JP S566434 A JPS566434 A JP S566434A JP 8192279 A JP8192279 A JP 8192279A JP 8192279 A JP8192279 A JP 8192279A JP S566434 A JPS566434 A JP S566434A
Authority
JP
Japan
Prior art keywords
metal thin
thin film
film layer
silicone
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8192279A
Other languages
Japanese (ja)
Inventor
Yoshio Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP8192279A priority Critical patent/JPS566434A/en
Publication of JPS566434A publication Critical patent/JPS566434A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To improve the adhesivity and the junction property between a metal thin film layer and a semiconductor substate by quick heat treatment with radiant rays such as laser and electron beams after the metal thin film layer for the electrode and wiring is formed on the semiconductor substrate. CONSTITUTION:The silicone oxide film 2 grows on the surface of the silicone substrate 1. Then, the silicone oxide film is etched in the portions requiring junction between the silicone substrate 1 and the metal thin film layer and the metal thin film made of aluminum or the like thereon. Thereafter, the electrode and the wiring pattern are formed by the normal photoetching process. A quick heat treatment is performed with laser beam and electron beam so that the energy density reaches about 0.5-0.8J/cm<2>. This prevents reaction between the metal thin film and the insulating film because of short heat treatment thereby assuring stable junction property between the metal thin film layer 4 and the silicone substrate 1.
JP8192279A 1979-06-28 1979-06-28 Manufacture of semiconductor device Pending JPS566434A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8192279A JPS566434A (en) 1979-06-28 1979-06-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8192279A JPS566434A (en) 1979-06-28 1979-06-28 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS566434A true JPS566434A (en) 1981-01-23

Family

ID=13759943

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8192279A Pending JPS566434A (en) 1979-06-28 1979-06-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS566434A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62211915A (en) * 1986-03-12 1987-09-17 Nec Corp Method for deposition of conductive thin film
JPS63244755A (en) * 1987-03-31 1988-10-12 Fujitsu Ltd Formation of conductive layer
US7554055B2 (en) 2005-05-03 2009-06-30 Hitachi Global Storage Technologies Netherlands B.V. Method for making ohmic contact to silicon structures with low thermal loads

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52146559A (en) * 1976-05-31 1977-12-06 Nippon Telegr & Teleph Corp <Ntt> Electrode forming method
JPS5563819A (en) * 1978-11-06 1980-05-14 Nec Corp Manufacture of semiconductor device
JPS5578566A (en) * 1978-12-11 1980-06-13 Toshiba Corp Manufacture of semiconductor device
JPS55111128A (en) * 1979-02-20 1980-08-27 Nec Corp Manufacturing method of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52146559A (en) * 1976-05-31 1977-12-06 Nippon Telegr & Teleph Corp <Ntt> Electrode forming method
JPS5563819A (en) * 1978-11-06 1980-05-14 Nec Corp Manufacture of semiconductor device
JPS5578566A (en) * 1978-12-11 1980-06-13 Toshiba Corp Manufacture of semiconductor device
JPS55111128A (en) * 1979-02-20 1980-08-27 Nec Corp Manufacturing method of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62211915A (en) * 1986-03-12 1987-09-17 Nec Corp Method for deposition of conductive thin film
JPS63244755A (en) * 1987-03-31 1988-10-12 Fujitsu Ltd Formation of conductive layer
US7554055B2 (en) 2005-05-03 2009-06-30 Hitachi Global Storage Technologies Netherlands B.V. Method for making ohmic contact to silicon structures with low thermal loads

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