JPS56130924A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56130924A
JPS56130924A JP3380980A JP3380980A JPS56130924A JP S56130924 A JPS56130924 A JP S56130924A JP 3380980 A JP3380980 A JP 3380980A JP 3380980 A JP3380980 A JP 3380980A JP S56130924 A JPS56130924 A JP S56130924A
Authority
JP
Japan
Prior art keywords
high energy
emitted
film
sio2
energy beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3380980A
Other languages
Japanese (ja)
Inventor
Haruhide Fuse
Koichi Kugimiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3380980A priority Critical patent/JPS56130924A/en
Publication of JPS56130924A publication Critical patent/JPS56130924A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To remove selectively an insulating film with HF-base liquid or plasma etching without using a resist after remitting a high energy beam via an insulated film accmulated on a semiconductor substrate to a predetermined pattern. CONSTITUTION:An SiO2 layer is accumulated via a CVD or the like on a semiconductor substrate 1, a high energy beam such as a laser beam or an electron beam or the like is emitted to a predetermined pattern to form the SiO2 film densely, and the SiO2 film of the region 4 not emitted with the high energy beam is removed by an HF-base etching or a plasma etching process. Thus, an opening of a desired pattern can be formed without using a resist by utilizing the difference of an etching rate of the SiO2 film due to the existence or absence of the emitted high energy.
JP3380980A 1980-03-17 1980-03-17 Manufacture of semiconductor device Pending JPS56130924A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3380980A JPS56130924A (en) 1980-03-17 1980-03-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3380980A JPS56130924A (en) 1980-03-17 1980-03-17 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56130924A true JPS56130924A (en) 1981-10-14

Family

ID=12396798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3380980A Pending JPS56130924A (en) 1980-03-17 1980-03-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56130924A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60109074A (en) * 1983-11-18 1985-06-14 Nec Corp Magnetic head slider and its manufacture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60109074A (en) * 1983-11-18 1985-06-14 Nec Corp Magnetic head slider and its manufacture

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