JPS5432976A - Hard mask for electron beam - Google Patents

Hard mask for electron beam

Info

Publication number
JPS5432976A
JPS5432976A JP9975277A JP9975277A JPS5432976A JP S5432976 A JPS5432976 A JP S5432976A JP 9975277 A JP9975277 A JP 9975277A JP 9975277 A JP9975277 A JP 9975277A JP S5432976 A JPS5432976 A JP S5432976A
Authority
JP
Japan
Prior art keywords
electron beam
hard mask
etching
layer
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9975277A
Other languages
Japanese (ja)
Other versions
JPS5419749B2 (en
Inventor
Tadao Kato
Toshihiko Yatsuhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9975277A priority Critical patent/JPS5432976A/en
Publication of JPS5432976A publication Critical patent/JPS5432976A/en
Publication of JPS5419749B2 publication Critical patent/JPS5419749B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)

Abstract

PURPOSE: To form a mask by stacking a multi-layer conductive layer, which can be selective etched, on a glass substrate, by making an upper-layer pattern into an etching-proof mask through a size measurement immediately after the formation, and by etching the lower-layer pattern.
COPYRIGHT: (C)1979,JPO&Japio
JP9975277A 1977-08-19 1977-08-19 Hard mask for electron beam Granted JPS5432976A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9975277A JPS5432976A (en) 1977-08-19 1977-08-19 Hard mask for electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9975277A JPS5432976A (en) 1977-08-19 1977-08-19 Hard mask for electron beam

Publications (2)

Publication Number Publication Date
JPS5432976A true JPS5432976A (en) 1979-03-10
JPS5419749B2 JPS5419749B2 (en) 1979-07-17

Family

ID=14255714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9975277A Granted JPS5432976A (en) 1977-08-19 1977-08-19 Hard mask for electron beam

Country Status (1)

Country Link
JP (1) JPS5432976A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0354741U (en) * 1989-09-19 1991-05-27
JPH03132662A (en) * 1989-10-18 1991-06-06 Mitsubishi Electric Corp Photomask material and photomask correcting method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1622386A1 (en) * 1967-11-28 1970-12-23 Telefunken Patent Method of making a photomask

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1622386A1 (en) * 1967-11-28 1970-12-23 Telefunken Patent Method of making a photomask

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0354741U (en) * 1989-09-19 1991-05-27
JPH03132662A (en) * 1989-10-18 1991-06-06 Mitsubishi Electric Corp Photomask material and photomask correcting method

Also Published As

Publication number Publication date
JPS5419749B2 (en) 1979-07-17

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